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Researcher profile

David J. Srolovitz

David J. Srolovitz contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.stat-mech

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Published work

6 published item(s)

preprint2022arXiv

Disconnection-Mediated Twin/Twin-Junction Migration in FCC metals

We present the results of novel, time-resolved, in situ HRTEM observations, molecular dynamics (MD) simulations, and disconnection theory that elucidate the mechanism by which the motion of grain boundaries (GBs) in polycrystalline materials are coupled through disconnection motion/reactions at/adjacent to GB triple junctions (TJs). We focus on TJs composed of a pair of coherent twin boundaries (CTBs) and a Σ9 GB. As for all GBs, disconnection theory implies that multiple modes/local mechanisms for CTB migration are possible and that the mode selection is affected by the nature of the driving force for migration. While we observe (HRTEM and MD) CTB migration through the motion of pure steps driven by chemical potential jump, other experimental observations (and our simulations) show that stress-driven CTB migration occurs through the motion of disconnections with a non-zero Burgers vector; these are pure-step and twinning-partial CTB migration mechanisms. Our experimental observations and simulations demonstrate that the motion of a GB drags its delimiting TJ and may force the motion of the other GBs meeting at the TJ. Our experiments and simulations focus on two types of TJs composed of a pair of CTBs and a Σ9 GB; a 107° TJ readily migrates while a 70° TJ is immobile (experiment, simulation) in agreement with our disconnection theory even though the intrinsic mobilities of the constituent GBs do not depend on TJ-type. We also demonstrate that disconnections may be formed at TJs (chemical potential jump/stress driven) and at GB/free surface junctions (stress-driven).

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preprint2021arXiv

Disconnection-Mediated Migration of Interfaces in Microstructures: I. continuum model

A long-standing goal of materials science is to understand, predict and control the evolution of microstructures in crystalline materials. Most microstructure evolution is controlled by interface motion; hence, the establishment of rigorous interface equations of motion is a universal goal of materials science. We present a new model for the motion of arbitrarily curved interfaces that respects the underlying crystallography of the two phases/domains meeting at the interface and is consistent with microscopic mechanisms of interface motion; i.e., disconnection migration (line defects in the interface with step and dislocation character). We derive the equation of motion for interface migration under the influence of a wide range of driving forces. In Part II of this paper [Salvalaglio, Han and Srolovitz, 2021], we implement the interface model and the equation of motion proposed in this paper in a diffuse interface simulation approach for complex morphology and microstructure evolution.

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preprint2021arXiv

Disconnection-Mediated Migration of Interfaces in Microstructures: II. diffuse interface simulations

The motion of interfaces is an essential feature of microstructure evolution in crystalline materials. While atomic-scale descriptions provide mechanistic clarity, continuum descriptions are important for understanding microstructural evolution and upon which microscopic features it depends. We develop a microstructure evolution simulation approach that is linked to the underlying microscopic mechanisms of interface migration. We extend the continuum approach describing the disconnection-mediated motion of interfaces introduced in Part I [Han, Srolovitz and Salvalaglio, 2021] to a diffuse interface, phase-field model suitable for large-scale microstructure evolution. A broad range of numerical simulations showcases the capability of the method and the influence of microscopic interface migration mechanisms on microstructure evolution. These include, in particular, the effects of stress and its coupling to interface migration which arises from disconnections, showing how this leads to important differences from classical microstructure evolution represented by mean curvature flow.

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preprint2020arXiv

Distribution of Topological Types in Grain-Growth Microstructures

An open question in studying normal grain growth concerns the asymptotic state to which microstructures converge. In particular, the distribution of grain topologies is unknown. We introduce a thermodynamic-like theory to explain these distributions in two- and three-dimensional systems. In particular, a bending-like energy $E_i$ is associated to each grain topology $t_i$, and the probability of observing that particular topology is proportional to $\frac{1}{s(t_i)}e^{-βE_i}$, where $s(t_i)$ is the order of an associated symmetry group and $β$ is a thermodynamic-like constant. We explain the physical origins of this approach, and provide numerical evidence in support.

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preprint2020arXiv

Power-law scaling for solid-state dewetting of thin films: an Onsager variational approach

We examine the kinetics of surface diffusion-controlled, solid-state dewetting by consideration of the retraction of the contact in a semi-infinite solid thin film on a flat rigid substrate. The analysis is performed within the framework of the Onsager variational principle applied to surface diffusion-controlled morphology evolution. Based on this approach, we derive a simple, reduced-order model to quantitatively analyse the power-law scaling of the dewetting process. Using asymptotic analysis and numerical simulations for the reduced-order model, we find that the retraction distance grows as the $2/5$ power of time and the height of the ridge, adjacent to the contact, grows as the $1/5$ power of time for late time. While the asymptotic analysis focuses on late time and a relatively simple geometric model, the Onsager approach is applicable to all times and descriptions of the morphology of arbitrary complexity.

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preprint2011arXiv

Molecular dynamics simulation of Ga penetration along Al grain boundaries under a constant strain rate condition

While diverse fracture characteristics have been observed in liquid metal embrittlement (LME) depending on the solid-liquid metal pairs, the penetration of nanometer-thick liquid metal films along the grain boundary has been identified as one of the key mechanisms for embrittlement in many classical LME systems, such as Al-Ga, Cu-Bi and Ni-Bi. For example, liquid Ga quickly penetrates deep into grain boundaries in Al, leading to intergranular fracture under very small stresses. We report on a series of molecular dynamics simulations of liquid Ga in contact with an Al bicrystal under a constant strain rate. We identify the grain boundary dislocations that are nucleated at the grain boundary groove tip and climb down along the grain boundary during Ga penetration and characterize their atomic structures based on topological method.

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