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Source author record

Dana Z. Anderson

Dana Z. Anderson appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.atom-phcond-mat.quant-gasquant-phphysics.opticscond-mat.stat-mech

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Published work

15 published item(s)

preprint2022arXiv

Maxwell Matter Waves

Maxwell matter waves emerge from a perspective, complementary to de Broglie's, that matter is fundamentally a wave phenomenon whose particle aspects are revealed by quantum mechanics. Their quantum mechanical description is derived through the introduction of a matter vector potential, having frequency $ω_0$, to Schrodinger's equation for a massive particle. Maxwell matter waves are then seen to be coherent excitations of a single-mode of the matter-wave field. In the classical regime, their mechanics is captured by a matter analog of Maxwell's equations for the electromagnetic field. As such, Maxwell matter waves enable a spectrum of systems that have useful optical analogs, such as resonant matter-wave interferometric sensors and matter-wave parametric oscillators. These waves are associated with a wavelength that is tied to the drive frequency $ω_0$ rather than to the massive particle's energy, as is ordinarily the case with de Broglie matter waves. As a result, simple interferometric measurements lead to different outcomes for the two types of waves. While their apparent departure from de Broglie character is surprising, Maxwell matter waves are wholly consistent with quantum mechanics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Self-Adaptive Amplified Spontaneous Emission Suppression with a Photorefractive Two-Beam Coupling Filter

Amplified spontaneous emission is a source of broadband noise that parasitically limits the achievable gain in laser amplifiers. While optical bandpass filtering elements can suppress these broadband noise contributions, such filters are typically designed around specific frequencies or require manual tuning, rendering them less compatible with tunable laser systems. Here, we introduce a nonlinear self-adaptive filter and demonstrate the suppression of amplified spontaneous emission surrounding the lasing mode of a tunable 780 nm external cavity diode laser, using the two-beam coupling interaction in photorefractive BaTiO$_3$. A peak suppression of $-$10 dB is observed $\pm$2.5 nm from the lasing mode, with an overall 50% filter power throughput. The dynamic photorefractive filter is automatically centered on the peak frequency due to the continuous writing and readout of the volume holographic grating and can thereby also automatically adapt to frequency tuning, drift, or mode hopping with an estimated auto-tuning rate of 100 GHz/s under typical conditions. Additionally, we present opportunities for enhancing filter suppression characteristics via the input intensity ratio and tuning the bandwidth via the coupling angle, toward versatile, self-adaptive optical filtering.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Transport dynamics of ultracold atoms in a triple-well transistor-like potential

The transport of atoms is experimentally studied in a transistor-like triple-well potential consisting of a narrow gate well surrounded by source and drain wells. Atoms are initially loaded into the source well with pre-determined temperature and chemical potential. Energetic atoms flow from the source, across the gate, and into the drain where they are removed using a resonant light beam. The manifestation of atom-atom interactions and dissipation is evidenced by a rapid population growth in the initially vacant gate well. The transport dynamics are shown to depend strongly on a feedback parameter determined by the relative heights of the two barriers forming the gate region. For a range of feedback parameter values, experiments establish that the gate atoms develop a larger chemical potential and lower temperature than those in the source.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

An on-chip optical lattice for cold atom experiments

An atom-chip-based integrated optical lattice system for cold and ultracold atom applications is presented. The retro-reflection optics necessary for forming the lattice are bonded directly to the atom chip, enabling a compact and robust on-chip optical lattice system. After achieving Bose-Einstein condensation in a magnetic chip trap, we load atoms directly into a vertically oriented 1D optical lattice and demonstrate Landau-Zener tunneling. The atom chip technology presented here can be readily extended to higher dimensional optical lattices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Numerical model for atomtronic circuit analysis

A model for studying atomtronic devices and circuits based on finite temperature Bose-condensed gases is presented. The approach involves numerically solving equations of motion for atomic populations and coherences, derived using the Bose-Hubbard Hamiltonian and the Heisenberg picture. The resulting cluster expansion is truncated at a level giving balance between physics rigor and numerical demand mitigation. This approach allows parametric studies involving time scales that cover both the rapid population dynamics relevant to non-equilibrium state evolution, as well as the much longer time durations typical for reaching steady-state device operation. The model is demonstrated by studying the evolution of a Bose-condensed gas in the presence of atom injection and extraction in a double-well potential. In this configuration phase-locking between condensates in each well of the potential is readily observed, and its influence on the evolution of the system is studied.

