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Source author record

Davood Shahrjerdi

Davood Shahrjerdi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciHardware Architecture

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Published work

5 published item(s)

preprint2022arXiv

How to Report and Benchmark Emerging Field-Effect Transistors

Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of multiple device parameters. More importantly, the interdisciplinarity of this research community results in a lack of consistent reporting and benchmarking guidelines. Here we report a consensus among the authors regarding guidelines for reporting and benchmarking important FET parameters and performance metrics. We provide an example of this reporting and benchmarking process for a two-dimensional (2D) semiconductor FET. Our consensus will help promote an improved approach for assessing device performance in emerging FETs, thus aiding the field to progress more consistently and meaningfully.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

A 700uW 1GS/s 4-bit Folding-Flash ADC in 65nm CMOS for Wideband Wireless Communications

We present the design of a low-power 4-bit 1GS/s folding-flash ADC with a folding factor of two. The design of a new unbalanced double-tail dynamic comparator affords an ultra-low power operation and a high dynamic range. Unlike the conventional approaches, this design uses a fully matched input stage, an unbalanced latch stage, and a two-clock operation scheme. A combination of these features yields significant reduction of the kick-back noise, while allowing the design flexibility for adjusting the trip points of the comparators. As a result, the ADC achieves SNDR of 22.3 dB at 100MHz and 21.8 dB at 500MHz (i.e. the Nyquist frequency). The maximum INL and DNL are about 0.2 LSB. The converter consumes about 700uW from a 1-V supply yielding a figure of merit of 65fJ/conversion step. These attributes make the proposed folding-flash ADC attractive for the next-generation wireless applications.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

A sub-1-volt analog metal oxide memristive-based synaptic device for energy-efficient spike-based computing systems

Nanoscale metal oxide memristors have potential in the development of brain-inspired computing systems that are scalable and efficient1-3. In such systems, memristors represent the native electronic analogues of the biological synapses. However, the characteristics of the existing memristors do not fully support the key requirements of synaptic connections: high density, adjustable weight, and low energy operation. Here we show a bilayer memristor that is forming-free, low-voltage (~|0.8V|), energy-efficient (full On/Off switching at ~2pJ), and reliable. Furthermore, pulse measurements reveal the analog nature of the memristive device, that is it can be directly programmed to intermediate resistance states. Leveraging this finding, we demonstrate spike-timing-dependent plasticity (STDP), a spike-based Hebbian learning rule4. In those experiments, the memristor exhibits a marked change in the normalized synaptic strength (>30 times) when the pre- and post-synaptic neural spikes overlap. This demonstration is an important step towards the physical construction of high density and high connectivity neural networks.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Highly Non-linear and Reliable Amorphous Silicon Based Back-to-Back Schottky Diode as Selector Device for Large Scale RRAM Arrays

In this work we present silicon process compatible, stable and reliable ($>10^{8}$cycles), high non-linearity ratio at half-read voltage ($>5\times 10^{5}$), high speed ($<60ns$) low operating voltage ($<2V$) back-to-back Schottky diodes. Materials choice of electrode, thickness of semiconductor layer and doping level are investigated by numerical simulation, experiments and current-voltage equations to give a general design consideration when back-to-back Schottky diodes are used as selector device for Resistive Random Access Memory(RRAM) arrays.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Scaling Properties of Ge-SixGe1-x Core-Shell Nanowire Field Effect Transistors

We demonstrate the fabrication of high-performance Ge-SixGe1-x core-shell nanowire field-effect transistors with highly doped source and drain, and systematically investigate their scaling properties. Highly doped source and drain regions are realized by low energy boron implantation, which enables efficient carrier injection with a contact resistance much lower than the nanowire resistance. We extract key device parameters, such as intrinsic channel resistance, carrier mobility, effective channel length, and external contact resistance, as well as benchmark the device switching speed and ON/OFF current ratio.

0 citations0 reviewsNo code linkedOpen access