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Anthony J. Bennett

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Published work

10 published item(s)

preprint2026arXiv

Controlled epitaxy of room-temperature quantum emitters in gallium nitride

The ability to generate quantum light at room temperature on a mature semiconductor platform opens up new possibilities for quantum technologies. Heteroepitaxial growth of gallium nitride on silicon substrates offers the opportunity to leverage existing expertise and wafer-scale manufacturing to integrate bright quantum emitters in this material within cavities, diodes, and photonic circuits. Until now, it has only been possible to grow GaN QEs at uncontrolled depths on sapphire substrates, which is disadvantageous for potential device architectures. Here, we report a method to produce GaN QEs by metal-organic vapor phase epitaxy at a controlled depth in the crystal through the application of silane treatment and subsequent growth of 3D islands. We demonstrate this process on highly technologically relevant silicon substrates, producing room-temperature QEs with a high Debye Waller factor and strongly anti-bunched emission.

preprint2026arXiv

The origin and influence of non-cavity modes in a micropillar Bragg microcavity

Controlling the photonic environment of emitters is essential to the design of classical and quantum light sources. We study the case of a dipole-like emitter in a cylindrical pillar etched into a planar Bragg microcavity, which is a common design of quantum-dot single photon source. In addition to the well-known cavity modes created by the high-reflectivity of the Bragg mirrors at small in-plane wavevectors, we show the presence of broad spectral features that play a key role in controlling photon collection efficiency and Purcell enhancement. These non-cavity modes are insensitive to the periodic index modulation of the Bragg reflectors, but arise from the cylindrical pillar geometry, as we show by comparison with simulations of uniform pillars, which reproduce the non-cavity modes. This approach provides a tool for understanding and modelling these often-disregarded decay channels as a function of source height, cavity dimensions and surface layers.

preprint2025arXiv

Enhanced quantum magnetometry with a laser-written integrated photonic diamond chip

An ensemble of negatively charged nitrogen-vacancy centers in diamond can act as a precise quantum sensor even under ambient conditions. In particular, to optimize thier sensitivity, it is crucial to increase the number of spins sampled and maximize their coupling to the detection system, without degrading their spin properties. In this paper, we demonstrate enhanced quantum magnetometry via a high-quality buried laser-written waveguide in diamond with a 4.5 ppm density of nitrogen-vacancy centers. We show that the waveguide-coupled nitrogen-vacancy centers exhibit comparable spin coherence properties as that of nitrogen-vacancy centers in pristine diamond using time-domain optically detected magnetic resonance spectroscopy. Waveguide-enhanced magnetic field sensing is demonstrated in a fiber-coupled integrated photonic chip, where probing an increased volume of high-density spins results in 63 pT$.$Hz $^{-1/2}$ of DC-magnetic field sensitivity and 20 pT$.$Hz $^{-1/2}$ of AC magnetic field sensitivity. This on-chip sensor realizes at least an order of magnitude improvement in sensitivity compared to the conventional confocal detection setup, paving the way for microscale sensing with nitrogen-vacancy ensembles.

preprint2022arXiv

Room-Temperature Quantum Emitter in Aluminum Nitride

A device that is able to produce single photons is a fundamental building block for a number of quantum technologies. Significant progress has been made in engineering quantum emission in the solid state, for instance, using semiconductor quantum dots as well as defect sites in bulk and two-dimensional materials. Here we report the discovery of a room-temperature quantum emitter embedded deep within the band gap of aluminum nitride. Using spectral, polarization, and photon-counting time-resolved measurements we demonstrate bright ($>10^5$ counts per second), pure ($g^{(2)}(0) < 0.2$), and polarized room-temperature quantum light emission from color centers in this commercially important semiconductor.

