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Researcher profile

Nathaniel Ng

Nathaniel Ng contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2013arXiv

Depletion layer-induced size effects in ferroelectric thin films: A Ginzburg-Landau model study

A Ginzburg-Landau model is used to demonstrate how depletion layers give rise to thickness-dependent ferroelectric properties in thin films. It is shown that free charge layers at the film-electrode interface can result in an internal electric field in the bulk of the film even when no external voltage is applied. At high values of the donor dopant density and small thicknesses, this internal electric field can be strong enough to lead to the formation of a domain pattern. This causes a drop in the remnant polarization; a direct demonstration of the important role free charge plays in thin ferroelectric films.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Manipulating Ferroelectric Domains in Nanostructures Under Electron Beams

Freestanding BaTiO3 nanodots exhibit domain structures characterized by distinct quadrants of ferroelastic 90° domains in transmission electron microscopy (TEM) observations. These differ significantly from flux-closure domain patterns in the same systems imaged by piezoresponse force microscopy. Based upon a series of phase field simulations of BaTiO3 nanodots, we suggest that the TEM patterns result from a radial electric field arising from electron beam charging of the nanodot. For sufficiently large charging, this converts flux-closure domain patterns to quadrant patterns with radial net polarizations. Not only does this explain the puzzling patterns that have been observed in TEM studies of ferroelectric nanodots, but also suggests how to manipulate ferroelectric domain patterns via electron beams.

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preprint2008arXiv

Lateral Size and Thickness Dependence in Ferroelectric Nanostructures Formed by Localized Domain Switching

Ferroelectric nanostructures can be formed by local switching of domains using techniques such as piezo-force microscopy (PFM). Understanding lateral size effects is important to determine the minimum feature size for writing ferroelectric nanostructures. To understand these lateral size effects, we use the time-dependent-Ginzburg-Landau equations to simulate localized switching of domains for a PFM type and parallel-plate capacitor configurations. Our investigations indicate that fringing electric fields lead to switching via 90 deg domain wedge nucleation for thicker films while at smaller thicknesses, the polarization switches directly by 180 deg rotations. The voltage required to switch the domain increases by decreasing the lateral size and at very small lateral sizes the coercive voltage becomes so large that it becomes virtually impossible to switch the domain. In all cases, the width of the switched region extends beyond the electrodes, due to fringing.

0 citations0 reviewsNo code linkedOpen access