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B. Sivaiah

B. Sivaiah contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci cond-mat.other cond-mat.str-el

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preprint2016arXiv

Griffiths phase and critical behavior in layered Sr$_2$IrO$_4$ ferromagnet

We report the existence of Griffiths phase (GP) and its influence on critical phenomena in layered Sr$_2$IrO$_4$ ferromagnet (T$_C$ = 221.5 K). The power law behavior of inverse magentic susceptibility, 1/$χ$(T) with exponent $λ= 0.18(2)$ confirm the GP in the regime T$_C$ $<$ T $\leq$ T$_G$ = 279.0(5) K. Moreover, the detailed critical analysis via modified Arrott plot method exhibits unrealistic critical exponents $β$ = 0.77(1), $γ$ = 1.59(2) and $δ= 3.06(4)$, in corroboration with magneto-caloric study. The abnormal exponent values have been viewed in context of ferromagnetic-Griffiths phase transition. The GP has been further analyzed using Bray model, which yields a reliable value of $β$ = 0.19(2), belonging to the two-dimensional (2D) XYh$_4$ universality class with strong anisotropy present in Sr$_2$IrO$_4$. The present study proposes Bray model as a possible tool to investigate the critical behavior for Griffiths ferromagnets in place of conventional Arrott plot analysis. The possible origins of GP and its correlation with insulating nature of Sr$_2$IrO$_4$ have been discussed.

preprint2013arXiv

Effective doping of carbon nanotubes in phosphor and observation of bright electroluminescence by field enhanced hot electron injection

Present work focuses on the effective doping of multi-walled carbon nanotube (CNT) in the ZnS:Cu phosphor system and thereafter improvement in the optical performance of electroluminescent (EL) device due to the effect of increased local field. To facilitate doping of CNTs into the phosphor and decrease the operating voltage of the EL device, CNTs were shortened by milling and incorporated effectively using a flux assisted solid-state annealing reaction. Interestingly shorter the length of CNTs used, greater was the local field enhancement, brightness and efficiency observed for the EL devices. When the field is applied, adequate charge carriers are tunneled into the ZnS:Cu system through the tips of the CNTs by forming high energy hot spots thus enhancing the local field. The improved device characteristics are due to field enhancement without flowing of undesired current in the EL device and effective transfer of energy from hot spots to copper activator causing field-ionization. The detailed electrical characterization of the novel EL device along with its brightness measurements are also presented by considering the hot electron injection model.