Researcher profile

A. Gerbi

A. Gerbi contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2015arXiv

Noncontact dissipation reveals critical central peak in SrTiO3

The critical fluctuations at second order structural transitions in a bulk crystal may affect the dissipation of mechanical probes even if completely external to the crystal surface. Here we show that noncontact force microscope dissipation bears clear evidence of the antiferrodistortive phase transition of SrTiO3, known for a long time to exhibit a unique, extremely narrow neutron scattering "central peak". The noncontact geometry suggests a central peak linear response coupling connected with strain. The detailed temperature dependence reveals for the first time the intrinsic central peak width of order 80 kHz, two orders of magnitude below the established neutron upper bound.

preprint2009arXiv

High quality epitaxial FeSe0.5Te0.5 thin films grown on SrTiO3 substrates by pulsed laser deposition

Superconducting epitaxial FeSe0.5Te0.5 thin films were prepared on SrTiO3 (001) substrates by pulsed laser deposition. The high purity of the phase, the quality of the growth and the epitaxy were studied with different experimental techniques: X-rays diffraction, reflection high energy electron diffraction, scanning tunnelling microscopy and atomic force microscopy. The substrate temperature during the deposition was found to be the main parameter governing sample morphology and superconducting critical temperature. Films obtained in the optimal conditions show an epitaxial growth with c axis perpendicular to the film surface and the a and b axis parallel to the substrates one, without the evidence of any other orientation. Moreover, such films show a metallic behavior over the whole measured temperature range and critical temperature above 17K, which is higher than the target one.

preprint2009arXiv

Tc=21K in epitaxial FeSe0.5Te0.5 thin films with biaxial compressive strain

High purity epitaxial FeSe0.5Te0.5 thin films with different thickness were grown by Pulsed Laser Ablation on different substrates. By varying the film thickness, Tc up to 21K were observed, significantly larger than the bulk value. Structural analyses indicated that the a axis changes significantly with the film thickness and is linearly related to the Tc. The latter result indicates the important role of the compressive strain in enhancing Tc. Tc is also related to both the Fe-(Se,Te) bond length and angle, suggesting the possibility of further enhancement.