preprint2022arXiv

Two-Photon Interference of Single Photons from Dissimilar Sources

Entanglement swapping and heralding are at the heart of many protocols for distributed quantum information. For photons, this typically involves Bell state measurements based on two-photon interference effects. In this context, hybrid systems that combine high rate, ultra-stable and pure quantum sources with long-lived quantum memories are particularly interesting. Here, we develop a theoretical description of pulsed two-photon interference of photons from dissimilar sources to predict the outcomes of second-order cross-correlation measurements. These are directly related to, and hence used to quantify, photon indistinguishability. We study their dependence on critical system parameters such as quantum state lifetime and frequency detuning, and quantify the impact of emission time jitter, pure dephasing and spectral wandering. Our results show that for fixed lifetime of emitter one, for each frequency detuning there is an optimal lifetime of emitter two that leads to highest photon indistinguishability. Expectations for different hybrid combinations involving III-V quantum dots, color centers in diamond, 2D materials and atoms are quantitatively compared for real-world system parameters. Our work both provides a theoretical basis for the treatment of dissimilar emitters and enables assessment of which imperfections can be tolerated in hybrid photonic quantum networks.

preprint2020arXiv

Tailoring Topological Edge States with Photonic Crystal Nanobeam Cavities

The realization of topological edge states (TESs) in photonic systems has provided unprecedented opportunities for manipulating light in novel manners. The Su-Schrieffer-Heeger (SSH) model has recently gained significant attention and has been exploited in a wide range of photonic platforms to create TESs. We develop a photonic topological insulator strategy based on SSH photonic crystal nanobeam cavities. In contrast to the conventional photonic SSH schemes which are based on alternately tuned coupling strength in one-dimensional lattice, our proposal provides higher flexibility and allows tailoring TESs by manipulating mode coupling in a two-dimensional manner. We reveal that the proposed hole-array based nanobeams in a dielectric membrane can selectively tailor single or double TESs in the telecommunication region by controlling the coupling strength of the adjacent SSH nanobeams in both vertical and horizontal directions. Our finding provides an in-depth understanding of the SSH model, and allows an additional degree of freedom in exploiting the SSH model for integrated topological photonic devices with unique properties and functionalities.

preprint2020arXiv

Topological Insulator Laser Using Valley-Hall Photonic Crystals

Topological photonics has recently been proved a robust framework for manipulating light. Active topological photonic systems, in particular, enable richer fundamental physics by employing nonlinear light-matter interactions, thereby opening a new landscape for applications such as topological lasing. Here we report an all-dielectric topological insulator laser scheme based on semiconductor cavities formed by topologically distinct Kagome photonic crystals. The proposed planar semiconductor Kagome lattice allows broadband edge states below the light line due to photonic valley hall effect in telecommunication region, which provides a new route to retrieve nontrivial photonic topology and to develop integrated topological systems for robust light generation and transport.

preprint2015arXiv

Quantum photonics hybrid integration platform

Fundamental to integrated photonic quantum computing is an on-chip method for routing and modulating quantum light emission. We demonstrate a hybrid integration platform consisting of arbitrarily designed waveguide circuits and single photon sources. InAs quantum dots (QD) embedded in GaAs are bonded to an SiON waveguide chip such that the QD emission is coupled to the waveguide mode. The waveguides are SiON core embedded in a SiO2 cladding. A tuneable Mach Zehnder modulates the emission between two output ports and can act as a path-encoded qubit preparation device. The single photon nature of the emission was verified by an on-chip Hanbury Brown and Twiss measurement.

preprint2014arXiv

In-plane emission of indistinguishable photons generated by an integrated quantum emitter

We demonstrate the emission of indistinguishable photons along a semiconductor chip originating from carrier recombination in an InAs quantum dot. The emitter is integrated in the waveguiding region of a photonic crystal structure, allowing for on-chip light propagation. We perform a Hong-Ou-Mandel-type of experiment with photons collected from the exit of the waveguide and we observe two-photon interference under continuous wave excitation. Our results pave the way for the integration of quantum emitters in advanced photonic quantum circuits.

preprint2013arXiv

Voltage tunability of single spin-states in a quantum dot

Single spins in the solid-state offer a unique opportunity to store and manipulate quantum information, and to perform quantum-enhanced sensing of local fields and charges. Optical control of these systems using techniques developed in atomic physics has yet to exploit all the advantages of the solid-state. We demonstrate voltage tunability of the spin energy levels in a single quantum dot by modifying how spins sense magnetic field. We find the in-plane g-factor varies discontinuously for electrons, as more holes are loaded onto the dot. In contrast, the in-plane hole g-factor varies continuously. The device can change the sign of the in-plane g-factor of a single hole, at which point an avoided crossing is observed in the two spin eigenstates. This is exactly what is required for universal control of a single spin with a single electrical gate.