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Alan D. Bristow

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Published work

12 published item(s)

preprint2022arXiv

Structure-Property-Performance Relationships of Cuprous Oxide Nanostructures for Dielectric Mie Resonance-Enhanced Photocatalysis

Nanostructured metal oxides, such as Cu2O, CeO2, α-Fe2O3, and TiO2 can efficiently mediate photocatalysis for solar-to-chemical energy conversion and pollution remediation. In this contribution, we report a novel approach, dielectric Mie resonance-enhanced photocatalysis, to enhance the catalytic activity of metal oxide photocatalysts. Specifically, we demonstrate that Cu2O nanostructures exhibiting dielectric Mie resonances can exhibit up to an order of magnitude higher photocatalytic rate as compared to Cu2O nanostructures not exhibiting dielectric Mie resonances. Our finite-difference time-domain (FDTD) simulation and experimental results predict a volcano-type relationship between the photocatalytic rate and the size of Cu2O nanospheres and nanocubes. Using transient absorption measurements, we reveal that a coherent electronic process associated with dielectric Mie resonance-mediated charge carrier generation is dominant in Cu2O nanostructures that exhibit higher photocatalytic rates. Although we experimentally demonstrate dielectric Mie resonance-enhanced photocatalysis using Cu2O particles here, based on our FDTD simulations, we anticipate the same can be achieved with other metal oxide photocatalysts, including CeO2, α-Fe2O3, and TiO2.

preprint2020arXiv

Carrier transport and electron-lattice interactions of nonlinear optical crystals CdGeP$_2$, ZnGeP$_2$ and CdSiP$_2$

Terahertz time-domain spectroscopy is employed to investigate temperature-dependent properties of bulk chalcopyrite crystals (CdGeP$_2$, ZnGeP$_2$ and CdSiP$_2$). The complex spectra provide the refraction and absorption as a function of temperature, from which electron-phonon coupling and average phonon energies are extracted and linked to the mechanics of the A- and B-site cations. Also, AC conductivity spectra provide carrier densities and electron scattering times, the temperature dependence of which is associated with unintentional shallow dopants. Temperature dependence of the scattering time is converted into carrier mobility and modeled with microscopic transport mechanisms such as polar optical phonon, acoustic phonons, deformation potential, ionized impurity and dislocation scattering. Hence, analysis links the THz optical and electronic properties to relate microscopic carrier transport and carrier-lattice interactions.

preprint2016arXiv

Role of Strain on the Coherent Properties of GaAs Excitons and Biexcitons

Polarization-dependent two-dimensional Fourier-transform spectroscopy (2DFTS) is performed on excitons in strained bulk GaAs layers probing the coherent response for differing amounts of strain. Biaxial tensile strain lifts the degeneracy of heavy-hole (HH) and light-hole (LH) valence states, leading to an observed splitting of the associated excitons at low temperature. Increasing the strain increases the magnitude of the HH/LH exciton peak splitting, induces an asymmetry in the off-diagonal coherences, increases the difference in the HH and LH exciton homogenous linewidths, and increases the inhomogeneous broadening of both exciton species. All results arise from strain-induced variations in the local electronic environment, which is not uniform along the growth direction of the thin layers. For cross-linear polarized excitation, wherein excitonic signals give way to biexcitonic signals, the high-strain sample shows evidence of bound LH, HH, and mixed biexcitons.

preprint2015arXiv

Multidimensional Coherent Spectroscopy of a Semiconductor Microcavity

Rephasing and non-rephasing two-dimensional coherent spectra map the anti-crossing associated with normal-mode splitting in a semiconductor microcavity. For a 12-meV detuning range near zero detuning, it is observed that there are two diagonal features related to the intra-action of exciton-polariton branches and two off-diagonal features related to coherent interaction between the polaritons. At negative detuning, the lineshape properties of the diagonal intra-action features are distinguishable and can be associated with cavity-like and exciton-like modes. A biexcitonic companion feature is observed, shifted from the exciton feature by the biexciton binding energy. Closer to zero detuning, all features are enhanced and the diagonal intra-action features become nearly equal in amplitude and linewidth. At positive detuning the exciton- and cavity-like characteristics return to the diagonal intra-action features. Off-diagonal interaction features exhibit asymmetry in their amplitudes throughout the detuning range. The amplitudes are strongly modulated (and invert) at small positive detuning, as the lower polariton branch crosses the bound biexciton energy determined from negative detuning spectra.

preprint2015arXiv

Preparation, characterization, and electrical properties of epitaxial NbO2 thin film lateral devices

Epitaxial NbO2 (110) films, 20 nm thick, were grown by pulsed laser deposition on Al2O3 (0001) substrates. The Ar/O2 total pressure during growth was varied to demonstrate the gradual transformation between NbO2 and Nb2O5 phases, which was verified using x-ray diffraction, x-ray photoelectron spectroscopy, and optical absorption measurements. Electric resistance threshold switching characteristics were studied in a lateral geometry using interdigitated Pt top electrodes in order to preserve the epitaxial crystalline quality of the films. Volatile and reversible transitions between high and low resistance states were observed in epitaxial NbO2 films, while irreversible transitions were found in case of Nb2O5 phase. Electric field pulsed current measurements confirmed thermally-induced threshold switching.

