BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Deepnarayan Biswas

Deepnarayan Biswas contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elphysics.app-ph

Trust snapshot

Quick read

Trust 17 - UnverifiedVerification L1Unclaimed author
4works
0followers
4topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2022arXiv

Epitaxial growth of a two-dimensional topological insulator candidate: monolayer Si2Te2

Hexagonal Si2Te2 monolayers (ML-Si2Te2) were predicted to show strain-dependent band-crossover between semiconducting and room-temperature quantum spin Hall phases. However, investigations on this artificial two-dimensional (2D) material have mainly been restricted to theoretical calculations because its bulk counterpart does not exist naturally. Here, we report on the successful epitaxial growth of ML-Si2Te2 films on Sb2Te3 thin film substrates. High-quality (1*1) ML-Si2Te2 films with a coverage as high as 95% were obtained as revealed by scanning tunneling microscopy. X-ray photoelectron spectroscopy confirms the absence of intermixing between Si2Te2 and Sb2Te3 at the interface. By combining scanning tunneling spectroscopy with density functional theory calculations, we demonstrate the semiconducting band structure of ML-Si2Te2 on Sb2Te3. Furthermore, it is theoretically predicted that the system can be driven into the nontrivial phase via reducing the strain by 4.4% using strain engineering. Our results pave the way for in-depth investigations on this 2D topological insulator candidate.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Mixed ground state in Fe-Ni Invar alloys

We investigate the ground state properties of Invar alloys via detailed study of the electronic structure of Fe$_{1-x}$Ni$_x$ alloys ($x$ = 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.9) employing $x$-ray photoelectron spectroscopy (XPS). While all the alloys exhibit soft ferromagnetic behavior with Curie temperature much higher than the room temperature, the results for invar alloy, Fe$_{0.6}$Ni$_{0.4}$ exhibit anomalous behavior. Moreover, the magneto-resistance of the Invar alloy becomes highly negative while the end members possess positive magneto-resistance. The core level spectra of the Invar alloy exhibit emergence of a distinct new feature below 20~K while all other Fe-Ni alloys exhibit no temperature dependence down to 10~K. Interestingly, the shallow core level spectra (3$s$, 3$p$) of Fe and Ni of the Invar alloy reveal stronger deviation at low temperatures compared to the deep core levels (2$s$, 2$p$) indicating crystal field effect. It appears that there is a large precipitation of antiferromagnetic $γ^\prime$ phase below 20 K possessing low magnetic moment (0.5$μ_B$) on Fe within the $α$ phase. The discovery of negative magneto-resistance, anomalous magnetization at low temperature and the emergence of unusual new features in the core levels at low temperature provide an evidence of mixed phase in the ground state of Invar alloys.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Momentum-resolved view of highly tunable many-body effects in a graphene/hBN field-effect device

Integrating the carrier tunability of a functional two-dimensional material electronic device with a direct probe of energy- and momentum-resolved electronic excitations is essential to gain insights on how many-body interactions are influenced during device operation. Here, we use micro-focused angle-resolved photoemission in order to analyze many-body interactions in back-gated graphene supported on hexagonal boron nitride. By extracting the doping-dependent quasiparticle dispersion and self-energy, we observe how these interactions renormalize the Dirac cone and impact the electron mobility of our device. Our results are not only limited to a finite energy range around the Fermi level, as in electron transport measurements, but describe interactions on a much wider energy scale, extending beyond the regime of hot carrier excitations.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Selective control of localised vs. delocalised carriers in anatase TiO2 through reaction with O2

Two-dimensional (2D) metallic states induced by oxygen vacancies at oxide surfaces and interfaces provide new opportunities for the development of advanced applications, but the ability to control the behavior of these states is still limited. We used Angle Resolved Photoelectron Spectroscopy combined with density functional theory to study the reactivity of states induced by the oxygen vacancies at the (001)-(1x4) surface of anatase TiO2, where both 2D metallic and deeper lying in-gap states (IGs) are observed. Remarkably, the two states exhibit very different evolution when the surface is exposed to molecular O2: while IGs are almost completely quenched, the metallic states are only weakly affected. The energy scale analysis for the vacancy migration and recombination resulting from the DFT calculations confirms indeed that only the IGs originate from and remain localized at the surface, whereas the metallic states originate from subsurface vacancies, whose migration and recombination at the surface is energetically less favorable rendering them therefore insensitive to oxygen dosing.

0 citations0 reviewsNo code linkedOpen access