Researcher profile

Daniel F. Urban

Daniel F. Urban contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
6works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

6 published item(s)

preprint2022arXiv

Electrostatic treatment of charged interfaces in classical atomistic simulations

Artificial electrostatic potentials can be present in supercells constructed for atomistic simulations of surfaces and interfaces in ionic crystals. Treating the ions as point charges, we systematically derive an electrostatic formalism for model systems of increasing complexity, both neutral and charged, and with either open or periodic boundary conditions. This allows to correctly interpret results of classical atomistic simulations which are directly affected by the appearance of these potentials. We demonstrate our approach at the example of a strontium titanite (SrTiO$_3$) supercell containing an asymmetric tilt grain boundary. The formation energies of charged oxygen vacancies and the relaxed interface structure are calculated based on an interatomic rigid-ion potential, and the results are analyzed in consideration of the electrostatic effects.

preprint2022arXiv

Influence of (N,H)-terminated surfaces on stability, hyperfine structure, and zero-field splitting of NV centers in diamond

We present a density functional theory analysis of the negatively charged nitrogen-vacancy (NV$^-$) defect complex in diamond located in the vicinity of (111)- or (100)-oriented surfaces with mixed (N,H)-terminations. We assess the stability and electronic properties of the NV$^-$ center and study their dependence on the H:N ratio of the surface termination. The formation energy, the electronic density of states, the hyperfine structure and zero-field splitting parameters of an NV$^-$ center are analyzed as function of its distance and orientation to the surface. We find stable NV$^-$ centers with bulk-like properties at distances of at least $\sim8$ Angstroem from the surface provided that the surface termination consists of at least 25\% substitutional nitrogen atoms. Our results indicate that axial NV centers near a flat 100\% N-terminated (111) surface are the optimal choice for NV-based quantum sensing applications as they are the least influenced by the proximity of the surface.

preprint2021arXiv

Defects and Phase Formation in Non-Stoichiometric LaFeO$_3$: a Combined Theoretical and Experimental Study

The defect chemistry of perovskite compounds is directly related to the stoichiometry and to the valence states of the transition-metal ions. Defect engineering has become increasingly popular as it offers the possibility to influence the catalytic properties of perovskites for applications in energy storage and conversion devices such as solid-oxide fuel- and electrolyzer cells. LaFeO$_3$ (LFO) can be regarded as a base compound of the family of catalytically active perovskites La$_{1-x}$A$_x$Fe$_{1-y}$B$_y$O$_{3-δ}$, for which the defect chemistry as well as the electronic and ionic conductivity can be tuned by substitution on cationic sites. Combining theoretical and experimental approaches, we explore the suitability for A-site vacancy engineering, namely the feasibility of actively manipulating the valence state of Fe and the concentration of point defects by synthesizing La-deficient LFO. Formation energies and concentrations of point defects were determined as a function of processing conditions by first-principles DFT+U calculations. Based on the results, significant compositional deviations from stoichiometric LFO cannot be expected by providing rich or poor conditions of the oxidic precursor compounds (Fe$_2$O$_3$ and La$_2$O$_3$) in a solid-state processing route. In the experimental part, LFO was synthesized with a targeted La-site deficiency. We analyze the resulting phases by X-ray diffraction and scanning electron microscopy, (scanning) transmission electron microscopy in combination with energy-dispersive X-ray spectroscopy, and electron energy-loss spectrometry. Instead of a variation of the La/Fe ratio, a mixture of the two phases Fe$_2$O$_3$ and LFO was observed, resulting in an invariant charge state of Fe, in line with the theoretical results. We discuss our findings with respect to partly differing assumptions made in previous studies on this material system.

preprint2020arXiv

Influence of extended defects on the formation energy, the hyperfine structure, and the zero-field splitting of NV centers in diamond

We present a density functional theory analysis of nitrogen-vacancy (NV) centers in diamond which are located in the vicinity of extended defects, namely intrinsic stacking faults (ISF), extrinsic stacking faults (ESF), and coherent twin boundaries (CTB) on \{111\} planes in diamond crystals. Several sites for NV centers close to the extended defects are energetically preferred with respect to the bulk crystal. This indicates that NV centers may be enriched at extended defects. We report the hyperfine structure (HFS) and zero-field splitting (ZFS) parameters of the NV centers at the extended defects which typically deviate by about 10\% but in some cases up to 90\% from their bulk values. Furthermore, we find that the influence of the extended defects on the NV centers is of short range: NV centers that are about three double layers (corresponding to $\sim6$ $\mathring{A}$ away from defect planes already show bulk-like behavior.

preprint2012arXiv

Finite frequency noise properties of the non-equilibrium Anderson impurity model

We analyze the spectrum of the electric-current autocorrelation function (noise power) in the Anderson impurity model biased by a finite transport voltage. Special emphasis is placed on the interplay of non-equilibrium effects and electron-electron interactions. Analytic results are presented for a perturbation expansion in the interaction strength $U$. Compared to the non-interacting setup we find a suppression of noise for finite frequencies in equilibrium and an amplification in non-equilibrium. Furthermore, we use a diagrammatic resummation scheme to obtain non-perturbative results in the regime of intermediate $U$. At finite voltage, the noise spectrum shows sharp peaks at positions related to the Kondo temperature instead of the voltage.

preprint2012arXiv

Rashba spin-orbit-interaction-based quantum pump in graphene

We present a proposal for an adiabatic quantum pump based on a graphene monolayer patterned by electrostatic gates and operated in the low-energy Dirac regime. The setup under investigation works in the presence of inhomogeneous spin-orbit interactions of intrinsic- and Rashba-type and allows to generate spin polarized coherent current. A local spin polarized current is induced by the pumping mechanism assisted by the spin-double refraction phenomenon.