BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

D. Yi

D. Yi contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.str-elcond-mat.mtrl-sci

Trust snapshot

Quick read

Trust 21 - Emerging
7works
0followers
2topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

7 published item(s)

preprint2016arXiv

Strain-induced nonsymmorphic symmetry breaking and removal of Dirac semimetallic nodal line in an orthoperovskite iridate

By using a combination of heteroepitaxial growth, structure refinement based on synchrotron x-ray diffraction and first-principles calculations, we show that the symmetry-protected Dirac line nodes in the topological semimetallic perovskite SrIrO3 can be lifted simply by applying epitaxial constraints. In particular, the Dirac gap opens without breaking the Pbnm mirror symmetry. In virtue of a symmetry-breaking analysis, we demonstrate that the original symmetry protection is related to the n-glide operation, which can be selectively broken by different heteroepitaxial structures. This symmetry protection renders the nodal line a nonsymmorphic Dirac semimetallic state. The results highlight the vital role of crystal symmetry in spin-orbit-coupled correlated oxides and provide a foundation for experimental realization of topological insulators in iridate-based heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Ambipolar Transport and Magneto-resistance Crossover in a Mott Insulator, Sr$_{2}$IrO$_{4}$

Electric field effect (EFE) controlled magnetoelectric transport in thin films of undoped and La-doped Sr$_{2}$IrO$_{4}$ (SIO) were investigated under the action of ionic liquid gating. Despite large carrier density modulation, the temperature dependent resistance measurements exhibit insulating behavior in chemically and EFE doped samples with the band filling up to 10\%. The ambipolar transport across the Mott gap is demonstrated by EFE tuning of the activation energy. Further, we observe a crossover from a negative magnetoresistance (MR) at high temperatures to positive MR at low temperatures. The crossover temperature was around $\sim$80-90 K, irrespective of the filling. This temperature and magnetic field dependent crossover is qualitatively associated with a change in the conduction mechanism from Mott to Coulomb gap mediated variable range hopping (VRH). This explains the origin of robust insulating ground state of SIO in electrical transport studies and highlights the importance of disorder and Coulombic interaction on electrical properties of SIO.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Room-temperature antiferromagnetic memory resistor

The bistability of ordered spin states in ferromagnets (FMs) provides the magnetic memory functionality. Traditionally, the macroscopic moment of ordered spins in FMs is utilized to write information on magnetic media by a weak external magnetic field, and the FM stray field is used for reading. However, the latest generation of magnetic random access memories demonstrates a new efficient approach in which magnetic fields are replaced by electrical means for reading and writing. This concept may eventually leave the sensitivity of FMs to magnetic fields as a mere weakness for retention and the FM stray fields as a mere obstacle for high-density memory integration. In this paper we report a room-temperature bistable antiferromagnetic (AFM) memory which produces negligible stray fields and is inert in strong magnetic fields. We use a resistor made of an FeRh AFM whose transition to a FM order 100 degrees above room-temperature, allows us to magnetically set different collective directions of Fe moments. Upon cooling to room-temperature, the AFM order sets in with the direction the AFM moments pre-determined by the field and moment direction in the high temperature FM state. For electrical reading, we use an antiferromagnetic analogue of the anisotropic magnetoresistance (AMR). We report microscopic theory modeling which confirms that this archetypical spintronic effect discovered more than 150 years ago in FMs, can be equally present in AFMs. Our work demonstrates the feasibility to realize room-temperature spintronic memories with AFMs which greatly expands the magnetic materials base for these devices and offers properties which are unparalleled in FMs.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Induced magnetization in La$_{0.7}$Sr$_{0.3}$MnO$_3$/BiFeO$_3$ superlattices

Using polarized neutron reflectometry (PNR), we observe an induced magnetization of 75$\pm$ 25 kA/m at 10 K in a La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO)/BiFeO$_3$ superlattice extending from the interface through several atomic layers of the BiFeO$_3$ (BFO). The induced magnetization in BFO is explained by density functional theory, where the size of bandgap of BFO plays an important role. Considering a classical exchange field between the LSMO and BFO layers, we further show that magnetization is expected to extend throughout the BFO, which provides a theoretical explanation for the results of the neutron scattering experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Epitaxy-distorted spin-orbit Mott insulator in Sr2IrO4 thin films

High quality epitaxial thin films of Jeff=1/2 Mott insulator Sr2IrO4 with increasing in-plane tensile strain have been grown on top of SrTiO3(001) substrates. Increasing the in-plane tensile strain up to ~0.3% was observed to drop the c/a tetragonality by 1.2 %. X-ray absorption spectroscopy detected a strong reduction of the linear dichroism upon increasing in-plane tensile strain towards a reduced anisotropy in the local electronic structure. While the most relaxed thin film shows a consistent dependence with previously reported single crystal bulk measurements, electrical transport reveals a charge gap reduction from 200 meV down to 50 meV for the thinnest and most epitaxy-distorted film. We argue that the reduced tetragonality plays a major role in the change of the electronic structure, which is reflected in the change of the transport properties. Our work opens the possibility for exploiting epitaxial strain as a tool for both structural and functional manipulation of spin-orbit Mott systems.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Symmetry-Tunable Environment in Functional Ferroic Heterostructures

We demonstrate a concept for post-growth symmetry control in oxide heterostructures. A functional oxide is sandwiched between two ferroelectric layers and inversion symmetry at the position of the oxide constituent is reversibly switched on or off by layer-selective electric-field poling. The functionality of this process is monitored by optical second harmonic generation. The generalization of our approach to other materials and symmetries is considered. We thus establish ferroic trilayer structures as device components in which symmetry-driven charge-, spin-, and strain-related functionalities can be activated and deactivated at will.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Tuning the electronic properties of J_eff=1/2 correlated semimetal in epitaxial perovskite SrIrO3

We investigated the electronic properties of epitaxially stabilized perovskite SrIrO3 and demonstrated the effective strain-control on its electronic structure. Comprehensive transport measurements showed that the strong spin-orbit coupling renders a novel semimetallic phase for the J_eff=1/2 electrons rather than an ordinary correlated metal, elucidating the nontrivial mechanism underlying the dimensionality-controlled metal-insulator transition in iridates. The electron-hole symmetry of this correlated semimetal was found to exhibit drastic variation when subject to bi-axial strain. Under compressive strain, substantial electron-hole asymmetry is observed in contrast to the tensile side, where the electron and hole effective masses are comparable, illustrating the susceptivity of the J_eff=1/2 to structural distortion. Tensile strain also shrinks the Fermi surface, indicative of an increasing degree of correlation which is consistent with optical measurements. These results pave a pathway to investigate and manipulate the electronic states in spin-orbit-coupled correlated oxides, and lay the foundation for constructing 5d transition metal heterostructures.

0 citations0 reviewsNo code linkedOpen access