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Alex A. Zozulya

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physics.atom-ph cond-mat.quant-gas quant-ph cond-mat.stat-mech

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preprint2015arXiv

Principles of an atomtronic transistor

A semiclassical formalism is used to investigate the transistor-like behavior of ultracold atoms in a triple-well potential. Atom current flows from the source well, held at fixed chemical potential and temperature, into an empty drain well. In steady-state, the gate well located between the source and drain is shown to acquire a well-defined chemical potential and temperature, which are controlled by the relative height of the barriers separating the three wells. It is shown that the gate chemical potential can exceed that of the source and have a lower temperature. In electronics terminology, the source-gate junction can be reverse-biased. As a result, the device exhibits regimes of negative resistance and transresistance, indicating the presence of gain. Given an external current input to the gate, transistor-like behavior is characterized both in terms of the current gain, which can be greater than unity, and the power output of the device.

preprint2013arXiv

A Matterwave Transistor Oscillator

An atomtronic transistor circuit is used to realize a driven matterwave oscillator. The transistor consists of Source and Drain regions separated by a narrow Gate well. Quasi-steady-state behavior is determined from a thermodynamic model, which reveals two oscillation threshold regimes. One is due to the onset of Bose-Einstein condensation in the Gate well, the other is due to the appearance of a negative transresistance regime of the transistor. The thresholds of oscillation are shown to be primarily dependent on the potential energy height difference between Gate-Drain and Gate-Source barriers. The transistor potential is established with a combination of magnetic and optical fields using a compound glass and silicon substrate atom chip. The onset of oscillation and the output matterwave are observed through in-trap imaging. Time-of-flight absorption imaging is used to determine the time dependence of the Source well thermal and chemical energies as well as to estimate the value of the closed-loop ohmic Gate resistance, which is negative and is observed to cause cooling of Source atoms.

preprint2013arXiv

Principles of an Atomtronic Battery

An asymmetric atom trap is investigated as a means to implement a "battery" that supplies ultracold atoms to an atomtronic circuit. The battery model is derived from a scheme for continuous loading of a non-dissipative atom trap proposed by Roos et al.(Europhysics Letters V61, 187 (2003)). The trap is defined by longitudinal and transverse trap frequencies and corresponding trap energy heights. The battery's ability to supply power to a load is evaluated as a function of an input atom flux and power. For given trap parameters and input flux the battery is shown to have a resonantly optimum value of input power. The battery behavior can be cast in terms of an equivalent circuit model; specifically, for fixed input flux and power the battery is modeled in terms of a Thévenin equivalent chemical potential and internal resistance. The internal resistance establishes the maximum power that can be supplied to a circuit, the heat that will be generated by the battery, and that noise will be imposed on the circuit. We argue that any means of implementing a battery for atomtronics can be represented by a Thévenin equivalent and that its performance will likewise be determined by an internal resistance.

preprint2011arXiv

Analysis of a free oscillation atom interferometer

We analyze a Bose-Einstein condensate (BEC) - based free oscillation atom Michelson interferometer in a weakly confining harmonic magnetic trap. A BEC at the center of the trap is split into two harmonics by a laser standing wave. The harmonics move in opposite directions with equal speeds and turn back under the influence of the trapping potential at their classical turning points. The harmonics are allowed to pass through each other and a recombination pulse is applied when they overlap at the end of a cycle after they return for the second time. We derive an expression for the contrast of the interferometric fringes and obtain the fundamental limit of performance of the interferometer in the parameter space.

preprint2010arXiv

Atomic population distribution in the output ports of cold-atom interferometers with optical splitting and recombination

Cold-atom interferometers with optical splitting and recombination use off-resonant laser beams to split a cloud of Bose-Einstein condensate (BEC) into two clouds that travel along different paths and are then recombined again using optical beams. After the recombination, the BEC in general populates both the cloud at rest and the moving clouds. Measuring relative number of atoms in each of these clouds yields information about the relative phase shift accumulated by the atoms in the two moving clouds during the interferometric cycle. We derive the expression for the probability of finding any given number of atoms in each of the clouds, discuss features of the probability density distribution, analyze its dependence on the relative accumulated phase shift as a function of the strength of the interatomic interactions, and compare our results with experiment.

preprint2010arXiv

Revealing buried information: Statistical processing techniques for ultracold gas image analysis

The techniques of principal and independent component analysis are applied to images of ultracold atoms. As an illustrative example, we present the use of these model-independent methods to rapidly determine the differential phase of a BEC interferometer from large sets of images of interference patterns. These techniques have been useful in the calibration of the experiment and in the investigation of phase randomization. The details of the algorithms are provided.

preprint2006arXiv

Transistor-Like Behavior of a Bose-Einstein Condensate in a Triple Well Potential

In the last several years considerable efforts have been devoted to developing Bose-Einstein Condensate (BEC)-based devices for applications such as fundamental research, precision measurements and integrated atom optics. Such devices capable of complex functionality can be designed from simpler building blocks as is done in microelectronics. One of the most important components of microelectronics is a transistor. We demonstrate that Bose-Einstein condensate in a three well potential structure where the tunneling of atoms between two wells is controlled by the population in the third, shows behavior similar to that of an electronic field effect transistor. Namely, it exhibits switching and both absolute and differential gain. The role of quantum fluctuations is analyzed, estimates of switching time and parameters for the potential are presented.