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Researcher profile

Christian Elsässer

Christian Elsässer contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

5 published item(s)

preprint2022arXiv

Electrostatic treatment of charged interfaces in classical atomistic simulations

Artificial electrostatic potentials can be present in supercells constructed for atomistic simulations of surfaces and interfaces in ionic crystals. Treating the ions as point charges, we systematically derive an electrostatic formalism for model systems of increasing complexity, both neutral and charged, and with either open or periodic boundary conditions. This allows to correctly interpret results of classical atomistic simulations which are directly affected by the appearance of these potentials. We demonstrate our approach at the example of a strontium titanite (SrTiO$_3$) supercell containing an asymmetric tilt grain boundary. The formation energies of charged oxygen vacancies and the relaxed interface structure are calculated based on an interatomic rigid-ion potential, and the results are analyzed in consideration of the electrostatic effects.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Influence of (N,H)-terminated surfaces on stability, hyperfine structure, and zero-field splitting of NV centers in diamond

We present a density functional theory analysis of the negatively charged nitrogen-vacancy (NV$^-$) defect complex in diamond located in the vicinity of (111)- or (100)-oriented surfaces with mixed (N,H)-terminations. We assess the stability and electronic properties of the NV$^-$ center and study their dependence on the H:N ratio of the surface termination. The formation energy, the electronic density of states, the hyperfine structure and zero-field splitting parameters of an NV$^-$ center are analyzed as function of its distance and orientation to the surface. We find stable NV$^-$ centers with bulk-like properties at distances of at least $\sim8$ Angstroem from the surface provided that the surface termination consists of at least 25\% substitutional nitrogen atoms. Our results indicate that axial NV centers near a flat 100\% N-terminated (111) surface are the optimal choice for NV-based quantum sensing applications as they are the least influenced by the proximity of the surface.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Defects and Phase Formation in Non-Stoichiometric LaFeO$_3$: a Combined Theoretical and Experimental Study

The defect chemistry of perovskite compounds is directly related to the stoichiometry and to the valence states of the transition-metal ions. Defect engineering has become increasingly popular as it offers the possibility to influence the catalytic properties of perovskites for applications in energy storage and conversion devices such as solid-oxide fuel- and electrolyzer cells. LaFeO$_3$ (LFO) can be regarded as a base compound of the family of catalytically active perovskites La$_{1-x}$A$_x$Fe$_{1-y}$B$_y$O$_{3-δ}$, for which the defect chemistry as well as the electronic and ionic conductivity can be tuned by substitution on cationic sites. Combining theoretical and experimental approaches, we explore the suitability for A-site vacancy engineering, namely the feasibility of actively manipulating the valence state of Fe and the concentration of point defects by synthesizing La-deficient LFO. Formation energies and concentrations of point defects were determined as a function of processing conditions by first-principles DFT+U calculations. Based on the results, significant compositional deviations from stoichiometric LFO cannot be expected by providing rich or poor conditions of the oxidic precursor compounds (Fe$_2$O$_3$ and La$_2$O$_3$) in a solid-state processing route. In the experimental part, LFO was synthesized with a targeted La-site deficiency. We analyze the resulting phases by X-ray diffraction and scanning electron microscopy, (scanning) transmission electron microscopy in combination with energy-dispersive X-ray spectroscopy, and electron energy-loss spectrometry. Instead of a variation of the La/Fe ratio, a mixture of the two phases Fe$_2$O$_3$ and LFO was observed, resulting in an invariant charge state of Fe, in line with the theoretical results. We discuss our findings with respect to partly differing assumptions made in previous studies on this material system.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Localized Phonon Densities of States at Grain Boundaries in Silicon

Since it is now possible to record vibrational spectra at nanometer scales in the electron microscope it is of interest to explore whether defects such as dislocations or grain boundaries will result in measurable changes of the spectra. Phonon densities of states were calculated for a set of high angle grain boundaries in silicon. Since these boundaries are modeled by supercells with up to 160 atoms, the density of states was calculated by taking the Fourier transform of the velocity-velocity autocorrelation function from molecular dynamics simulations based on new supercells doubled in each direction. In select cases the results were checked on the original supercells with fewer atoms by comparison with the densities of states obtained by diagonalizing the dynamical matrix calculated using density functional theory. Near the core of the grain boundary the height of the optic phonon peak in the density of states at 60 meV was suppressed relative to features due to acoustic phonons that are largely unchanged relative to their bulk values. This can be attributed to the variation in the strength of bonds in grain boundary core regions where there is a range of bond lengths. It also means that changes in the density of states intrinsic to grain boundaries are unlikely to affect thermal conductivity at ambient temperatures, which are most likely dominated by the scattering of acoustic phonons.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Influence of extended defects on the formation energy, the hyperfine structure, and the zero-field splitting of NV centers in diamond

We present a density functional theory analysis of nitrogen-vacancy (NV) centers in diamond which are located in the vicinity of extended defects, namely intrinsic stacking faults (ISF), extrinsic stacking faults (ESF), and coherent twin boundaries (CTB) on \{111\} planes in diamond crystals. Several sites for NV centers close to the extended defects are energetically preferred with respect to the bulk crystal. This indicates that NV centers may be enriched at extended defects. We report the hyperfine structure (HFS) and zero-field splitting (ZFS) parameters of the NV centers at the extended defects which typically deviate by about 10\% but in some cases up to 90\% from their bulk values. Furthermore, we find that the influence of the extended defects on the NV centers is of short range: NV centers that are about three double layers (corresponding to $\sim6$ $\mathring{A}$ away from defect planes already show bulk-like behavior.

0 citations0 reviewsNo code linkedOpen access