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Carl Grace

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physics.ins-det hep-ex nucl-ex physics.soc-ph

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preprint2022arXiv

Big Industry Engagement to Benefit HEP: Microelectronics Support from Large CAD Companies

Microelectronics development is critical to a wide number of DOE projects and mission space. Creating Helpful Incentives to Produce Semiconductors (CHIPS) and manufacturing Application Specific Integrated Circuits (ASIC) are important to DOE, so the infrastructure that allows DOE to carry out its mission needs to exist. This paper discusses the current initiatives and recommends a business model to build an ecosystem for microelectronics design for DOE which includes three main building blocks: the Computer Aided Design (CAD) - Electronic Design Automation (EDA) design tools, basic design IPs, and access to semiconductor fabrication facilities.

preprint2022arXiv

Monolithic Active Pixel Sensors on CMOS technologies

Collider detectors have taken advantage of the resolution and accuracy of silicon detectors for at least four decades. Future colliders will need large areas of silicon sensors for low mass trackers and sampling calorimetry. Monolithic Active Pixel Sensors (MAPS), in which Si diodes and readout circuitry are combined in the same pixels, and can be fabricated in some of standard CMOS processes, are a promising technology for high-granularity and light detectors. In this paper we review 1) the requirements on MAPS for trackers and electromagnetic calorimeters (ECal) at future colliders experiments, 2) the ongoing efforts towards dedicated MAPS for the Electron-Ion Collider (EIC) at BNL, for which the EIC Silicon Consortium was already instantiated, and 3) space-born applications for MeV $γ$-ray experiments with MAPS based trackers (AstroPix).

preprint2020arXiv

Cryogenic Characterization of 180 nm CMOS Technology at 100 mK

Conventional CMOS technology operated at cryogenic conditions has recently attracted interest for its uses in low-noise electronics. We present one of the first characterizations of 180 nm CMOS technology at a temperature of 100 mK, extracting I/V characteristics, threshold voltages, and transconductance values, as well as observing their temperature dependence. We find that CMOS devices remain fully operational down to these temperatures, although we observe hysteresis effects in some devices. The measurements described in this paper can be used to inform the future design of CMOS devices intended to be operated in this deep cryogenic regime.