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Aaron D. Franklin

Aaron D. Franklin appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-ph

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Published work

4 published item(s)

preprint2022arXiv

How to Report and Benchmark Emerging Field-Effect Transistors

Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of multiple device parameters. More importantly, the interdisciplinarity of this research community results in a lack of consistent reporting and benchmarking guidelines. Here we report a consensus among the authors regarding guidelines for reporting and benchmarking important FET parameters and performance metrics. We provide an example of this reporting and benchmarking process for a two-dimensional (2D) semiconductor FET. Our consensus will help promote an improved approach for assessing device performance in emerging FETs, thus aiding the field to progress more consistently and meaningfully.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Fully printed, all-carbon, recyclable electronics

The rapid growth of electronic waste must be curtailed to prevent accumulation of environmentally and biologically toxic materials, which are essential to traditional electronics. The recent proliferation of transient electronics has focused predominantly on biocompatibility, and studies reporting material recapture have only demonstrated reuse of conducting materials. Meanwhile, the ideal solution to the electronic waste epidemic-recapture and reuse of all materials-has been largely neglected. Here we show complete recyclability of all materials in printed, all-carbon electronics using paper substrates, semiconducting carbon nanotubes, conducting graphene, and insulating crystalline nanocellulose. The addition of mobile ions to the dielectric produced significant improvements in switching speed, subthreshold swing, and among the highest on-current for printed transistors. These devices evinced superlative stability over 6 months, after which they are shown to be controllably decomposed for complete recycling of materials and re-printing of devices with similar performance to baseline devices. The printing of all-carbon, recyclable electronics presents a new path toward green electronics with potential to mitigate the environmental impact of electronic waste. We anticipate all-carbon, recyclable electronics to be a watershed, facilitating internet-of-everything applications, such as ubiquitous sensors for continuous monitoring of diseases or environmental conditions, while preserving carbon neutrality in the device lifecycle.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

A Compact Virtual-Source Model for Carbon Nanotube Field-Effect Transistors in the Sub-10-nm Regime - Part II Extrinsic Elements, Performance Assessment, and Design Optimization

We present a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) including contact resistance, direct source-to-drain and band-to-band tunneling currents. The model captures the effects of dimensional scaling and performance degradations due to parasitic effects and is used to study the trade-offs between the drive current and leakage current of CNFETs according to the selection of CNT diameter, CNT density, contact length, and gate length for a target contacted gate pitch. We describe a co-optimization study of CNFET device parameters near the limits of scaling with physical insight, and project the CNFET performance at the 5-nm technology node with an estimated contacted gate pitch of 31 nm. Based on the analysis including parasitic resistance, capacitance, and tunneling leakage current, a CNT density of 180 CNTs/μm will enable CNFET technology to meet the ITRS target of drive current (1.33 mA/μm), which is within reach of modern experimental capabilities

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

A Compact Virtual-Source Model for Carbon Nanotube Field-Effect Transistors in the Sub-10-nm Regime-Part I Intrinsic Elements

We presents a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) based on the virtual-source (VS) approach, describing the intrinsic current-voltage and charge-voltage characteristics. The features of the model include: (i) carrier VS velocity extracted from experimental devices with gate lengths down to 15 nm; (ii) carrier effective mobility and velocity depending on the CNT diameter; (iii) short channel effect such as inverse subthreshold slope degradation and drain-induced barrier lowering depending on the device dimensions; (iv) small-signal capacitances including the CNT quantum capacitance effect to account for the decreasing gate capacitance at high gate bias. The CNFET model captures dimensional scaling effects and is suitable for technology benchmarking and performance projection at the sub-10-nm technology nodes.

0 citations0 reviewsNo code linkedOpen access