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Researcher profile

D. M. Glowacka

D. M. Glowacka contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.ins-detcond-mat.mtrl-sciastro-ph.IMcond-mat.mes-hall

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Published work

5 published item(s)

preprint2014arXiv

A Fabrication Route for Arrays of Ultra-low-Noise MoAu Transition Edge Sensors on Thin Silicon Nitride for Space Applications

We describe a process route to fabricate arrays of Ultra-low-Noise MoAu Transition Edge Sensors (TESs). The low thermal conductance required for space applications is achieved using 200 nm-thick Silicon Nitride (SiNx ) patterned to form long-thin legs with widths of 2.1 μm. Using bilayers formed on SiNx islands from films with 40 nm-thick Mo and Au thicknesses in the range 30 to 280 nm deposited by dc-sputtering in ultra-high vacuum we can obtain tunable transition temperatures in the range 700 to 70 mK. The sensors use large-area absorbers fabricated from high resistivity, thin-film beta-phase Ta to provide impedance-matching to incident radiation. The absorbers are patterned to reduce the heat capacity associated with the nitride support structure and include Au thermalizing features to assist the heat flow into the TES. Arrays of 400 detectors at the pixel spacing required for the long-wavelength band of the far-infrared instrument SAFARI are now being fabricated. Device yields approaching 99% are achieved.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Development of a NbN Deposition Process for Superconducting Quantum Sensors

We have carried out a detailed programme to explore the superconducting characteristics of reactive DC-magnetron sputtered NbN. The basic principle is to ignite a plasma using argon, and then to introduce a small additional nitrogen flow to achieve the nitridation of a Nb target. Subsequent sputtering leads to the deposition of NbN onto the host substrate. The characteristics of a sputtered film depend on a number of parameters: argon pressure, nitrogen flow rate and time-evolution profile, substrate material, etc. Crucially, the hysteresis in the target voltage as a function of the nitrogen flow can be used to provide a highly effective monitor of nitrogen consumption during the reactive process. By studying these dependencies we have been able to achieve highly reproducible film characteristics on sapphire, silicon dioxide on silicon, and silicon nitride on silicon. Intrinsic film stress was minimised by optimising the argon pressure, giving NbN films having Tc = 14.65 K. In the paper, we report characteristics such as deposition rate, Residual Resistance Ratio (RRR), film resistivity, transition temperature, and stress, as a function of deposition conditions. In order to enhance our understanding of the microwave properties of the films, we fabricated a wide range of microstrip NbN resonators (half wavelength, quarter wavelength, ring resonators). In the paper, we provide an illustrative result from this work showing a 2.1097 GHz resonator having a Q of 15,962 at 3.3 K.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Development of a NbN Deposition Process for Superconducting Quantum Sensors

We have carried out a detailed programme to explore the superconducting characteristics of reactive DC-magnetron sputtered NbN. The basic principle is to ignite a plasma using argon, and then to introduce a small additional nitrogen flow to achieve the nitridation of a Nb target. Subsequent sputtering leads to the deposition of NbN onto the host substrate. The characteristics of a sputtered film depend on a number of parameters: argon pressure, nitrogen flow rate and time-evolution profile, substrate material, etc. Crucially, the hysteresis in the target voltage as a function of the nitrogen flow can be used to provide a highly effective monitor of nitrogen consumption during the reactive process. By studying these dependencies we have been able to achieve highly reproducible film characteristics on sapphire, silicon dioxide on silicon, and silicon nitride on silicon. Intrinsic film stress was minimised by optimising the argon pressure, giving NbN films having Tc = 14.65 K. In the paper, we report characteristics such as deposition rate, Residual Resistance Ratio (RRR), film resistivity, transition temperature, and stress, as a function of deposition conditions. In order to enhance our understanding of the microwave properties of the films, we fabricated a wide range of microstrip NbN resonators (half wavelength, quarter wavelength, ring resonators). In the paper, we provide an illustrative result from this work showing a 2.1097 GHz resonator having a Q of 15,962 at 3.3 K.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Towards Ultra-Low-NoiseMoAu Transition Edge Sensors

We report initial measurements on our firstMoAu Transition Edge Sensors (TESs). The TESs formed from a bilayer of 40 nm of Mo and 106 nm of Au showed transition temperatures of about 320 mK, higher than identical TESs with a MoCu bilayer which is consistent with a reduced electron transmission coefficient between the bilayer films. We report measurements of thermal conductance in the 200 nm thick silicon nitride SiNx support structures at this temperature, TES dynamic behaviour and current noise measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Transition Edge Sensor Thermometry for On-chip Materials Characterization

The next generation of ultra-low-noise cryogenic detectors for space science applications require continued exploration of materials characteristics at low temperatures. The low noise and good energy sensitivity of current Transition Edge Sensors (TESs) permits measurements of thermal parameters of mesoscopic systems with unprecedented precision. We describe a radiometric technique for differential measurements of materials characteristics at low temperatures (below about 3K). The technique relies on the very broadband thermal radiation that couples between impedance-matched resistors that terminate a Nb superconducting microstrip and the power exchanged is measured using a TES. The capability of the TES to deliver fast, time-resolved thermometry further expands the parameter space: for example to investigate time-dependent heat capacity. Thermal properties of isolated structures can be measured in geometries that eliminate the need for complicating additional components such as the electrical wires of the thermometer itself. Differential measurements allow easy monitoring of temperature drifts in the cryogenic environment. The technique is rapid to use and easily calibrated. Preliminary results will be discussed.

0 citations0 reviewsNo code linkedOpen access