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preprint2015arXiv

Principles of an atomtronic transistor

A semiclassical formalism is used to investigate the transistor-like behavior of ultracold atoms in a triple-well potential. Atom current flows from the source well, held at fixed chemical potential and temperature, into an empty drain well. In steady-state, the gate well located between the source and drain is shown to acquire a well-defined chemical potential and temperature, which are controlled by the relative height of the barriers separating the three wells. It is shown that the gate chemical potential can exceed that of the source and have a lower temperature. In electronics terminology, the source-gate junction can be reverse-biased. As a result, the device exhibits regimes of negative resistance and transresistance, indicating the presence of gain. Given an external current input to the gate, transistor-like behavior is characterized both in terms of the current gain, which can be greater than unity, and the power output of the device.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Undamped nonequilibrium dynamics of a nondegenerate Bose gas in a 3D isotropic trap

We investigate anomalous damping of the monopole mode of a non-degenerate 3D Bose gas under isotropic harmonic confinement as recently reported by the JILA TOP trap experiment [D. S. Lob- ser, A. E. S. Barentine, E. A. Cornell, and H. J. Lewandowski (in preparation)]. Given a realistic confining potential, we develop a model for studying collective modes that includes the effects of anharmonic corrections to a harmonic potential. By studying the influence of these trap anharmonicities throughout a range of temperatures and collisional regimes, we find that the damping is caused by the joint mechanisms of dephasing and collisional relaxation. Furthermore, the model is complimented by Monte Carlo simulations which are in fair agreement with data from the JILA experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

A Matterwave Transistor Oscillator

An atomtronic transistor circuit is used to realize a driven matterwave oscillator. The transistor consists of Source and Drain regions separated by a narrow Gate well. Quasi-steady-state behavior is determined from a thermodynamic model, which reveals two oscillation threshold regimes. One is due to the onset of Bose-Einstein condensation in the Gate well, the other is due to the appearance of a negative transresistance regime of the transistor. The thresholds of oscillation are shown to be primarily dependent on the potential energy height difference between Gate-Drain and Gate-Source barriers. The transistor potential is established with a combination of magnetic and optical fields using a compound glass and silicon substrate atom chip. The onset of oscillation and the output matterwave are observed through in-trap imaging. Time-of-flight absorption imaging is used to determine the time dependence of the Source well thermal and chemical energies as well as to estimate the value of the closed-loop ohmic Gate resistance, which is negative and is observed to cause cooling of Source atoms.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Efficient Direct Evaporative Cooling in an Atom Chip Magnetic Trap

We demonstrate direct evaporative cooling of $^{87}$Rb atoms confined in a dimple trap produced by an atom chip. By changing the two chip currents and two external bias fields, we show theoretically that the trap depth can be lowered in a controlled way with no change in the trap frequencies or the value of the field at the trap center. Experimentally, we maximized the decrease in trap depth by allowing some loosening of the trap. In total, we reduced the trap depth by a factor of 20. The geometric mean of the trap frequencies was reduced by less than a factor of 6. The measured phase space density in the final two stages increased by more than two orders of magnitude, and we estimate an increase of four orders of magnitude over the entire sequence. A subsequent rf evaporative sweep of only a few megahertz produced Bose-Einstein condensates. We also produce condensates in which raising the trap bottom pushes hotter atoms into an rf "knife" operating at a fixed frequency of 5\,MHz.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Principles of an Atomtronic Battery

