Researcher profile

Dafiné Ravelosona

Dafiné Ravelosona contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2021arXiv

Forecasting the outcome of spintronic experiments with Neural Ordinary Differential Equations

Deep learning has an increasing impact to assist research, allowing, for example, the discovery of novel materials. Until now, however, these artificial intelligence techniques have fallen short of discovering the full differential equation of an experimental physical system. Here we show that a dynamical neural network, trained on a minimal amount of data, can predict the behavior of spintronic devices with high accuracy and an extremely efficient simulation time, compared to the micromagnetic simulations that are usually employed to model them. For this purpose, we re-frame the formalism of Neural Ordinary Differential Equations (ODEs) to the constraints of spintronics: few measured outputs, multiple inputs and internal parameters. We demonstrate with Spin-Neural ODEs an acceleration factor over 200 compared to micromagnetic simulations for a complex problem -- the simulation of a reservoir computer made of magnetic skyrmions (20 minutes compared to three days). In a second realization, we show that we can predict the noisy response of experimental spintronic nano-oscillators to varying inputs after training Spin-Neural ODEs on five milliseconds of their measured response to different excitations. Spin-Neural ODE is a disruptive tool for developing spintronic applications in complement to micromagnetic simulations, which are time-consuming and cannot fit experiments when noise or imperfections are present. Spin-Neural ODE can also be generalized to other electronic devices involving dynamics.

preprint2015arXiv

Spin-orbit torques for current parallel and perpendicular to a domain wall

We report field- and current-induced domain wall (DW) depinning experiments in Ta/Co20Fe60B20/MgO nanowires through a Hall cross geometry. While purely field-induced depinning shows no angular dependence on in-plane fields, the effect of the current depends crucially on the internal DW structure, which we manipulate by an external magnetic in-plane field. We show for the first time depinning measurements for a current sent parallel to the DW and compare its depinning efficiency with the conventional case of current flowing perpendicularly to the DW. We find that the maximum efficiency is similar for both current directions within the error bars, which is in line with a dominating damping-like spin-orbit torque (SOT) and indicates that no large additional torques arise for currents parallel to the DW. Finally, we find a varying dependence of the maximum depinning efficiency angle for different DWs and pinning levels. This emphasizes the importance of our full angular scans compared to previously used measurements for just two field directions (parallel and perpendicular to the DW) and shows the sensitivity of the spin-orbit torque to the precise DW structure and pinning sites.

preprint2012arXiv

Electric field control of domain wall logic in piezoelec-tric/ferromagnetic nanodevices

Power dissipation is one of the most important factors limiting the future miniaturisation of integrated circuits. The capability of controlling magnetic states with a low voltage through magnetoelectric coupling in magnetostrictive/piezoelectric systems may pave the way toward ultra low-power electronics. Although the former effect has been demon-strated in several multiferroic heterostructures, the incorporation of such complex geometries into practical magnetic memory and logic nanodevices has been lacking. Here, we demonstrate the room temperature control of a domain wall gate with an electric field in a nanowire consisting of a laterally polarized piezoelectric bar inducing a giant strain in a ferromagnetic spin-valve. We propose to use such novel domain wall gate as an elementary brick to generate a complete set of boolean logic functions or stabilize domain walls in high density memory applications.