preprint2014arXiv

Terahertz emission from ZnGeP2: Phase-matching, intensity and length scalability

Collinear phase-matched optical rectification is studied in ZnGeP$_{2}$ pumped with near-infrared light. The pump-intensity dependence is presented for three crystal lengths (0.3, 1.0 and 3.0 mm) to determine the effects of linear optical absorption, nonlinear optical absorption and terahertz free-carrier absorption on the generation. Critical parameters such as the coherence length (for velocity matching), dispersion length (for linear pulse broadening) and nonlinear length (for self-phase modulation) are determined for this material. These parameters provide insight into the upper limit of pulse intensity and crystal length required to generate intense terahertz pulse without detriment to the pulse shape. It is found that for 1-mm thick ZnGeP$_{2}$(012), pumped at 1.28 micron with intensity of ~15 GW/cm2 will produce intense undistorted pulses, whereas longer crystals or larger intensities modify the pulse shape to varying degrees. Moreover, phase-matching dispersion maps are presented for the terahertz generation over a large tuning range (1.1-2.4 micron) in longer (3 mm) crystal, demonstrating the phase-matching bandwidth and phase mismatch that leads to fringing associated with multi-pulse interference. All observed results are simulated numerically showing good qualitative agreement.

preprint2013arXiv

Terahertz Waveguiding in Silicon-Core Fibers

We propose the use of a silicon-core optical fiber for terahertz (THz) waveguide applications. Finite-difference time-domain simulations have been performed based on a cylindrical waveguide with a silicon core and silica cladding. High-resistivity silicon has a flat dispersion over a 0.1 - 3 THz range, making it viable for propagation of tunable narrowband CW THz and possibly broadband picosecond pules of THz radiation. Simulations show the propagation dynamics and the integrated intensity, from which transverse mode profiles and absorption lengths are extraced. It is found that for 140 - 250 micron core diameters the mode is primarily confined to the core, such that the overall absorbance is only slightly less than in bulk polycrystalline silicon.

preprint2012arXiv

Effect of Monolayer Thickness Fluctuations on Coherent Exciton Coupling in Single Quantum Wells

Monolayer fluctuations in the thickness of a semiconductor quantum well (QW) lead to three types of excitons, located in the narrower, average and thicker regions of the QW, which are clearly resolved in optical spectra. Whether or not these excitons are coherently coupled via Coulomb interactions is a long-standing debate. We demonstrate that different types of disorder in QWs distinctly affects the coherent coupling and that the coupling strength can be quantitatively measured using optical two-dimensional Fourier transform spectroscopy. We prove experimentally and theoretically that in narrow quantum wells the coherent coupling occurs predominantly between excitons residing in the disorder-free areas of the QWs and those residing in the plateau-type disorder. In contrast, excitons localized in the fault-type disorder potentials do not coherently couple to other excitons.

preprint2011arXiv

All-optical retrieval of the global phase for two-dimensional Fourier-transform spectroscopy

A combination of spatial interference patterns and spectral interferometry are used to find the global phase for non-collinear two-dimensional Fourier-transform (2DFT) spectra. Results are compared with those using the spectrally resolved transient absorption (STRA) method to find the global phase when excitation is with co-linear polarization. Additionally cross-linear polarized 2DFT spectra are correctly phased using the all-optical technique, where the SRTA is not applicable.

preprint2011arXiv

Polarization dependence of semiconductor exciton and biexciton contributions to phase-resolved optical two-dimensional Fourier-transform spectra

We study the coherent light-matter interactions of GaAs quantum wells associated with excitons, biexcitons and many-body effects. For most polarization configurations, excitonic features dominate the phase-resolved two-dimensional Fourier-transform (2DFT) spectra and have dispersive lineshapes, indicating the presence of many-body interactions. For cross-linear excitation, excitonic features become weak and absorptive due to the strong suppression of many-body effects; a result that can not be directly determined in transient four-wave mixing experiments. The biexcitonic features do not weaken for cross-polarized excitation and thus are more important.

preprint2011arXiv

Two-dimensional double-quantum spectra reveal collective resonances in an atomic vapor

We report the observation of double-quantum coherence signals in a gas of potassium atoms at twice the frequency of the one-quantum coherences. Since a single atom does not have a state at the corresponding energy, this observation must be attributed to a collective resonance involving multiple atoms. These resonances are induced by weak inter-atomic dipole-dipole interactions, which means that the atoms cannot be treated in isolation, even at a low density of $10^{12}$ cm$^{-3}$.

preprint2009arXiv

Many-body two-quantum coherences in semiconductor nanostructures

We present experimental coherent two-dimensional Fourier transform spectra of the exciton resonances in semiconductor quantum wells for a pulse sequence that isolates two-quantum coherences. By measuring the real part of the spectra, we can determine that the spectra are dominated by two quantum coherences due to many-body interactions, not bound biexcitons. Simulations performed using dynamics controlled truncation agree well with the experiments.