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Dariusz Sztenkiel

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4 publications

preprint2022arXiv

Spin orbital reorientation transitions induced by magnetic field

Here we report on a new effect similar to the spin reorientation transition (SRT) that takes place at two magnetic fields of BSORT1B_{SORT1} and BSORT2B_{SORT2}. The effect is observed in the magnetization curves of small Mn3+^{3+} magnetic clusters in the wurtzite GaN (being in a paramagnetic state) calculated using crystal field model approach. The obtained results suggest that the computed magnetic anisotropy (MA) reverses its sign on increasing BB across BSORTB_{SORT}. Detailed analysis show however that MA is unchanged for high magnetic fields. We show that the observed effect arises from the interplay of the crystalline environment and the spin-orbit coupling λS^L^λ\hat{\textbf{S}} \hat{\textbf{L}}, therefore we name it spin orbital reorientation transition (SORT). The value of BSORT1B_{SORT1} depends on the crystal field model parameters and the number of ions NN in a given cluster, whereas BSORT2B_{SORT2} is controlled mostly by the magnitude of the spin-orbit coupling λλ. The explanation of SORT is given in terms of the spin MSM_S and orbital momentum MLM_L contributions to the total magnetization M=MS+MLM = M_S + M_L. The similar effect should also be present in other materials with not completely quenched (non zero) orbital angular momentum LL, a uniaxial magnetic anisotropy and the positive value of λλ.

preprint2013arXiv

Manipulating Mn--Mgk_k cation complexes to control the charge- and spin-state of Mn in GaN

Owing to the variety of possible charge and spin states and to the different ways of coupling to the environment, paramagnetic centres in wide band-gap semiconductors and insulators exhibit a strikingly rich spectrum of properties and functionalities, exploited in commercial light emitters and proposed for applications in quantum information. Here we demonstrate, by combining synchrotron techniques with magnetic, optical and \emph{ab initio} studies, that the codoping of GaN:Mn with Mg allows to control the Mnn+^{n+} charge and spin state in the range 3≤n≤53\le n\le 5 and 2≥S≥12\ge S\ge 1. According to our results, this outstanding degree of tunability arises from the formation of hitherto concealed cation complexes Mn-Mgk_k, where the number of ligands kk is pre-defined by fabrication conditions. The properties of these complexes allow to extend towards the infrared the already remarkable optical capabilities of nitrides, open to solotronics functionalities, and generally represent a fresh perspective for magnetic semiconductors.

preprint2011arXiv

Reconciling results of tunnelling experiments on (Ga,Mn)As

A theoretical model is presented which allows to reconcile findings of scanning tunnelling spectroscopy for (Ga,Mn)As [Richardella et al. Science 327, 66 (2010)] with results for tunneling across (Ga,Mn)As thin layers [Ohya et al. Nature Phys. 7, 342 (2011); Phys. Rev. Lett. 104, 167204 (2010)]. According to the proposed model, supported by a self-consistent solution of the Poisson and Schroedinger equations, a nonmonotonic behaviour of differential tunnel conductance as a function of bias is associated with the appearance of two-dimensional hole subbands rather in the GaAs:Be electrode than in the (Ga,Mn)As layer.

preprint2011arXiv

Structural and paramagnetic properties of dilute Ga1-xMnxN

Systematic investigations of the structural and magnetic properties of single crystal (Ga,Mn)N films grown by metal organic vapor phase epitaxy are presented. High resolution transmission electron microscopy, synchrotron x-ray diffraction, and extended x-ray absorption fine structure studies do not reveal any crystallographic phase separation and indicate that Mn occupies Ga-substitutional sites in the Mn concentration range up to 1%. The magnetic properties as a function of temperature, magnetic field and its orientation with respect to the c-axis of the wurtzite structure can be quantitatively described by the paramagnetic theory of an ensemble of non-interacting Mn3+^{3+} ions in the relevant crystal field, a conclusion consistent with the x-ray absorption near edge structure analysis. A negligible contribution of Mn in the 2+ charge state points to a low concentration of residual donors in the studied films. Studies on modulation doped p-type (Ga,Mn)N/(Ga,Al)N:Mg heterostructures do not reproduce the high temperature robust ferromagnetism reported recently for this system.

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