BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

D. Sztenkiel

D. Sztenkiel contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hall

Trust snapshot

Quick read

Trust 19 - UnverifiedVerification L1Unclaimed author
5works
0followers
2topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

5 published item(s)

preprint2012arXiv

Homogenous and heterogeneous magnetism in (Zn,Co)O

A series of (ZnO)m(CoO)n digital alloys and superlattices grown by atomic layer deposition has been investigated by a range of experimental methods. The data provide evidences that the Co interdiffusion in the digital alloy structures is sufficient to produce truly random Zn1-xCoxO mixed crystals with x up to 40%. Conversely, in the superlattice structures the interdiffusion is not strong enough to homogenize the Co content along the growth direction results in the formation of (Zn,Co)O films with spatially modulated Co concentrations. All structures deposited at 160\circC show magnetic properties specific to dilute magnetic semiconductors with localized spins S = 3/2 coupled by strong but short range antiferromagnetic interactions that lead to low temperature spin-glass freezing. It is demonstrated that ferromagnetic-like features, visible exclusively in layers grown at 200\circC and above, are associated with an interfacial mesh of metallic Co granules residing between the substrate and the (Zn,Co)O layer. This explains why the magnitude of ferromagnetic signal is virtually independent of the film thickness as well as elucidates the origin of magnetic anisotropy. Our conclusions have been derived for layers in which the Co concentration, distribution, and aggregation have been determined by: secondary-ion mass spectroscopy, electron probe micro-analysis, high-resolution transmission electron microscopy with capabilities allowing for chemical analysis; x-ray absorption near-edge structure; extended x-ray absorption fine-structure; x-ray photoemission spectroscopy, and x-ray circular magnetic dichroism. Macroscopic properties of these layers have been investigated by superconducting quantum interference device magnetometery and microwave dielectric losses allowing to confirm the important role of metallic inclusions.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Thickness dependence of magnetic properties of (Ga,Mn)As

We report on a monotonic reduction of Curie temperature in dilute ferromagnetic semiconductor (Ga,Mn)As upon a well controlled chemical-etching/oxidizing thinning from 15 nm down to complete removal of the ferro- magnetic response. The effect already starts at the very beginning of the thinning process and is accompanied by the spin reorientation transition of the in-plane uniaxial anisotropy. We postulate that a negative gradient along the growth direction of self-compensating defects (Mn interstitial) and the presence of surface donor traps gives quantitative account on these effects within the p-d mean field Zener model with adequate mod- ifications to take a nonuniform distribution of holes and Mn cations into account. The described here effects are of practical importance for employing thin and ultrathin layers of (Ga,Mn)As or relative compounds in concept spintronics devices, like resonant tunneling devices in particular.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Experimental probing of exchange interactions between localized spins in the dilute magnetic insulator (Ga,Mn)N

The sign, magnitude, and range of the exchange couplings between pairs of Mn ions is determined for (Ga,Mn)N and (Ga,Mn)N:Si with x < 3%. The samples have been grown by metalorganic vapor phase epitaxy and characterized by secondary-ion mass spectroscopy; high-resolution transmission electron microscopy with capabilities allowing for chemical analysis, including the annular dark-field mode and electron energy loss spectroscopy; high-resolution and synchrotron x-ray diffraction; synchrotron extended x-ray absorption fine-structure; synchrotron x-ray absorption near-edge structure; infra-red optics and electron spin resonance. The results of high resolution magnetic measurements and their quantitative interpretation have allowed to verify a series of ab initio predictions on the possibility of ferromagnetism in dilute magnetic insulators and to demonstrate that the interaction changes from ferromagnetic to antiferromagnetic when the charge state of the Mn ions is reduced from 3+ to 2+.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Properties and characterization of ALD grown dielectric oxides for MIS structures

We report on an extensive structural and electrical characterization of under-gate dielectric oxide insulators Al2O3 and HfO2 grown by Atomic Layer Deposition (ALD). We elaborate the ALD growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evaporation to complete the Metal-Insulator-Semiconductor structure. Our best devices survive energizing up to ~3 MV/cm at 77 K with the leakage current staying below the state-of-the-art level of 1 nA. At these conditions the displaced charge corresponds to a change of the sheet carrier density of 3 \times 1013 cm-2, what promises an effective modulation of the micromagnetic properties in diluted ferromagnetic semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Quantum effects in linear and non-linear transport of T-shaped ballistic junction

We report low-temperature transport measurements of three-terminal T-shaped device patterned from GaAs/AlGaAs heterostructure. We demonstrate the mode branching and bend resistance effects predicted by numerical modeling for linear conductance data. We show also that the backscattering at the junction area depends on the wave function parity. We find evidence that in a non-linear transport regime the voltage of floating electrode always increases as a function of push-pull polarization. Such anomalous effect occurs for the symmetric device, provided the applied voltage is less than the Fermi energy in equilibrium.

0 citations0 reviewsNo code linkedOpen access