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Researcher profile

Felix Hoehne

Felix Hoehne contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.other

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Published work

7 published item(s)

preprint2014arXiv

Spin-dependent recombination involving oxygen-vacancy complexes in silicon

Spin-dependent relaxation and recombination processes in $γ$-irradiated $n$-type Czochralski-grown silicon are studied using continuous wave (cw) and pulsed electrically detected magnetic resonance (EDMR). Two processes involving the SL1 center, the neutral excited triplet state of the oxygen-vacancy complex, are observed which can be separated by their different dynamics. One of the processes is the relaxation of the excited SL1 state to the ground state of the oxygen-vacancy complex, the other a charge transfer between $^{31}$P donors and SL1 centers forming close pairs, as indicated by electrically detected electron double resonance. For both processes, the recombination dynamics are studied with pulsed EDMR techniques. We demonstrate the feasibility of true zero-field cw and pulsed EDMR for spin 1 systems and use this to measure the lifetimes of the different spin states of SL1 also at vanishing external magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin Selection Rule-Based Sub-Millisecond Hyperpolarization of Nuclear Spins in Silicon

In this work, we devise a fast and effective nuclear spin hyperpolarization scheme, which is in principle magnetic field and temperature independent. We use this scheme to experimentally demonstrate polarizations of up to 66% for phosphorus donor nuclear spins in bulk silicon, which are created within less than 100 us in a magnetic field of 0.35 T at a temperature of 5 K. The polarization scheme is based on a spin-dependent recombination process via weakly-coupled spin pairs, for which the recombination time constant strongly depends on the relative orientation of the two spins. We further use this scheme to measure the nuclear spin relaxation time and find a value of approx. 100 ms under illumination, in good agreement with the value calculated for nuclear spin flips induced by repeated ionization and deionization processes.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Nuclear Spin Dynamics of Ionized Phosphorus Donors in Silicon

We demonstrate the coherent control and electrical readout of the nuclear spins of ionized phosphorus donors in natural silicon. By combining pulsed illumination with coherent electron spin manipulation, we selectively ionize the donor depending on its nuclear spin state, exploiting a spin-dependent recombination process via a spin pair at the Si/SiO2 interface. The nuclear-spin coherence time of the ionized donor is 18 ms, two orders of magnitude longer than in the neutral donor state, rendering the ionized donor a potential resource as a quantum memory. The presented experimental techniques allow for spectroscopy of ionized-donor nuclear spins, increase the sensitivity of electrically detected electron nuclear double resonance by more than two orders of magnitude, and give experimental access to the lifetime of parallel electron spin pairs.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electrical detection of free induction decay and Hahn echoes in phosphorus doped silicon

Paramagnetic centers in a solid-state environment usually give rise to inhomogenously broadened electron paramagnetic resonance (EPR) lines, making conventionally detected free induction decay (FID) signals disappear within the spectrometer dead time. Here, experimental results of an electrically detected FID of phosphorus donors in silicon epilayers with natural isotope composition are presented, showing Ramsey fringes within the first 150 ns. An analytical model is developed to account for the data obtained as well as for the results of analogous two-pulse echo experiments. The results of a numerical calculation are further presented to assess the capability of the method to study spin-spin interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Lock-in detection for pulsed electrically detected magnetic resonance

We show that in pulsed electrically detected magnetic resonance (pEDMR) signal modulation in combination with a lock-in detection scheme can reduce the low-frequency noise level by one order of magnitude and in addition removes the microwave-induced non-resonant background. This is exemplarily demonstrated for spin-echo measurements in phosphorus-doped Silicon. The modulation of the signal is achieved by cycling the phase of the projection pulse used in pEDMR for the read-out of the spin state.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Electrical Detection of Coherent Nuclear Spin Oscillations in Phosphorus-Doped Silicon Using Pulsed ENDOR

We demonstrate the electrical detection of pulsed X-band Electron Nuclear Double Resonance (ENDOR) in phosphorus-doped silicon at 5\,K. A pulse sequence analogous to Davies ENDOR in conventional electron spin resonance is used to measure the nuclear spin transition frequencies of the $^{31}$P nuclear spins, where the $^{31}$P electron spins are detected electrically via spin-dependent transitions through Si/SiO$_2$ interface states, thus not relying on a polarization of the electron spin system. In addition, the electrical detection of coherent nuclear spin oscillations is shown, demonstrating the feasibility to electrically read out the spin states of possible nuclear spin qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Spin-Dependent Recombination between Phosphorus Donors in Silicon and Si/SiO2 Interface States Investigated with Pulsed Electrically Detected Electron Double Resonance

We investigate the spin species relevant for the spin-dependent recombination used for the electrical readout of coherent spin manipulation in phosphorus-doped silicon. Via a multi-frequency pump-probe experiment in pulsed electrically detected magnetic resonance, we demonstrate that the dominant spin-dependent recombination transition occurs between phosphorus donors and Si/SiO2 interface states. Combining pulses at different microwave frequencies allows us to selectively address the two spin subsystems participating in the recombination process and to coherently manipulate and detect the relative spin orientation of the two recombination partners.

0 citations0 reviewsNo code linkedOpen access