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D. Ullmo

D. Ullmo contributes to research discovery and scholarly infrastructure.

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cond-mat chao-dyn cond-mat.mes-hall nlin.CD quant-ph

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preprint2011arXiv

The Zak phase and the existence of edge states in graphene

We develop a method to predict the existence of edge states in graphene ribbons for a large class of boundaries. This approach is based on the bulk-edge correspondence between the quantized value of the Zak phase Z(k), which is a Berry phase across an appropriately chosen one-dimensional Brillouin zone, and the existence of a localized state of momentum k at the boundary of the ribbon. This bulk-edge correspondence is rigorously demonstrated for a one dimensional toy model as well as for graphene ribbons with zigzag edges. The range of k for which edge states exist in a graphene ribbon is then calculated for arbitrary orientations of the edges. Finally, we show that the introduction of an anisotropy leads to a topological transition in terms of the Zak phase, which modifies the localization properties at the edges. Our approach gives a new geometrical understanding of edge states, it confirms and generalizes the results of several previous works.

preprint1996arXiv

Integrability and Disorder in Mesoscopic Systems: Application to Orbital Magnetism

We present a semiclassical theory of weak disorder effects in small structures and apply it to the magnetic response of non-interacting electrons confined in integrable geometries. We discuss the various averaging procedures describing different experimental situations in terms of one- and two-particle Green functions. We demonstrate that the anomalously large zero-field susceptibility characteristic of clean integrable structures is only weakly suppressed by disorder. This damping depends on the ratio of the typical size of the structure with the two characteristic length scales describing the disorder (elastic mean-free-path and correlation length of the potential) in a power-law form for the experimentally relevant parameter region. We establish the comparison with the available experimental data and we extend the study of the interplay between disorder and integrability to finite magnetic fields.

preprint1996arXiv

Orbital Magnetism in the Ballistic Regime: Geometrical Effects

We present a general semiclassical theory of the orbital magnetic response of noninteracting electrons confined in two-dimensional potentials. We calculate the magnetic susceptibility of singly-connected and the persistent currents of multiply-connected geometries. We concentrate on the geometric effects by studying confinement by perfect (disorder free) potentials stressing the importance of the underlying classical dynamics. We demonstrate that in a constrained geometry the standard Landau diamagnetic response is always present, but is dominated by finite-size corrections of a quasi-random sign which may be orders of magnitude larger. These corrections are very sensitive to the nature of the classical dynamics. Systems which are integrable at zero magnetic field exhibit larger magnetic response than those which are chaotic. This difference arises from the large oscillations of the density of states in integrable systems due to the existence of families of periodic orbits. The connection between quantum and classical behavior naturally arises from the use of semiclassical expansions. This key tool becomes particularly simple and insightful at finite temperature, where only short classical trajectories need to be kept in the expansion. In addition to the general theory for integrable systems, we analyze in detail a few typical examples of experimental relevance: circles, rings and square billiards. In the latter, extensive numerical calculations are used as a check for the success of the semiclassical analysis. We study the weak-field regime where classical trajectories remain essentially unaffected, the intermediate field regime where we identify new oscillations characteristic for ballistic mesoscopic structures, and the high-field regime where the typical de Haas-van Alphen oscillations exhibit finite-size corrections. We address the comparison with experimental data obtained in high-mobility semiconductor microstructures discussing the differences between individual and ensemble measurements, and the applicability of the present model.

preprint1995arXiv

The Level Splitting Distribution in Chaos-assisted Tunneling

A compound tunneling mechanism from one integrable region to another mediated by a delocalized state in an intermediate chaotic region of phase space was recently introduced to explain peculiar features of tunneling in certain two-dimensional systems. This mechanism is known as chaos-assisted tunneling. We study its consequences for the distribution of the level splittings and obtain a general analytical form for this distribution under the assumption that chaos assisted tunneling is the only operative mechanism. %The validity of this form can then in %principle be checked either numerically or even experimentally. We have checked that the analytical form we obtain agrees with splitting distributions calculated numerically for a model system in which chaos-assisted tunneling is known to be the dominant mechanism. The distribution depends on two parameters: The first gives the scale of the splittings and is related to the magnitude of the classically forbidden processes, the second gives a measure of the efficiency of possible barriers to classical transport which may exist in the chaotic region. If these are weak, this latter parameter is irrelevant; otherwise it sets an energy scale at which the splitting distribution crosses over from one type of behavior to another. The detailed form of the crossover is also obtained and found to be in good agreement with numerical results for models for chaos-assisted tunneling.