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Researcher profile

D. V. Fateev

D. V. Fateev contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2015arXiv

Noncentrosymmetric plasmon modes and giant terahertz photocurrent in a two-dimensional plasmonic crystal

We introduce and theoretically study the plasmon-photogalvanic effect in the planar noncentrosymmetric plasmonic crystal containing a homogeneous two-dimensional electron system gated by a periodic metal grating with an asymmetric unit cell. The plasmon-photogalvanic DC current arises due to the two-dimensional electron drag by the noncentrosymmetric plasmon modes excited under normal incidence of terahertz radiation. We show that the collective plasmon modes of the planar plasmonic crystal become strongly noncentrosymmetric in the weak coupling regime of their anticrossing. Large plasmon wavevector (which is typically by two-three orders of magnitude greater than the terahertz photon wavevector) along with strong near-field enhancement at the plasmon resonance make the plasmonic drag a much stronger effect compared to the photon drag observed in conventional two-dimensional electron systems.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Terahertz ratchet effects in graphene with a lateral superlattice

Experimental and theoretical studies on ratchet effects in graphene with a lateral superlattice excited by alternating electric fields of terahertz frequency range are presented. A lateral superlatice deposited on top of monolayer graphene is formed either by periodically repeated metal stripes having different widths and spacings or by inter-digitated comb-like dual-grating-gate (DGG) structures. We show that the ratchet photocurrent excited by terahertz radiation and sensitive to the radiation polarization state can be efficiently controlled by the back gate driving the system through the Dirac point as well as by the lateral asymmetry varied by applying unequal voltages to the DGG subgratings. The ratchet photocurrent includes the Seebeck thermoratchet effect as well as the effects of "linear" and "circular" ratchets, sensitive to the corresponding polarization of the driving electromagnetic force. The experimental data are analyzed for the electronic and plasmonic ratchets taking into account the calculated potential profile and the near field acting on carriers in graphene. We show that the photocurrent generation is based on a combined action of a spatially periodic in-plane potential and the spatially modulated light due to the near field effects of the light diffraction.

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preprint2011arXiv

Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell

Plasmonic terahertz detection by a double-grating gate field-effect transistor structure with an asymmetric unit cell is studied theoretically. Detection responsivity exceeding 8 kV/W at room temperature in the photovoltaic response mode is predicted for strong asymmetry of the structure unit cell. This value of the responsivity is an order of magnitude greater than reported previously for the other types of uncooled plasmonic terahertz detectors. Such enormous responsivity can be obtained without using any supplementary antenna elements because the double-grating gate acts as an aerial matched antenna that effectively couples the incoming terahertz radiation to plasma oscillations in the structure channel.

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preprint2011arXiv

Terahertz detection in a slit-grating-gate field-effect-transistor structure

We have fabricated a grating-gate InGaAs/GaAs field-effect transistor structure with narrow slits between the grating gate fingers. The resonant photoconductive response of this structure has been measured in the sub-terahertz frequency range. The frequencies of the photoresponse peaks correspond to the excitation of the plasmon resonances in the structure channel. The obtained responsivity exceeds the responsivity reported previously for similar plasmonic terahertz detectors by two orders of magnitude due to enhanced coupling between incoming terahertz radiation and plasmon oscillations in the slit-grating-gate field-effect transistor structure.

0 citations0 reviewsNo code linkedOpen access