An asymmetric atom trap is investigated as a means to implement a "battery" that supplies ultracold atoms to an atomtronic circuit. The battery model is derived from a scheme for continuous loading of a non-dissipative atom trap proposed by Roos et al.(Europhysics Letters V61, 187 (2003)). The trap is defined by longitudinal and transverse trap frequencies and corresponding trap energy heights. The battery's ability to supply power to a load is evaluated as a function of an input atom flux and power. For given trap parameters and input flux the battery is shown to have a resonantly optimum value of input power. The battery behavior can be cast in terms of an equivalent circuit model; specifically, for fixed input flux and power the battery is modeled in terms of a Thévenin equivalent chemical potential and internal resistance. The internal resistance establishes the maximum power that can be supplied to a circuit, the heat that will be generated by the battery, and that noise will be imposed on the circuit. We argue that any means of implementing a battery for atomtronics can be represented by a Thévenin equivalent and that its performance will likewise be determined by an internal resistance.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

High-Resolution Imaging and Optical Control of Bose-Einstein Condensates in an Atom Chip Magnetic Trap

A high-resolution projection and imaging system for ultracold atoms is implemented using a compound silicon and glass atom chip. The atom chip is metalized to enable magnetic trapping while glass regions enable high numerical aperture optical access to atoms residing in the magnetic trap about 100 microns below the chip surface. The atom chip serves as a wall of the vacuum system, which enables the use of commercial microscope components for projection and imaging. Holographically generated light patterns are used to optically slice a cigar-shaped magnetic trap into separate regions; this has been used to simultaneously generate up to four Bose-condensates. Using fluorescence techniques we have demonstrated in-trap imaging resolution down to 2.5 microns

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Analysis of a free oscillation atom interferometer

We analyze a Bose-Einstein condensate (BEC) - based free oscillation atom Michelson interferometer in a weakly confining harmonic magnetic trap. A BEC at the center of the trap is split into two harmonics by a laser standing wave. The harmonics move in opposite directions with equal speeds and turn back under the influence of the trapping potential at their classical turning points. The harmonics are allowed to pass through each other and a recombination pulse is applied when they overlap at the end of a cycle after they return for the second time. We derive an expression for the contrast of the interferometric fringes and obtain the fundamental limit of performance of the interferometer in the parameter space.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Revealing buried information: Statistical processing techniques for ultracold gas image analysis

The techniques of principal and independent component analysis are applied to images of ultracold atoms. As an illustrative example, we present the use of these model-independent methods to rapidly determine the differential phase of a BEC interferometer from large sets of images of interference patterns. These techniques have been useful in the calibration of the experiment and in the investigation of phase randomization. The details of the algorithms are provided.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

A Compact, Transportable, Microchip-Based System for High Repetition Rate Production of Bose-Einstein Condensates

We present a compact, transportable system that produces Bose-Einstein condensates (BECs) near the surface of an integrated atom microchip. The system occupies a volume of 0.4 m^3 and operates at a repetition rate as high as 0.3 Hz. Evaporative cooling in a chip trap with trap frequencies of several kHz leads to nearly pure condensates containing 1.9x10^4 87Rb atoms. Partial condensates are observed at a temperature of 1.58(8) μK, close to the theoretical transition temperature of 1.1 μK.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Transistor-Like Behavior of a Bose-Einstein Condensate in a Triple Well Potential

In the last several years considerable efforts have been devoted to developing Bose-Einstein Condensate (BEC)-based devices for applications such as fundamental research, precision measurements and integrated atom optics. Such devices capable of complex functionality can be designed from simpler building blocks as is done in microelectronics. One of the most important components of microelectronics is a transistor. We demonstrate that Bose-Einstein condensate in a three well potential structure where the tunneling of atoms between two wells is controlled by the population in the third, shows behavior similar to that of an electronic field effect transistor. Namely, it exhibits switching and both absolute and differential gain. The role of quantum fluctuations is analyzed, estimates of switching time and parameters for the potential are presented.

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