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Belinda Leung

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cond-mat.mtrl-sci cond-mat.mes-hall Biological Physics physics.med-ph

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preprint2015arXiv

Nanodiamond Landmarks for Subcellular Multimodal Optical and Electron Imaging

There is a growing need for biolabels that can be used in both optical and electron microscopies, are non-cytotoxic, and do not photobleach. Such biolabels could enable targeted nanoscale imaging of sub-cellular structures, and help to establish correlations between conjugation-delivered biomolecules and function. Here we demonstrate a subcellular multi-modal imaging methodology that enables localization of inert particulate probes, consisting of nanodiamonds having fluorescent nitrogen-vacancy centers. These are functionalized to target specific structures, and are observable by both optical and electron microscopies. Nanodiamonds targeted to the nuclear pore complex are rapidly localized in electron-microscopy diffraction mode to enable "zooming-in" to regions of interest for detailed structural investigations. Optical microscopies reveal nanodiamonds for in-vitro tracking or uptake-confirmation. The approach is general, works down to the single nanodiamond level, and can leverage the unique capabilities of nanodiamonds, such as biocompatibility, sensitive magnetometry, and gene and drug delivery.

preprint2015arXiv

Site-Specific Contributions to the Band Inversion in a Topological Crystalline Insulator

In a topological crystalline insulator (TCI) the inversion of the bulk valence and conduction bands is a necessary condition to observe surface metallic states. Solid solutions of Pb $_{1-x}$ Sn $_x$ Te have been shown to be TCI, where band inversion occurs as a result of the band gap evolution upon alloying with Sn. The origins of this band inversion remain unclear. Herein the role of Sn insertion into the PbTe matrix is investigated for the $p$ -type Pb $_{1-x}$ Sn $_x$ Te series with $x$ = 0, 0.35, 0.60, and 1.00 via nuclear magnetic resonance (NMR) and transport measurements. $^{207}$ Pb, $^{119}$ Sn, and $^{125}$ Te line shapes, spin-lattice relaxation rates, and Knight shifts provide site-specific characterization of the electronic band structure. This probe of the electronic band structure shows that the band inversion is unaffected by lattice distortions but related to spatial electronic inhomogeneities formed by Sn incorporation into the PbTe matrix. Strong relativistic effects are found to be responsible for the band inversion, regardless of carrier type and concentration, suggesting a novel interpretation of the band gap evolution with composition. The temperature dependences of the NMR parameters reveal a negative temperature coefficient of the direct gap for SnTe and positive coefficient for PbTe.

preprint2015arXiv

Spin-lattice relaxation in bismuth chalcogenides

Bismuth chalcogenides Bi $_2$ Se $_3$ and Bi $_2$ Te $_3$ are semiconductors, which can be both thermoelectric materials (TE) and topological insulators (TI). Lattice defects arising from vacancies, impurities, or dopants in these materials are important in that they provide the charge carriers in TE applications and compromise the performance of these materials as TIs. We present the first solid-state nuclear magnetic resonance (NMR) study of the $^{77}$ Se and $^{125}$ Te NMR resonances in polycrystalline powders of Bi $_2$ Se $_3$ and Bi $_2$ Te $_3$ , respectively. The spin-lattice ( $T_1$ ) relaxation is modeled by at most two exponentials. Within the framework of this model, the NMR measurement is sensitive to the distribution of native defects within these materials. One component corresponds to a stoichiometric fraction, an insulator with a very long $T_1$ , whereas the other component is attributed to a sample fraction with high defect content with a short $T_1$ resulting from interaction with the conduction carriers. The absence of a very long $T_1$ in the bismuth telluride suggests defects throughout the sample. For the bismuth selenide, defect regions segregate into domains. We also find a substantial difference in the short $T_1$ component for $^{125}$ Te nuclei (76 ms) and $^{77}$ Se (0.63 s) in spite of the fact that these materials have nearly identical lattice structures, chemical and physical properties. Investigations of the NMR shift and Korringa law indicate that the coupling to the conduction band electrons at the chalcogenide sites is much stronger in the telluride. The results are consistent with a stronger spin-orbit coupling (SOC) to the $p$ -band electrons in the telluride. If most parameters of a given material are kept equal, this type of experiment could provide a useful probe of SOC in engineered TI materials.

preprint2015arXiv

Understanding Bulk Defects in Topological Insulators from Nuclear-Spin Interactions

Non-invasive local probes are needed to characterize bulk defects in binary and ternary chalcogenides. These defects contribute to the non-ideal behavior of topological insulators. We have studied bulk electronic properties via $^{125}$ Te NMR in Bi $_2$ Te $_3$ , Sb $_2$ Te $_3$ , Bi $_{0.5}$ Sb $_{1.5}$ Te $_3$ , Bi $_2$ Te $_2$ Se and Bi $_2$ Te $_2$ S. A distribution of defects gives rise to asymmetry in the powder lineshapes. We show how the Knight shift, line shape and spin-lattice relaxation report on carrier density, spin-orbit coupling and phase separation in the bulk. The present study confirms that the ordered ternary compound Bi $_2$ Te $_2$ Se is the best TI candidate material at the present time. Our results, which are in good agreement with transport and ARPES studies, help establish the NMR probe as a valuable method to characterize the bulk properties of these materials.

preprint2013arXiv

77Se NMR Investigation of Fe-doped Bi2Se3

Bismuth selenide is both a thermoelectric material and topological insulator. Defects and dopants create conduction in thermoelectric applications. However, such defects may degrade the performance as a topological insulator (TI). Magnetic impurities such as iron open a band gap at the Dirac point on the surface. Since magnetically-doped TIs are important in technological applications, a good understanding of their properties is needed. In this article, 77Se nuclear magnetic resonance (NMR) spectroscopy has been used to investigate Fe-doped Bi2Se3. Spin-lattice relaxation measurements indicate that the Fe dopants provide a spin diffusion relaxation mechanism at low temperatures for the 77Se. Above 320 K, the predominant 77Se relaxation mechanism resulting from interaction with the conduction carriers is thermally induced with an activation energy of 21.5 kJ/mol (5.1 kcal/mol, 222 meV) and likely arises from inter-band excitations. Magic-angle spinning produces negligible narrowing of the 77Se resonance at 7 T, suggesting a statistical distribution of material defects and is also consistent with a dipolar interaction with the neighboring quadrupolar nucleus.

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Belinda Leung

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5 publications

Nanodiamond Landmarks for Subcellular Multimodal Optical and Electron Imaging

Site-Specific Contributions to the Band Inversion in a Topological Crystalline Insulator

Spin-lattice relaxation in bismuth chalcogenides

Understanding Bulk Defects in Topological Insulators from Nuclear-Spin Interactions

77Se NMR Investigation of Fe-doped Bi2Se3

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