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Source author record

David P. Franke

David P. Franke appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.mes-hallquant-phphysics.ins-det

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Published work

8 published item(s)

preprint2016arXiv

Electron nuclear double resonance with donor-bound excitons in silicon

We present Auger-electron-detected magnetic resonance (AEDMR) experiments on phosphorus donors in silicon, where the selective optical generation of donor-bound excitons is used for the electrical detection of the electron spin state. Because of the long dephasing times of the electron spins in isotopically purified $^{28}$Si, weak microwave fields are sufficient, which allow to realize broadband AEDMR in a commercial ESR resonator. Implementing Auger-electron-detected ENDOR, we further demonstrate the optically-assisted control of the nuclear spin under conditions where the hyperfine splitting is not resolved in the optical spectrum. Compared to previous studies, this significantly relaxes the requirements on the sample and the experimental setup, e.g. with respect to strain, isotopic purity and temperature. We show AEDMR of phosphorus donors in silicon with natural isotope composition, and discuss the feasibility of ENDOR measurements also in this system.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Interaction of Strain and Nuclear Spins in Silicon: Quadrupolar Effects on Ionized Donors

The nuclear spins of ionized donors in silicon have become an interesting quantum resource due to their very long coherence times. Their perfect isolation, however, comes at a price, since the absence of the donor electron makes the nuclear spin difficult to control. We demonstrate that the quadrupolar interaction allows us to effectively tune the nuclear magnetic resonance of ionized arsenic donors in silicon via strain and determine the two nonzero elements of the S tensor linking strain and electric field gradients in this material to $S_{11}=1.5\times10^{22}$ V/m$^2$ and $S_{44}=6\times 10^{22}$ V/m$^2$. We find a stronger benefit of dynamical decoupling on the coherence properties of transitions subject to first-order quadrupole shifts than on those subject to only second-order shifts and discuss applications of quadrupole physics including mechanical driving of magnetic resonance, cooling of mechanical resonators, and strain-mediated spin coupling.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Quadrupolar Effects on Nuclear Spins of Neutral Arsenic Donors in Silicon

We present electrically detected electron nuclear double resonance measurements of the nuclear spins of ionized and neutral arsenic donors in strained silicon. In addition to a reduction of the hyperfine coupling, we find significant quadrupole interactions of the nuclear spin of the neutral donors of the order of 10 kHz. By comparing these to the quadrupole shifts due to crystal fields measured for the ionized donors, we identify the effect of the additional electron on the electric field gradient at the nucleus. This extra component is expected to be caused by the coupling to electric field gradients created due to changes in the electron wavefunction under strain.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

High cooperativity coupling between a phosphorus donor spin ensemble and a superconducting microwave resonator

We investigate the coupling of an ensemble of phosphorus donors in an isotopically purified $^{28}$Si host lattice interacting with a superconducting coplanar waveguide resonator. The microwave transmission spectrum of the resonator shows a normal mode splitting characteristic for high cooperativity. The evaluated collective coupling strength $g_{\mathrm{eff}}$ is of the same order as the loss rate of the spin system $γ$, indicating the onset of strong coupling. We develop a statistical model to describe the influence of temperature on the coupling strength from $50\,\mathrm{mK}$ to $3.5\,\mathrm{K}$ and find a scaling of the coupling strength with the square root of the number of thermally polarized spins.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin-dependent recombination at arsenic donors in ion-implanted silicon

Spin-dependent transport processes in thin near-surface doping regions created by low energy ion implantation of arsenic in silicon are detected by two methods, spin-dependent recombination (SDR) using microwave photoconductivity and electrically detected magnetic resonance (EDMR) monitoring the DC current through the sample. The high sensitivity of these techniques allows the observation of the magnetic resonance in particular of As in weak magnetic fields and at low resonance frequencies (40-1200 MHz), where high-field-forbidden transitions between the magnetic substates can be observed due to the mixing of electron and nuclear spin states. Several implantation-induced defects are present in the samples studied and act as spin readout partner. We explicitly demonstrate this by electrically detected electron double resonance experiments and identify a pair recombination of close pairs formed by As donors and oxygen-vacancy centers in an excited triplet state (SL1) as the dominant spin-dependent process in As-implanted Czochralski-grown Si.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin-dependent recombination involving oxygen-vacancy complexes in silicon

Spin-dependent relaxation and recombination processes in $γ$-irradiated $n$-type Czochralski-grown silicon are studied using continuous wave (cw) and pulsed electrically detected magnetic resonance (EDMR). Two processes involving the SL1 center, the neutral excited triplet state of the oxygen-vacancy complex, are observed which can be separated by their different dynamics. One of the processes is the relaxation of the excited SL1 state to the ground state of the oxygen-vacancy complex, the other a charge transfer between $^{31}$P donors and SL1 centers forming close pairs, as indicated by electrically detected electron double resonance. For both processes, the recombination dynamics are studied with pulsed EDMR techniques. We demonstrate the feasibility of true zero-field cw and pulsed EDMR for spin 1 systems and use this to measure the lifetimes of the different spin states of SL1 also at vanishing external magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin Selection Rule-Based Sub-Millisecond Hyperpolarization of Nuclear Spins in Silicon

In this work, we devise a fast and effective nuclear spin hyperpolarization scheme, which is in principle magnetic field and temperature independent. We use this scheme to experimentally demonstrate polarizations of up to 66% for phosphorus donor nuclear spins in bulk silicon, which are created within less than 100 us in a magnetic field of 0.35 T at a temperature of 5 K. The polarization scheme is based on a spin-dependent recombination process via weakly-coupled spin pairs, for which the recombination time constant strongly depends on the relative orientation of the two spins. We further use this scheme to measure the nuclear spin relaxation time and find a value of approx. 100 ms under illumination, in good agreement with the value calculated for nuclear spin flips induced by repeated ionization and deionization processes.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Time Constants of Spin-Dependent Recombination Processes

We present experiments to systematically study the time constants of spin-dependent recombination processes in semiconductors using pulsed electrically detected magnetic resonance (EDMR). The combination of time-programmed optical excitation and pulsed spin manipulation allows us to directly measure the recombination time constants of electrons via localized spin pairs and the time constant of spin pair formation as a function of the optical excitation intensity. Using electron nuclear double resonance, we show that the time constant of spin pair formation is determined by an electron capture process. Based on these time constants we devise a set of rate equations to calculate the current transient after a resonant microwave pulse and compare the results with experimental data. Finally, we critically discuss the effects of different boxcar integration time intervals typically used to analyze pulsed EDMR experiments on the determination of the time constants. The experiments are performed on phosphorus-doped silicon, where EDMR via spin pairs formed by phosphorus donors and Si/SiO2 interface dangling bond defects is detected.

0 citations0 reviewsNo code linkedOpen access