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Chih-Chieh Chen

Chih-Chieh Chen appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall

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Published work

5 published item(s)

preprint2016arXiv

A heat engine made of quantum dot molecules with high figure of merits

The transport of electrons through serially coupled quantum dot molecules (SCQDM) is investigated theoretically for application as an energy harvesting engine (EHE), which converts thermal heat to electrical power. We demonstrate that the charge current driven by a temperature bias shows bipolar oscillatory behavior with respect to gate voltage due to the unbalance between electrons and holes, which is different from the charge current driven by an applied bias. In addition, we reveal a Lenz's law between the charge current and the thermal induced voltage. The efficiency of EHE is higher for SCQDM in the orbital depletion situation rather than the orbital filling situation, owing to the many-body effect. The EHE efficiency is enhanced with increasing temperature bias, but suppressed as the electron hopping strength reduces. The fluctuation of QD energy levels at different sites also leads to a reduction of EHE efficiency. Finally, we demonstrate direction-dependent charge currents driven by the temperature bias for application as a novel charge diode.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Thermoelectric efficiency of quantum dot molecules at a high temperature bias: the role of thermal-induced voltage

The nonlinear electron and heat currents of quantum dot molecules (QDMs) under a temperature bias are theoretically investigated, including all correlation functions arising from electron Coulomb interactions in QDMs. Unlike the case of double QDs, the maximum efficiency of serially coupled triple QDs (SCTQD) occurs in the orbital depletion regime owing to the interdot Coulomb blockade. The electron current in SCTQD shows a bipolar oscillatory behavior with respect to the variation of QD energy levels, whereas the heat current does not show such a behavior. This is mainly attributed to thermal-induced bias. In addition, we illustrate how the efficiency of SCTQD is influenced by the external load resistance, and phonon heat flow. Finally, a direction-dependent electron current driven by a temperature bias has been demonstrated for a SCTQD with staircase-like energy levels.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Quantum interference and electron correlation in charge transport through triangular quantum dot molecules

We study the charge transport properties of triangular quantum dot molecule (TQDM) connected to metallic electrodes, taking into account all correlation functions and relevant charging states. The quantum interference (QI) effect of TQDM resulting from electron coherent tunneling between quantum dots is revealed and well interpreted by the long distance coherent tunneling mechanism. The spectra of electrical conductance of TQDM with charge filling from one to six electrons clearly depict the many-body and topological effects. The calculated charge stability diagram for conductance and total occupation numbers match well with the recent experimental measurements. We also demonstrate that the destructive QI effect on the tunneling current of TQDM is robust with respect to temperature variation, making the single electron QI transistor feasible at higher temperatures.

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preprint2015arXiv

Quantum interference and structure-dependent orbital-filling effects on the thermoelectric properties of quantum dot molecules

The quantum interference and orbital filling effects on the thermoelectric (TE) properties of quantum dot molecules with high figure of merit are illustrated via the full solution to the Hubbard- Anderson model in the Coulomb blockade regime. It is found that under certain condition in the triangular QD molecule (TQDM), destructive quantum interference (QI) can occur, which leads to vanishing small electrical conductance, while the Seebeck coefficient is modified dramatically. When TQDM is in the charge localization state due to QI, the Seebeck coefficient is seriously suppressed at low temperature, but highly enhanced at high temperature. Meanwhile, the behavior of Lorenz number reveals that it is easier to block charge transport via destructive QI than the electron heat transport at high temperatures. The maximum power factor (PF) in TQDM occurs at full-filling condition. Nevertheless, low-filling condition is preferred for getting maximum PF in serially coupled triple QDs in general. In double QDs, the maximum PF can be achieved either with orbital-depletion or orbital-filling as a result of electron-hole symmetry. Our theoretical work provides a useful guideline for advancing the nanoscale TE technology.

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preprint2015arXiv

Theoretical Studies of Graphene Nanoribbon Quantum Dot Qubits

Graphene nanoribbon quantum dot qubits have been proposed as promising candidates for quantum computing applications to overcome the spin-decoherence problems associated with typical semiconductor (e.g. GaAs) quantum dot qubits. We perform theoretical studies of the electronic structures of graphene nanoribbon quantum dots by solving the Dirac equation with appropriate boundary conditions. We then evaluate the exchange splitting based on an unrestricted Hartree-Fock method for the Dirac particles. The electronic wave function and long-range exchange coupling due to the Klein tunneling and the Coulomb interaction are calculated for various gate configurations. It is found that the exchange coupling between qubits can be significantly enhanced by the Klein tunneling effect. The implications of our results for practical qubit construction and operation are discussed.

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