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Researcher profile

R. A. Jalabert

R. A. Jalabert contributes to research discovery and scholarly infrastructure.

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cond-matcond-mat.mes-hall

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Published work

3 published item(s)

preprint2013arXiv

Theory of scanning gate microscopy

A systematic theory of the conductance measurements of non-invasive (weak probe) scanning gate microscopy is presented that provides an interpretation of what precisely is being measured. A scattering approach is used to derive explicit expressions for the first and second order conductance changes due to the perturbation by the tip potential in terms of the scattering states of the unperturbed structure. In the case of a quantum point contact, the first order correction dominates at the conductance steps and vanishes on the plateaus where the second order term dominates. Both corrections are non-local for a generic structure. Only in special cases, such as that of a centrally symmetric quantum point contact in the conductance quantization regime, can the second order correction be unambiguously related with the local current density. In the case of an abrupt quantum point contact we are able to obtain analytic expressions for the scattering eigenfunctions and thus evaluate the resulting conductance corrections.

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preprint1996arXiv

Integrability and Disorder in Mesoscopic Systems: Application to Orbital Magnetism

We present a semiclassical theory of weak disorder effects in small structures and apply it to the magnetic response of non-interacting electrons confined in integrable geometries. We discuss the various averaging procedures describing different experimental situations in terms of one- and two-particle Green functions. We demonstrate that the anomalously large zero-field susceptibility characteristic of clean integrable structures is only weakly suppressed by disorder. This damping depends on the ratio of the typical size of the structure with the two characteristic length scales describing the disorder (elastic mean-free-path and correlation length of the potential) in a power-law form for the experimentally relevant parameter region. We establish the comparison with the available experimental data and we extend the study of the interplay between disorder and integrability to finite magnetic fields.

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preprint1996arXiv

Orbital Magnetism in the Ballistic Regime: Geometrical Effects

We present a general semiclassical theory of the orbital magnetic response of noninteracting electrons confined in two-dimensional potentials. We calculate the magnetic susceptibility of singly-connected and the persistent currents of multiply-connected geometries. We concentrate on the geometric effects by studying confinement by perfect (disorder free) potentials stressing the importance of the underlying classical dynamics. We demonstrate that in a constrained geometry the standard Landau diamagnetic response is always present, but is dominated by finite-size corrections of a quasi-random sign which may be orders of magnitude larger. These corrections are very sensitive to the nature of the classical dynamics. Systems which are integrable at zero magnetic field exhibit larger magnetic response than those which are chaotic. This difference arises from the large oscillations of the density of states in integrable systems due to the existence of families of periodic orbits. The connection between quantum and classical behavior naturally arises from the use of semiclassical expansions. This key tool becomes particularly simple and insightful at finite temperature, where only short classical trajectories need to be kept in the expansion. In addition to the general theory for integrable systems, we analyze in detail a few typical examples of experimental relevance: circles, rings and square billiards. In the latter, extensive numerical calculations are used as a check for the success of the semiclassical analysis. We study the weak-field regime where classical trajectories remain essentially unaffected, the intermediate field regime where we identify new oscillations characteristic for ballistic mesoscopic structures, and the high-field regime where the typical de Haas-van Alphen oscillations exhibit finite-size corrections. We address the comparison with experimental data obtained in high-mobility semiconductor microstructures discussing the differences between individual and ensemble measurements, and the applicability of the present model.

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