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Daniele Ielmini

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6 published item(s)

preprint2022arXiv

2022 Roadmap on Neuromorphic Computing and Engineering

Modern computation based on the von Neumann architecture is today a mature cutting-edge science. In the Von Neumann architecture, processing and memory units are implemented as separate blocks interchanging data intensively and continuously. This data transfer is responsible for a large part of the power consumption. The next generation computer technology is expected to solve problems at the exascale with 1018 calculations each second. Even though these future computers will be incredibly powerful, if they are based on von Neumann type architectures, they will consume between 20 and 30 megawatts of power and will not have intrinsic physically built-in capabilities to learn or deal with complex data as our brain does. These needs can be addressed by neuromorphic computing systems which are inspired by the biological concepts of the human brain. This new generation of computers has the potential to be used for the storage and processing of large amounts of digital information with much lower power consumption than conventional processors. Among their potential future applications, an important niche is moving the control from data centers to edge devices. The aim of this Roadmap is to present a snapshot of the present state of neuromorphic technology and provide an opinion on the challenges and opportunities that the future holds in the major areas of neuromorphic technology, namely materials, devices, neuromorphic circuits, neuromorphic algorithms, applications, and ethics. The Roadmap is a collection of perspectives where leading researchers in the neuromorphic community provide their own view about the current state and the future challenges. We hope that this Roadmap will be a useful resource to readers outside this field, for those who are just entering the field, and for those who are well established in the neuromorphic community. https://doi.org/10.1088/2634-4386/ac4a83

preprint2022arXiv

Tutorial: Analog Matrix Computing (AMC) with Crosspoint Resistive Memory Arrays

Matrix computation is ubiquitous in modern scientific and engineering fields. Due to the high computational complexity in conventional digital computers, matrix computation represents a heavy workload in many data-intensive applications, e.g., machine learning, scientific computing, and wireless communications. For fast, efficient matrix computations, analog computing with resistive memory arrays has been proven to be a promising solution. In this Tutorial, we present analog matrix computing (AMC) circuits based on crosspoint resistive memory arrays. AMC circuits are able to carry out basic matrix computations, including matrix multiplication, matrix inversion, pseudoinverse and eigenvector computation, all with one single operation. We describe the main design principles of the AMC circuits, such as local/global or negative/positive feedback configurations, with/without external inputs. Mapping strategies for matrices containing negative values will be presented. The underlying requirements for circuit stability will be described via the transfer function analysis, which also defines time complexity of the circuits towards steady-state results. Lastly, typical applications, challenges, and future trends of AMC circuits will be discussed.

preprint2020arXiv

In-memory eigenvector computation in time O(1)

In-memory computing with crosspoint resistive memory arrays has gained enormous attention to accelerate the matrix-vector multiplication in the computation of data-centric applications. By combining a crosspoint array and feedback amplifiers, it is possible to compute matrix eigenvectors in one step without algorithmic iterations. In this work, time complexity of the eigenvector computation is investigated, based on the feedback analysis of the crosspoint circuit. The results show that the computing time of the circuit is determined by the mismatch degree of the eigenvalues implemented in the circuit, which controls the rising speed of output voltages. For a dataset of random matrices, the time for computing the dominant eigenvector in the circuit is constant for various matrix sizes, namely the time complexity is O(1). The O(1) time complexity is also supported by simulations of PageRank of real-world datasets. This work paves the way for fast, energy-efficient accelerators for eigenvector computation in a wide range of practical applications.

preprint2020arXiv

One-step regression and classification with crosspoint resistive memory arrays

Machine learning has been getting a large attention in the recent years, as a tool to process big data generated by ubiquitous sensors in our daily life. High speed, low energy computing machines are in demand to enable real-time artificial intelligence at the edge, i.e., without the support of a remote frame server in the cloud. Such requirements challenge the complementary metal-oxide-semiconductor (CMOS) technology, which is limited by the Moore's law approaching its end and the communication bottleneck in conventional computing architecture. Novel computing concepts, architectures and devices are thus strongly needed to accelerate data-intensive applications. Here we show a crosspoint resistive memory circuit with feedback configuration can execute linear regression and logistic regression in just one step by computing the pseudoinverse matrix of the data within the memory. The most elementary learning operation, that is the regression of a sequence of data and the classification of a set of data, can thus be executed in one single computational step by the novel technology. One-step learning is further supported by simulations of the prediction of the cost of a house in Boston and the training of a 2-layer neural network for MNIST digit recognition. The results are all obtained in one computational step, thanks to the physical, parallel, and analog computing within the crosspoint array.

preprint2020arXiv

Time complexity of in-memory solution of linear systems

In-memory computing with crosspoint resistive memory arrays has been shown to accelerate data-centric computations such as the training and inference of deep neural networks, thanks to the high parallelism endowed by physical rules in the electrical circuits. By connecting crosspoint arrays with negative feedback amplifiers, it is possible to solve linear algebraic problems such as linear systems and matrix eigenvectors in just one step. Based on the theory of feedback circuits, we study the dynamics of the solution of linear systems within a memory array, showing that the time complexity of the solution is free of any direct dependence on the problem size N, rather it is governed by the minimal eigenvalue of an associated matrix of the coefficient matrix. We show that, when the linear system is modeled by a covariance matrix, the time complexity is O(logN) or O(1). In the case of sparse positive-definite linear systems, the time complexity is solely determined by the minimal eigenvalue of the coefficient matrix. These results demonstrate the high speed of the circuit for solving linear systems in a wide range of applications, thus supporting in-memory computing as a strong candidate for future big data and machine learning accelerators.

preprint2012arXiv

Hot-carrier trap-limited transport in switching chalcogenides

Chalcogenide materials have received great attention in the last decade owing to their application in new memory systems. Recently, phase-change memories have, in fact, reached the early stages of production. In spite of the industrial exploitation of such materials, the physical processes governing the switching mechanism are still debated. In this paper we work out a complete and consistent model for transport in amorphous chalcogenide materials based on trap-limited conduction accompanied by carrier heating. A previous model is here extended to include position-dependent carrier concentration and field, consistently linked by the Poisson equation. The results of the new model reproduce the experimental electrical characteristics and their dependences on the device length and temperature. Furthermore, the model provides a sound physical interpretation of the switching phenomenon and is able to give an estimate of the threshold condition in terms of the material parameters, a piece of information of great technological interest.