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D. Marre'

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Published work

6 published item(s)

preprint2016arXiv

Large phonon-drag enhancement induced by narrow quantum confinement at the LaAlO3/SrTiO3 interface

The thermoelectric power of the two-dimensional electron system (2DES) at the LaAlO3/SrTiO3 interface is explored below room temperature, in comparison with that of Nb-doped SrTiO3 single crystals. For the interface we find a region below T =50 K where thermopower is dominated by phonon-drag, whose amplitude is hugely amplified with respect to the corresponding bulk value, reaching values ~mV/K and above. The phonon-drag enhancement at the interface is traced back to the tight carrier confinement of the 2DES, and represents a sharp signature of strong electron-acoustic phonon coupling at the interface.

preprint2016arXiv

Thermoelectric behavior of Ruddlesden-Popper series iridates

The goal of this work is studying the evolution of thermoelectric transport across the members of the Ruddlesden-Popper series iridates Srn+1IrnO3n+1, where a metal-insulator transition driven by bandwidth change occurs, from the strongly insulating Sr2IrO4 to the metallic non Fermi liquid behavior of SrIrO3. Sr2IrO4 (n=1), Sr3Ir2O7 (n=2) and SrIrO3 (n=inf.) polycrystals are synthesized at high pressure and characterized by structural, magnetic, electric and thermoelectric transport analyses. We find a complex thermoelectric phenomenology in the three compounds. Thermal diffusion of charge carriers accounts for the Seebeck behavior of Sr2IrO4, whereas additional drag mechanisms come into play in determining the Seebeck temperature dependence of Sr3Ir2O7 and SrIrO3. These findings reveal close relationship between magnetic, electronic and thermoelectric properties, strong coupling of charge carriers with phonons and spin fluctuations as well as relevance of multiband description in these compounds.

preprint2010arXiv

Seebeck effect in the conducting LaAlO_{3}/SrTiO_{3} interface

The observation of metallic behavior at the interface between insulating oxides has triggered worldwide efforts to shed light on the physics of these systems and clarify some still open issues, among which the dimensional character of the conducting system. In order to address this issue, we measure electrical transport (Seebeck effect, Hall effect and conductivity) in LaAlO_{3}/SrTiO_{3} interfaces and, for comparison, in a doped SrTiO_{3} bulk single crystal. In these experiments, the carrier concentration is tuned, using the field effect in a back gate geometry. The combined analysis of all experimental data at 77 K indicates that the thickness of the conducting layer is ~7 nm and that the Seebeck effect data are well described by a two-dimensional (2D) density of states. We find that the back gate voltage is effective in varying not only the charge density, but also the thickness of the conducting layer, which is found to change by a factor of ~2, using an electric field between -4 and +4MV/m at 77K. No enhancement of the Seebeck effect due to the electronic confinement and no evidence for two-dimensional quantization steps are observed at the interfaces.

preprint2009arXiv

High quality epitaxial FeSe0.5Te0.5 thin films grown on SrTiO3 substrates by pulsed laser deposition

Superconducting epitaxial FeSe0.5Te0.5 thin films were prepared on SrTiO3 (001) substrates by pulsed laser deposition. The high purity of the phase, the quality of the growth and the epitaxy were studied with different experimental techniques: X-rays diffraction, reflection high energy electron diffraction, scanning tunnelling microscopy and atomic force microscopy. The substrate temperature during the deposition was found to be the main parameter governing sample morphology and superconducting critical temperature. Films obtained in the optimal conditions show an epitaxial growth with c axis perpendicular to the film surface and the a and b axis parallel to the substrates one, without the evidence of any other orientation. Moreover, such films show a metallic behavior over the whole measured temperature range and critical temperature above 17K, which is higher than the target one.

preprint2009arXiv

Tc=21K in epitaxial FeSe0.5Te0.5 thin films with biaxial compressive strain

High purity epitaxial FeSe0.5Te0.5 thin films with different thickness were grown by Pulsed Laser Ablation on different substrates. By varying the film thickness, Tc up to 21K were observed, significantly larger than the bulk value. Structural analyses indicated that the a axis changes significantly with the film thickness and is linearly related to the Tc. The latter result indicates the important role of the compressive strain in enhancing Tc. Tc is also related to both the Fe-(Se,Te) bond length and angle, suggesting the possibility of further enhancement.

preprint2006arXiv

Effects of neutron irradiation on polycrystalline Mg11B2

We studied the influence of the disorder introduced in polycrystalline MgB2 samples by neutron irradiation. To circumvent self shielding effects due to the strong interaction between thermal neutrons and 10B we employed isotopically enriched 11B which contains 40 times less 10B than natural B. The comparison of electrical and structural properties of different series of samples irradiated in different neutron sources, also using Cd shields, allowed us to conclude that, despite the low 10B content, the main damage mechanisms are caused by thermal neutrons, whereas fast neutrons play a minor role. Irradiation leads to an improvement in both upper critical field and critical current density for an exposure level in the range 1-2x1018 cm-2. With increasing fluence the superconducting properties are depressed. An in-depth analysis of the critical field and current density behaviour has been carried out to identify what scattering and pinning mechanisms come into play. Finally the correlation between some characteristic lengths and the transition widths is analysed.