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Researcher profile

R. Jakiela

R. Jakiela contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.dis-nncond-mat.supr-con

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Published work

7 published item(s)

preprint2013arXiv

ALD grown zinc oxide with controllable electrical properties

The paper presents results for zinc oxide films grown at low temperature regime by Atomic Layer Deposition (ALD). We discuss electrical properties of such films and show that low temperature deposition results in oxygen-rich ZnO layers in which free carrier concentration is very low. For optimized ALD process it can reach the level of 10^15 cm-3, while mobility of electrons is between 20 and 50 cm2/Vs. Electrical parameters of ZnO films deposited by ALD at low temperature regime are appropriate for constructing of the ZnO-based p-n and Schottky junctions. We demonstrate that such junctions are characterized by the rectification ratio high enough to fulfill requirements of 3D memories and are deposited at temperature 100degC which makes them appropriate for deposition on organic substrates.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Phase diagram and critical behavior of the random ferromagnet $Ga_{1-x}Mn_xN$

Molecular beam epitaxy has been employed to obtain Ga1-xMnxN films with x up to 10% and Curie temperatures T_C up to 13 K. The magnitudes of T_C and their dependence on x, T_C(x) ~ x^m, where m = 2.2 +/- 0.2 are quantitatively described by a tight binding model of superexchange interactions and Monte Carlo simulations of T_C. The critical behavior of this dilute magnetic insulator shows strong deviations from the magnetically clean case (x = 1), in particular, (i) an apparent breakdown of the Harris criterion; (ii) a non-monotonic crossover in the values of the susceptibility critical exponent gamma_eff between the high temperature and critical regimes, and (iii) a smearing of the critical region, which can be explained either by the Griffiths effects or by macroscopic inhomogeneities in the spin distribution with a variance Delta x = (0.2 +/- 0.1)%.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Experimental probing of exchange interactions between localized spins in the dilute magnetic insulator (Ga,Mn)N

The sign, magnitude, and range of the exchange couplings between pairs of Mn ions is determined for (Ga,Mn)N and (Ga,Mn)N:Si with x < 3%. The samples have been grown by metalorganic vapor phase epitaxy and characterized by secondary-ion mass spectroscopy; high-resolution transmission electron microscopy with capabilities allowing for chemical analysis, including the annular dark-field mode and electron energy loss spectroscopy; high-resolution and synchrotron x-ray diffraction; synchrotron extended x-ray absorption fine-structure; synchrotron x-ray absorption near-edge structure; infra-red optics and electron spin resonance. The results of high resolution magnetic measurements and their quantitative interpretation have allowed to verify a series of ab initio predictions on the possibility of ferromagnetism in dilute magnetic insulators and to demonstrate that the interaction changes from ferromagnetic to antiferromagnetic when the charge state of the Mn ions is reduced from 3+ to 2+.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Puzzling magneto-optical properties of ZnMnO films

Optical and magneto-optical properties of ZnMnO films grown at low temperature by Atomic Layer Deposition are discussed. A strong polarization of excitonic photoluminescence is reported, surprisingly observed without splitting or spectral shift of excitonic transitions. Present results suggest possibility of Mn recharging in ZnO lattice. Strong absorption, with onset at about 2.1 eV, is related to Mn 2+ to 3+ photo-ionization. We propose that the observed strong circular polarization of excitonic emission is of a similar character as the one observed by us for ZnSe:Cr.

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preprint2011arXiv

Role of interface in ferromagnetism of (Zn,Co)O films

We demonstrate that room temperature ferromagnetic response (RT FR) of ZnCoO films grown at low temperature by the Atomic layer Deposition (ALD) method is due to Co metal accumulations at the ZnCoO/substrate interface region. The accumulated experimental evi evidences allow us to reject several other explanations of this effect in our samples, despite the fact that some of them are likely to be responsible for the low temperature FM in this class of the material.

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preprint2011arXiv

ZnCoO Films by Atomic Layer Deposition - influence of a growth temperature on uniformity of cobalt distribution

We report on the structural, electrical and magnetic properties of ZnCoO thin films grown by Atomic Layer Deposition (ALD) method using reactive organic precursors of zinc and cobalt. As a zinc precursor we applied either dimethylzinc or diethylzinc and cobalt (II) acetyloacetonate as a cobalt precursor. The use of these precursors allowed us the significant reduction of a growth temperature to 300oC and below, which proved to be very important for the growth of uniform films of ZnCoO. Structural, electrical and magnetic properties of the obtained ZnCoO layers will be discussed based on the results of SIMS, SEM, EDS, XRD, AFM, Hall effect and SQUID investigations.

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preprint2010arXiv

Contact superconductivity in In-PbTe junctions

The authors report on electron transport studies on superconductor-semiconductor hybrid structures of indium and n-type lead telluride, either in the form of quantum wells or bulk crystals. In-PbTe contacts form by spontaneous alloying, which occurs already at room temperature. The alloyed phase penetrates deeply into PbTe and forms metallic contacts even in the presence of depletion layers at the semiconductor surface. Although the detailed structure of this phase is unknown, we observe that it exhibits a superconducting transition at temperatures below 10 K. This causes such substantial reduction of the contact resistances that they even become comparable to those predicted for ideal superconductor-normal conductor contacts. Most importantly, this result indicates that the interface phase in the superconducting state becomes nearly homogeneous - in contrast to the structure expected for alloyed contacts. We suggest that the unusual interface superconductivity is linked to the unique properties of PbTe, namely, its huge static dielectric constant. Apparently the alloyed interface phase contains superconducting precipitates randomly distributed within the depletion layers, and their Coulomb charging energies are extremely small. According to the existing models of the granular superconductivity, even very weak Josephson coupling between the neighboring precipitates gives rise to the formation of a global superconducting phase which explains our observations.

0 citations0 reviewsNo code linkedOpen access