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B. Rethfeld

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Published work

7 published item(s)

preprint2022arXiv

Fundamentals of Scanning Surface Structuring by Ultrashort Laser Pulses: From Electron Diffusion to Final Morphology

Industrial use of ultrashort-pulse surface structuring would significantly increase by an effective utilization of the average laser powers available currently. However, the unexplained degradation of surfaces processed with numerous pulses at high average laser power makes this difficult. Based on a systematic experimental study, the structure formation underlying such surface degradation was investigated. We presented a hierarchical structural formation model that bridges the gap between laser-induced periodic surface structures and surface degradation. Contrary to expectations based on previous research, we observed less structure formation on titanium for high laser fluences. As a possible reason, enhanced electron diffusion with increasing intensity was investigated within the framework of the two-temperature model. Our findings provide a deeper understanding of the microscopic mechanisms involved in surface structuring with ultrashort pulses.

preprint2021arXiv

Influence of an external electric field on the energy dissipation at the initial stage of laser ablation

A density-dependent two-temperature model is applied to describe laser excitation and the following relaxation processes of silicon in an external electric field. Two approaches on how to describe the effects of the external electric field are presented. The first approach avoids the buildup of internal electric fields due to charge separation by assuming ambipolar diffusion and adds an additional carrier-pair current. In the second approach, electrons and holes are treated separately to account for charge separation and the resulting shielding of the external electric field inside the material. The two approaches are compared to experimental results. Both the first approach and the experimental results show similar tendencies for optimization of laser ablation in the external electric field.

preprint2019arXiv

Influence of surface plasmon polaritons on laser energy absorption and structuring of surfaces

The accurate calculation of laser energy absorption during femto- or picosecond laser pulse experiments is very important for the description of the formation of periodic surface structures. On a rough material surface, a crack or a step edge, ultrashort laser pulses can excite surface plasmon polaritons (SPP), i.e. surface plasmons coupled to a laser-electromagnetic wave. The interference of such plasmon wave and the incoming pulse leads to a periodic modulation of the deposited laser energy on the surface of the sample. In the present work, within the frames of a Two Temperature Model we propose the analytical form of the source term, which takes into account SPP excited at a step edge of a dielectric-metal interface upon irradiation of an ultrashort laser pulse at normal incidence. The influence of the laser pulse parameters on energy absorption is quantified for the example of gold. This result can be used for nanophotonic applications and for the theoretical investigation of the evolution of electronic and lattice temperatures and, therefore, of the formation of surfaces with predestined properties under controlled conditions.

preprint2014arXiv

Atomistic-continuum modeling of short laser pulse melting of Si targets

We present an atomistic-continuum model to simulate ultrashort laser-induced melting processes in semiconductor solids on the example of silicon. The kinetics of transient non-equilibrium phase transition mechanisms is addressed with a Molecular Dynamics method at atomic level, whereas the laser light absorption, strong generated electron-phonon non-equilibrium, fast diffusion and heat conduction due to photo-excited free carriers are accounted for in the continuum. We give a detailed description of the model, which is then applied to study the mechanism of short laser pulse melting of free standing Si films. The effect of laser-induced pressure and temperature of the lattice on the melting kinetics is investigated. Two competing melting mechanisms, heterogeneous and homogeneous, were identified. Apart of classical heterogeneous melting mechanism, the nucleation of the liquid phase homogeneously inside the material significantly contributes to the melting process. The simulations showed, that due to the open diamond structure of the crystal, the laser-generated internal compressive stresses reduce the crystal stability against the homogeneous melting. Consequently, the latter can take a massive character within several picoseconds upon the laser heating. Due to negative volume of melting of modeled Si material, -7.5%, the material contracts upon the phase transition, relaxes the compressive stresses and the subsequent melting proceeds heterogeneously until the excess of thermal energy is consumed. The threshold fluence value, at which homogeneous nucleation of liquid starts contributing to the classical heterogeneous propagation of the solid-liquid interface, is found from the series of simulations at different laser input fluences. On the example of Si, the laser melting kinetics of semiconductors was found to be noticeably different from that of metals with fcc crystal structure.

preprint2014arXiv

Driving ferromagnets into a critical region of a magnetic phase diagram

Exciting a ferromagnetic sample with an ultrashort laser pulse leads to a quenching of the magne- tization on a subpicosecond timescale. On the basis of the equilibration of intensive thermodynamic variables we establish a powerful model to describe the demagnetization dynamics. We demonstrate that the magnetization dynamics is mainly driven by the equilibration of chemical potentials. The minimum of magnetization is revealed as a transient electronic equilibrium state. Our method iden- tifies the slowing down of ultrafast magnetization dynamics by a critical region within a magnetic phase diagram.

preprint2014arXiv

Laser damage in silicon: energy absorption, relaxation and transport

Silicon irradiated with an ultrashort 800 nm-laser pulse is studied theoretically using a two temperature description that considers the transient free carrier density during and after irradiation. A Drude model is implemented to account for the highly transient optical parameters. We analyze the importance of considering these density-dependent parameters as well as the choice of the Drude collision frequency. In addition, degeneracy and transport effects are investigated. The importance of each of these processes for resulting calculated damage thresholds is studied.We report damage thresholds calculations that are in very good agreement with experimental results over a wide range of pulse durations.

preprint2011arXiv

Driving Force of Ultrafast Magnetization Dynamics

Irradiating a ferromagnetic material with an ultrashort laser pulse leads to demagnetization on a femtosecond timescale. We implement Elliott-Yafet type spin-flip scattering, mediated by electron-electron and electron-phonon collisions, into the framework of a spin-resolved Boltzmann equation. Considering three mutually coupled reservoirs, (i) spin-up electrons, (ii) spin-down electrons and (iii) phonons, we trace non-equilibrium electron distributions during and after laser excitation. We identify the driving force for ultrafast magnetization dynamics as the equilibration of temperatures and chemical potentials between the electronic subsystems. This principle can be used to easily predict the maximum quenching of magnetization upon ultrashort laser irradiation in any material, as we show for the example of 3d-ferromagnetic nickel.