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D. S. Ivanov

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cond-mat.mes-hall cond-mat.mtrl-sci physics.app-ph physics.optics

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preprint2019arXiv

Influence of surface plasmon polaritons on laser energy absorption and structuring of surfaces

The accurate calculation of laser energy absorption during femto- or picosecond laser pulse experiments is very important for the description of the formation of periodic surface structures. On a rough material surface, a crack or a step edge, ultrashort laser pulses can excite surface plasmon polaritons (SPP), i.e. surface plasmons coupled to a laser-electromagnetic wave. The interference of such plasmon wave and the incoming pulse leads to a periodic modulation of the deposited laser energy on the surface of the sample. In the present work, within the frames of a Two Temperature Model we propose the analytical form of the source term, which takes into account SPP excited at a step edge of a dielectric-metal interface upon irradiation of an ultrashort laser pulse at normal incidence. The influence of the laser pulse parameters on energy absorption is quantified for the example of gold. This result can be used for nanophotonic applications and for the theoretical investigation of the evolution of electronic and lattice temperatures and, therefore, of the formation of surfaces with predestined properties under controlled conditions.

preprint2014arXiv

Atomistic-continuum modeling of short laser pulse melting of Si targets

We present an atomistic-continuum model to simulate ultrashort laser-induced melting processes in semiconductor solids on the example of silicon. The kinetics of transient non-equilibrium phase transition mechanisms is addressed with a Molecular Dynamics method at atomic level, whereas the laser light absorption, strong generated electron-phonon non-equilibrium, fast diffusion and heat conduction due to photo-excited free carriers are accounted for in the continuum. We give a detailed description of the model, which is then applied to study the mechanism of short laser pulse melting of free standing Si films. The effect of laser-induced pressure and temperature of the lattice on the melting kinetics is investigated. Two competing melting mechanisms, heterogeneous and homogeneous, were identified. Apart of classical heterogeneous melting mechanism, the nucleation of the liquid phase homogeneously inside the material significantly contributes to the melting process. The simulations showed, that due to the open diamond structure of the crystal, the laser-generated internal compressive stresses reduce the crystal stability against the homogeneous melting. Consequently, the latter can take a massive character within several picoseconds upon the laser heating. Due to negative volume of melting of modeled Si material, -7.5%, the material contracts upon the phase transition, relaxes the compressive stresses and the subsequent melting proceeds heterogeneously until the excess of thermal energy is consumed. The threshold fluence value, at which homogeneous nucleation of liquid starts contributing to the classical heterogeneous propagation of the solid-liquid interface, is found from the series of simulations at different laser input fluences. On the example of Si, the laser melting kinetics of semiconductors was found to be noticeably different from that of metals with fcc crystal structure.