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Daiki Kaneko

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2 publications

preprint2021arXiv

A hybrid seesaw model and hierarchical neutrino flavor structures based on A4A_{4} symmetry

We propose a hybrid seesaw model based on A4A_{4} flavor symmetry, which generates a large hierarchical flavor structure. In our model, tree-level and one-loop seesaw mechanisms predict different flavor structures in the neutrino mass matrix, and generate a notable hierarchy among them. We find that such a hierarchical structure gives a large effective neutrino mass which can be accessible by next-generation neutrinoless double beta decay experiments. Majorana phases can also be predictable. The A4A_{4} flavor symmetry in the model is spontaneously broken to the Z2Z_{2} symmetry, leading to a dark matter candidate which is assumed to be a neutral scalar field. The favored mass region of the dark matter is obtained by numerical computations of the relic abundance and the cross section of the nucleon. We also investigate the predictions of the several hierarchical flavor structures based on A4A_{4} symmetry for the effective neutrino mass and the Majorana phases, and find the characteristic features depending on the hierarchical structures.

preprint2015arXiv

Growth and characterization of insulating ferromagnetic semiconductor (Al,Fe)Sb

We investigate the crystal structure, transport and magnetic properties of Fe-doped ferromagnetic semiconductor (Al1-x,Fex)Sb thin films up to x = 14% grown by molecular beam epitaxy. All the samples show p-type conduction at room temperature and insulating behavior at low temperature. The (Al1-x,Fex)Sb thin films with x lower or equal to 10% maintain the zinc blende crystal structure of the host material AlSb. The (Al1-x,Fex)Sb thin film with x = 10% shows intrinsic ferromagnetism with a Curie temperature (TC) of 40 K. In the (Al1-x,Fex)Sb thin film with x = 14%, a sudden drop of mobility and TC was observed, which may be due to microscopic phase separation. The observation of ferromagnetism in (Al,Fe)Sb paves the way to realize a spin-filtering tunnel barrier that is compatible with well-established III-V semiconductor devices.

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