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Daesu Lee

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cond-mat.mtrl-sci cond-mat.other cond-mat.str-el

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preprint2011arXiv

Giant Flexoelectric Effect in Ferroelectric Epitaxial Thin Films

We report on nanoscale strain gradients in ferroelectric HoMnO3 epitaxial thin films, resulting in a giant flexoelectric effect. Using grazing-incidence in-plane X-ray diffraction, we measured strain gradients in the films, which were 6 or 7 orders of magnitude larger than typical values reported for bulk oxides. The combination of transmission electron microscopy, electrical measurements, and electrostatic calculations showed that flexoelectricity provides a means of tuning the physical properties of ferroelectric epitaxial thin films, such as domain configurations and hysteresis curves.

preprint2011arXiv

Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects

We investigated a switchable ferroelectric diode effect and its physical mechanism in Pt/BiFeO3/SrRuO3 thin-film capacitors. Our results of electrical measurements support that, near the Pt/BiFeO3 interface of as-grown samples, a defective layer (possibly, an oxygen-vacancy-rich layer) becomes formed and disturbs carrier injection. We therefore used an electrical training process to obtain ferroelectric control of the diode polarity where, by changing the polarization direction using an external bias, we could switch the transport characteristics between forward and reverse diodes. Our system is characterized with a rectangular polarization hysteresis loop, with which we confirmed that the diode polarity switching occurred at the ferroelectric coercive voltage. Moreover, we observed a simultaneous switching of the diode polarity and the associated photovoltaic response dependent on the ferroelectric domain configurations. Our detailed study suggests that the polarization charge can affect the Schottky barrier at the ferroelectric/metal interfaces, resulting in a modulation of the interfacial carrier injection. The amount of polarization-modulated carrier injection can affect the transition voltage value at which a space-charge-limited bulk current-voltage (J-V) behavior is changed from Ohmic (i.e., J ~ V) to nonlinear (i.e., J ~ V^n with n \geq 2). This combination of bulk conduction and polarization-modulated carrier injection explains the detailed physical mechanism underlying the switchable diode effect in ferroelectric capacitors.

preprint2010arXiv

Double polarization hysteresis loop induced by the domain pinning by defect dipoles in HoMnO3 epitaxial thin films

We report on antiferroelectriclike double polarization hysteresis loops in multiferroic HoMnO3 thin films below the ferroelectric Curie temperature. This intriguing phenomenon is attributed to the domain pinning by defect dipoles which were introduced unintentionally during film growth process. Electron paramagnetic resonance suggests the existence of Fe1+ defects in thin films and first principles calculations reveal that the defect dipoles would be composed of oxygen vacancy and Fe1+ defect. We discuss migration of charged point defects during film growth process and formation of defect dipoles along ferroelectric polarization direction, based on the site preference of point defects. Due to a high-temperature low-symmetry structure of HoMnO3, aging is not required to form the defect dipoles in contrast to other ferroelectrics (e.g., BaTiO3).

preprint2008arXiv

Optical spectroscopic investigation on the coupling of electronic and magnetic structure in multiferroic hexagonal RMnO3 (R = Gd, Tb, Dy, and Ho) thin films

We investigated the effects of temperature and magnetic field on the electronic structure of hexagonal RMnO3 (R = Gd, Tb, Dy, and Ho) thin films using optical spectroscopy. As the magnetic ordering of the system was disturbed, a systematic change in the electronic structure was commonly identified in this series. The optical absorption peak near 1.7 eV showed an unexpectedly large shift of more than 150 meV from 300 K to 15 K, accompanied by an anomaly of the shift at the Neel temperature. The magnetic field dependent measurement clearly revealed a sizable shift of the corresponding peak when a high magnetic field was applied. Our findings indicated strong coupling between the magnetic ordering and the electronic structure in the multiferroic hexagonal RMnO3 compounds.