Source author record

Dario Gnani

Dario Gnani appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

physics.ins-det hep-ex

Catalog footprint

What is connected

3works

2topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2020arXiv

Cryogenic Characterization of 180 nm CMOS Technology at 100 mK

Conventional CMOS technology operated at cryogenic conditions has recently attracted interest for its uses in low-noise electronics. We present one of the first characterizations of 180 nm CMOS technology at a temperature of 100 mK, extracting I/V characteristics, threshold voltages, and transconductance values, as well as observing their temperature dependence. We find that CMOS devices remain fully operational down to these temperatures, although we observe hysteresis effects in some devices. The measurements described in this paper can be used to inform the future design of CMOS devices intended to be operated in this deep cryogenic regime.

preprint2020arXiv

Measured Effectiveness of Deep N-well Substrate Isolation in a 65nm Pixel Readout Chip Prototype

The same charge sensitive preamplifier and discriminator circuit with different isolation strategies has been tested to compare the isolation of both analog and digital circuits from the substrate of a 65nm bulk CMOS process to the isolation of only digital circuits, tying analog ground locally to the substrate. This study will show that the circuit with analog on the substrate and digital in deep N-well has better noise isolation between analog and digital.

preprint2010arXiv

Characterisation of a CMOS Active Pixel Sensor for use in the TEAM Microscope

A 1M- and a 4M-pixel monolithic CMOS active pixel sensor with 9.5x9.5 micron^2 pixels have been developed for direct imaging in transmission electron microscopy as part of the TEAM project. We present the design and a full characterisation of the detector. Data collected with electron beams at various energies of interest in electron microscopy are used to determine the detector response. Data are compared to predictions of simulation. The line spread function measured with 80 keV and 300 keV electrons is (12.1+/-0.7) micron and (7.4+/-0.6) micron, respectively, in good agreement with our simulation. We measure the detection quantum efficiency to be 0.78+/-0.04 at 80 keV and 0.74+/-0.03 at 300 keV. Using a new imaging technique, based on single electron reconstruction, the line spread function for 80 keV and 300 keV electrons becomes (6.7+/-0.3) micron and (2.4+/-0.2) micron, respectively. The radiation tolerance of the pixels has been tested up to 5 Mrad and the detector is still functional with a decrease of dynamic range by ~30%, corresponding to a reduction in full-well depth from ~39 to ~27 primary 300 keV electrons, due to leakage current increase, but identical line spread function performance.