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Researcher profile

Debasish Mondal

Debasish Mondal contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elnucl-ex

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Published work

3 published item(s)

preprint2023arXiv

Modulation-Doping a Correlated Electron Insulator

Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO2) is a prototypical CEM with a temperature-dependent metal-to-insulator (MIT) transition with a concomitant crystal symmetry change. External control of MIT in VO2 - especially without inducing structural changes - has been a long-standing challenge. In this work, we design and synthesize modulation-doped VO2-based thin film heterostructures that closely emulate a textbook example of filling control in a correlated electron insulator. Using a combination of charge transport, hard x-ray photoelectron spectroscopy, and structural characterization, we show that the insulating state can be doped to achieve carrier densities greater than 5x10^21 cm^(-3) without inducing any measurable structural changes. We find that the MIT temperature (T_MIT) continuously decreases with increasing carrier concentration. Remarkably, the insulating state is robust even at doping concentrations as high as ~0.2 e-/vanadium. Finally, our work reveals modulation-doping as a viable method for electronic control of phase transitions in correlated electron oxides with the potential for use in future devices based on electric-field controlled phase transitions.

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preprint2020arXiv

Excitation energy and angular momentum dependence of the nuclear level density parameter around A$\approx $110

Neutron kinetic energy spectra in coincidence with low-energy $γ$-ray multiplicities have been measured around $A\approx $ 110 in the $^{16}$O, $^{20}$Ne + $^{93}$Nb reactions in a compound nuclear excitation energy range of $\approx $ 90 - 140 MeV. The excitation energy (temperature) and angular momentum (spin) dependence of the inverse level density parameter $k$ has been investigated by comparing the experimental data with statistical Hauser-Feshbach calculation. In contrast to the available systematic in this mass region, the inverse level density parameter showed an appreciable increase as a function of the excitation energy. The extracted $k$-values at different angular momentum regions, corresponding to different $γ$-multiplicities also showed an overall increase with the average nuclear spins. The experimental results have been compared with a microscopic statistical-model calculation and found to be in reasonable agreement with the data. The results provide useful information to understand the variation of nuclear level density at high temperature and spins.

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preprint2019arXiv

Atomically-Smooth Single-Crystalline VO$_2$ thin films with Bulk-like Metal-Insulator Transitions

Atomically-abrupt interfaces in transition metal oxide (TMO) heterostructures could host a variety of exotic condensed matter phases that may not be found in the bulk materials at equilibrium. A critical step in the development of such atomically-sharp interfaces is the deposition of atomically-smooth TMO thin films. Optimized deposition conditions exist for the growth of perovskite oxides. However, the deposition of rutile oxides, such as VO$_2$, with atomic-layer precision has been challenging. In this work, we used pulsed laser deposition (PLD) to grow atomically-smooth VO$_2$ thin films on rutile TiO$_2$ (101) substrates. We show that optimal substrate preparation procedure followed by the deposition of VO$_2$ films at a temperature conducive for step-flow growth mode is essential for achieving atomically-smooth VO$_2$ films. The films deposited at optimal substrate temperatures show a step and terrace structure of the underlying TiO$_2$ substrate. At lower deposition temperatures, there is a transition to a mixed growth mode comprising of island growth and layer-by-layer growth modes. VO$_2$ films deposited at optimal substrate temperatures undergo a metal to insulator transition at a transition temperature of $\sim$325 K with $\sim$10$^3$ times increase in resistance, akin to MIT in bulk VO$_2$.

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