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Diana L. Huffaker

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cond-mat.mes-hall physics.optics cond-mat.mtrl-sci physics.app-ph

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preprint2022arXiv

Room-Temperature Quantum Emitter in Aluminum Nitride

A device that is able to produce single photons is a fundamental building block for a number of quantum technologies. Significant progress has been made in engineering quantum emission in the solid state, for instance, using semiconductor quantum dots as well as defect sites in bulk and two-dimensional materials. Here we report the discovery of a room-temperature quantum emitter embedded deep within the band gap of aluminum nitride. Using spectral, polarization, and photon-counting time-resolved measurements we demonstrate bright ($>10^5$ counts per second), pure ($g^{(2)}(0) < 0.2$), and polarized room-temperature quantum light emission from color centers in this commercially important semiconductor.

preprint2020arXiv

Integrated and Spectrally Selective Thermal Emitters Enabled by Layered Metamaterials

Nanophotonic engineering of light-matter interaction at subwavelength scale allows thermal radiation that is fundamentally different from that of traditional thermal emitters and provides exciting opportunities for various thermal-photonic applications. We propose a new kind of integrated and electrically controlled thermal emitter that exploits layered metamaterials with lithography-free and dielectric/metallic nanolayers. We demonstrate both theoretically and experimentally that the proposed concept can create a strong photonic bandgap in the visible regime and allow small impedance mismatch at the infrared wavelengths, which gives rise to optical features of significantly enhanced emissivity at the broad infrared wavelengths of 1.4-14 um as well as effectively suppressed emissivity in the visible region. The electrically driven metamaterial devices are optically and thermally stable at temperature up to ~800 K with electro-optical conversion efficiency reaching ~30%. We believe that the proposed high efficiency thermal emitters will pave the way towards integrated infrared light source platforms for various thermal-photonic applications and particularly provide a novel alternative for cost-effective, compact, low glare, and energy-efficient infrared heating.

preprint2020arXiv

Topological Insulator Laser Using Valley-Hall Photonic Crystals

Topological photonics has recently been proved a robust framework for manipulating light. Active topological photonic systems, in particular, enable richer fundamental physics by employing nonlinear light-matter interactions, thereby opening a new landscape for applications such as topological lasing. Here we report an all-dielectric topological insulator laser scheme based on semiconductor cavities formed by topologically distinct Kagome photonic crystals. The proposed planar semiconductor Kagome lattice allows broadband edge states below the light line due to photonic valley hall effect in telecommunication region, which provides a new route to retrieve nontrivial photonic topology and to develop integrated topological systems for robust light generation and transport.

preprint2013arXiv

Strongly coupled slow-light polaritons in one-dimensional disordered localized states

Cavity quantum electrodynamics advances the coherent control of a single quantum emitter with a quantized radiation field mode, typically piecewise engineered for the highest finesse and confinement in the cavity field. This enables the possibility of strong coupling for chip-scale quantum processing, but till now is limited to few research groups that can achieve the precision and deterministic requirements for these polariton states. Here we observe for the first time coherent polariton states of strong coupled single quantum dot excitons in inherently disordered one-dimensional localized modes in slow-light photonic crystals. Large vacuum Rabi splittings up to 311 μeV are observed, one of the largest avoided crossings in the solid-state. Our tight-binding models with quantum impurities detail these strong localized polaritons, spanning different disorder strengths, complementary to model-extracted pure dephasing and incoherent pumping rates. Such disorder-induced slow-light polaritons provide a platform towards coherent control, collective interactions, and quantum information processing.

preprint2013arXiv

The Dependence of Alloy Composition of InGaAs Inserts in GaAs Nanopillars on Selective-Area Pattern Geometry

GaAs nanopillars with 150 nm - 200 nm long axial InGaAs inserts are grown by MOCVD via catalyst-free selective-area-epitaxy (SAE). The alloy composition of the InGaAs region, as determined by room-temperature photoluminescence (PL), depends critically on the pitch and diameter of the selective-area pattern geometry. The PL emission varies based on pattern geometry from 1.0 \{mu}m to 1.25 \{mu}m corresponding to a In to Ga ratio from 0.15 to > 0.3. This In enrichment is explained by a pattern dependent change in the incorporation rate for In and Ga. Capture coefficients for Ga and In adatoms are calculated for each pattern pitch. As the pitch decreases, these data reveal a contest between a synergetic effect (related to nanopillar density) that increases the growth rate and a competition for available material that limits the growth rate. Gallium is more susceptible to both of these effects, causing the observed changes in alloy composition.

preprint2010arXiv

Poole-Frenkel Effect and Phonon-Assisted Tunneling in GaAs Nanowires

We present electronic transport measurements of GaAs nanowires grown by catalyst-free metal-organic chemical vapor deposition. Despite the nanowires being doped with a relatively high concentration of substitutional impurities, we find them inordinately resistive. By measuring sufficiently high aspect-ratio nanowires individually in situ, we decouple the role of the contacts and show that this semi-insulating electrical behavior is the result of trap-mediated carrier transport. We observe Poole-Frenkel transport that crosses over to phonon-assisted tunneling at higher fields, with a tunneling time found to depend predominantly on fundamental physical constants as predicted by theory. By using in situ electron beam irradiation of individual nanowires we probe the nanowire electronic transport when free carriers are made available, thus revealing the nature of the contacts.