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Dimitrios Koumoulis

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2015arXiv

A combined NMR and DFT study of Narrow Gap Semiconductors: The case of PbTe

In this study we present an alternative approach to separating contributions to the NMR shift originating from the Knight shift and chemical shielding by a combination of experimental solid-state NMR results and ab initio calculations. The chemical and Knight shifts are normally distinguished through detailed studies of the resonance frequency as function of temperature and carrier concentration, followed by extrapolation of the shift to zero carrier concentration. This approach is time-consuming and requires studies of multiple samples. Here, we analyzed $^{207}$ Pb and $^{125}$ Te NMR spin-lattice relaxation rates and NMR shifts for bulk and nanoscale PbTe. The shifts are compared with calculations of the $^{207}$ Pb and $^{125}$ Te chemical shift resonances to determine the chemical shift at zero charge carrier concentration. The results are in good agreement with literature values from carrier concentration-dependent studies. The measurements are also compared to literature reports of the $^{207}$ Pb and $^{125}$ Te Knight shifts of $n$ - and $p$ -type PbTe semiconductors. The literature data have been converted to the currently accepted shift scale. We also provide possible evidence for the "self-cleaning effect" property of PbTe nanocrystals whereby defects are removed from the core of the particles, while preserving the crystal structure.

preprint2015arXiv

Nanoscale $β$ -Nuclear Magnetic Resonance Depth Imaging of Topological Insulators

Considerable evidence suggests that variations in the properties of topological insulators (TIs) at the nanoscale and at interfaces can strongly affect the physics of topological materials. Therefore, a detailed understanding of surface states and interface coupling is crucial to the search for and applications of new topological phases of matter. Currently, no methods can provide depth profiling near surfaces or at interfaces of topologically inequivalent materials. Such a method could advance the study of interactions. Herein we present a non-invasive depth-profiling technique based on $β$ -NMR spectroscopy of radioactive $^8$ Li $^+$ ions that can provide "one-dimensional imaging" in films of fixed thickness and generates nanoscale views of the electronic wavefunctions and magnetic order at topological surfaces and interfaces. By mapping the $^8$ Li nuclear resonance near the surface and 10 nm deep into the bulk of pure and Cr-doped bismuth antimony telluride films, we provide signatures related to the TI properties and their topological non-trivial characteristics that affect the electron-nuclear hyperfine field, the metallic shift and magnetic order. These nanoscale variations in $β$ -NMR parameters reflect the unconventional properties of the topological materials under study, and understanding the role of heterogeneities is expected to lead to the discovery of novel phenomena involving quantum materials.

preprint2015arXiv

NMR study of native defects in PbSe

While each atom species in PbSe corresponds to a single crystallographic site and transport measurements reveal a single carrier density, $^{207}$ Pb NMR reveals a more complicated picture than previously thought comprising three discrete homogeneous carrier components, each associated with $n$ - or $p$ -type carrier fractions. The origins of these fractions are discussed in terms of electronic heterogeneity of the native semiconductor. The interaction mechanism between nuclear spins and lattice vibrations via fluctuating spin-rotation interaction, applicable to heavy spin-1/2 nuclei [Phys. Rev. B 74, 214420 (2006)], does not hold. Instead, a higher-order temperature dependence dominates the relaxation pathway. Shallow acceptor states and deep level defects in the midgap explain the complex temperature dependence of the direct band gap.

preprint2015arXiv

Site-Specific Contributions to the Band Inversion in a Topological Crystalline Insulator

In a topological crystalline insulator (TCI) the inversion of the bulk valence and conduction bands is a necessary condition to observe surface metallic states. Solid solutions of Pb $_{1-x}$ Sn $_x$ Te have been shown to be TCI, where band inversion occurs as a result of the band gap evolution upon alloying with Sn. The origins of this band inversion remain unclear. Herein the role of Sn insertion into the PbTe matrix is investigated for the $p$ -type Pb $_{1-x}$ Sn $_x$ Te series with $x$ = 0, 0.35, 0.60, and 1.00 via nuclear magnetic resonance (NMR) and transport measurements. $^{207}$ Pb, $^{119}$ Sn, and $^{125}$ Te line shapes, spin-lattice relaxation rates, and Knight shifts provide site-specific characterization of the electronic band structure. This probe of the electronic band structure shows that the band inversion is unaffected by lattice distortions but related to spatial electronic inhomogeneities formed by Sn incorporation into the PbTe matrix. Strong relativistic effects are found to be responsible for the band inversion, regardless of carrier type and concentration, suggesting a novel interpretation of the band gap evolution with composition. The temperature dependences of the NMR parameters reveal a negative temperature coefficient of the direct gap for SnTe and positive coefficient for PbTe.

preprint2015arXiv

Understanding Bulk Defects in Topological Insulators from Nuclear-Spin Interactions

Non-invasive local probes are needed to characterize bulk defects in binary and ternary chalcogenides. These defects contribute to the non-ideal behavior of topological insulators. We have studied bulk electronic properties via $^{125}$ Te NMR in Bi $_2$ Te $_3$ , Sb $_2$ Te $_3$ , Bi $_{0.5}$ Sb $_{1.5}$ Te $_3$ , Bi $_2$ Te $_2$ Se and Bi $_2$ Te $_2$ S. A distribution of defects gives rise to asymmetry in the powder lineshapes. We show how the Knight shift, line shape and spin-lattice relaxation report on carrier density, spin-orbit coupling and phase separation in the bulk. The present study confirms that the ordered ternary compound Bi $_2$ Te $_2$ Se is the best TI candidate material at the present time. Our results, which are in good agreement with transport and ARPES studies, help establish the NMR probe as a valuable method to characterize the bulk properties of these materials.

preprint2013arXiv

NMR Probe of Metallic States in Nanoscale Topological Insulators

A 125Te NMR study of bismuth telluride nanoparticles as function of particle size revealed that the spin-lattice relaxation is enhanced below 33 nm, accompanied by a transition of NMR spectra from single to bimodal regime. The satellite peak features a negative Knight shift and higher relaxivity, consistent with core polarization from p-band carriers. Whereas nanocrystals follow a Korringa law in the range 140-420K, micrometer particles do so only below 200K. The results reveal increased metallicity of these nanoscale topological insulators in the limit of higher surface-to-volume ratios.

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Dimitrios Koumoulis

Research overview

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6 publications

A combined NMR and DFT study of Narrow Gap Semiconductors: The case of PbTe

Nanoscale $β$ -Nuclear Magnetic Resonance Depth Imaging of Topological Insulators

NMR study of native defects in PbSe

Site-Specific Contributions to the Band Inversion in a Topological Crystalline Insulator

Understanding Bulk Defects in Topological Insulators from Nuclear-Spin Interactions

NMR Probe of Metallic States in Nanoscale Topological Insulators

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Dimitrios Koumoulis

Research overview

Is this your work?

6 publications

A combined NMR and DFT study of Narrow Gap Semiconductors: The case of PbTe

Nanoscale βββ-Nuclear Magnetic Resonance Depth Imaging of Topological Insulators

NMR study of native defects in PbSe

Site-Specific Contributions to the Band Inversion in a Topological Crystalline Insulator

Understanding Bulk Defects in Topological Insulators from Nuclear-Spin Interactions

NMR Probe of Metallic States in Nanoscale Topological Insulators

See the researcher in context

Building this map preview

Nanoscale $β$ -Nuclear Magnetic Resonance Depth Imaging of Topological Insulators