Researcher profile

G. Yassin

G. Yassin contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
7works
0followers
5topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

7 published item(s)

preprint2014arXiv

Development of a NbN Deposition Process for Superconducting Quantum Sensors

We have carried out a detailed programme to explore the superconducting characteristics of reactive DC-magnetron sputtered NbN. The basic principle is to ignite a plasma using argon, and then to introduce a small additional nitrogen flow to achieve the nitridation of a Nb target. Subsequent sputtering leads to the deposition of NbN onto the host substrate. The characteristics of a sputtered film depend on a number of parameters: argon pressure, nitrogen flow rate and time-evolution profile, substrate material, etc. Crucially, the hysteresis in the target voltage as a function of the nitrogen flow can be used to provide a highly effective monitor of nitrogen consumption during the reactive process. By studying these dependencies we have been able to achieve highly reproducible film characteristics on sapphire, silicon dioxide on silicon, and silicon nitride on silicon. Intrinsic film stress was minimised by optimising the argon pressure, giving NbN films having Tc = 14.65 K. In the paper, we report characteristics such as deposition rate, Residual Resistance Ratio (RRR), film resistivity, transition temperature, and stress, as a function of deposition conditions. In order to enhance our understanding of the microwave properties of the films, we fabricated a wide range of microstrip NbN resonators (half wavelength, quarter wavelength, ring resonators). In the paper, we provide an illustrative result from this work showing a 2.1097 GHz resonator having a Q of 15,962 at 3.3 K.

preprint2014arXiv

Development of a NbN Deposition Process for Superconducting Quantum Sensors

We have carried out a detailed programme to explore the superconducting characteristics of reactive DC-magnetron sputtered NbN. The basic principle is to ignite a plasma using argon, and then to introduce a small additional nitrogen flow to achieve the nitridation of a Nb target. Subsequent sputtering leads to the deposition of NbN onto the host substrate. The characteristics of a sputtered film depend on a number of parameters: argon pressure, nitrogen flow rate and time-evolution profile, substrate material, etc. Crucially, the hysteresis in the target voltage as a function of the nitrogen flow can be used to provide a highly effective monitor of nitrogen consumption during the reactive process. By studying these dependencies we have been able to achieve highly reproducible film characteristics on sapphire, silicon dioxide on silicon, and silicon nitride on silicon. Intrinsic film stress was minimised by optimising the argon pressure, giving NbN films having Tc = 14.65 K. In the paper, we report characteristics such as deposition rate, Residual Resistance Ratio (RRR), film resistivity, transition temperature, and stress, as a function of deposition conditions. In order to enhance our understanding of the microwave properties of the films, we fabricated a wide range of microstrip NbN resonators (half wavelength, quarter wavelength, ring resonators). In the paper, we provide an illustrative result from this work showing a 2.1097 GHz resonator having a Q of 15,962 at 3.3 K.

preprint2012arXiv

A blind detection of a large, complex, Sunyaev--Zel'dovich structure

We present an interesting Sunyaev-Zel'dovich (SZ) detection in the first of the Arcminute Microkelvin Imager (AMI) 'blind', degree-square fields to have been observed down to our target sensitivity of 100μJy/beam. In follow-up deep pointed observations the SZ effect is detected with a maximum peak decrement greater than 8 \times the thermal noise. No corresponding emission is visible in the ROSAT all-sky X-ray survey and no cluster is evident in the Palomar all-sky optical survey. Compared with existing SZ images of distant clusters, the extent is large (\approx 10') and complex; our analysis favours a model containing two clusters rather than a single cluster. Our Bayesian analysis is currently limited to modelling each cluster with an ellipsoidal or spherical beta-model, which do not do justice to this decrement. Fitting an ellipsoid to the deeper candidate we find the following. (a) Assuming that the Evrard et al. (2002) approximation to Press & Schechter (1974) correctly gives the number density of clusters as a function of mass and redshift, then, in the search area, the formal Bayesian probability ratio of the AMI detection of this cluster is 7.9 \times 10^4:1; alternatively assuming Jenkins et al. (2001) as the true prior, the formal Bayesian probability ratio of detection is 2.1 \times 10^5:1. (b) The cluster mass is MT,200 = 5.5+1.2\times 10^14h-1M\odot. (c) Abandoning a physical model with num- -1.3 70 ber density prior and instead simply modelling the SZ decrement using a phenomenological β-model of temperature decrement as a function of angular distance, we find a central SZ temperature decrement of -295+36 μK - this allows for CMB primary anisotropies, receiver -15 noise and radio sources. We are unsure if the cluster system we observe is a merging system or two separate clusters.

preprint2009arXiv

HARP/ACSIS: A submillimetre spectral imaging system on the James Clerk Maxwell Telescope

This paper describes a new Heterodyne Array Receiver Programme (HARP) and Auto-Correlation Spectral Imaging System (ACSIS) that have recently been installed and commissioned on the James Clerk Maxwell Telescope (JCMT). The 16-element focal-plane array receiver, operating in the submillimetre from 325 to 375 GHz, offers high (three-dimensional) mapping speeds, along with significant improvements over single-detector counterparts in calibration and image quality. Receiver temperatures are $\sim$120 K across the whole band and system temperatures of $\sim$300K are reached routinely under good weather conditions. The system includes a single-sideband filter so these are SSB figures. Used in conjunction with ACSIS, the system can produce large-scale maps rapidly, in one or more frequency settings, at high spatial and spectral resolution. Fully-sampled maps of size 1 square degree can be observed in under 1 hour. The scientific need for array receivers arises from the requirement for programmes to study samples of objects of statistically significant size, in large-scale unbiased surveys of galactic and extra-galactic regions. Along with morphological information, the new spectral imaging system can be used to study the physical and chemical properties of regions of interest. Its three-dimensional imaging capabilities are critical for research into turbulence and dynamics. In addition, HARP/ACSIS will provide highly complementary science programmes to wide-field continuum studies, and produce the essential preparatory work for submillimetre interferometers such as the SMA and ALMA.

preprint2008arXiv

Waveguide-to-planar circuit transition for millimetre-wave detectors

We present a novel design of a waveguide to microstrip or coplanar waveguide transition using a unilateral finline taper. The transition from the unilateral finline mode to the TEM microstrip mode is done directly, avoiding the antipodal finline tapers that have commonly been employed. This results in significant simplification of the design and fabrication, and shortening of the chip length, thereby reducing insertion loss. In this paper we shall present designs at 90 GHz that can be employed in superconducting tunnel junction mixers or Transition Edge Sensor bolometers, and scale-model measurements at 15 GHz.

preprint2007arXiv

Compact broadband planar orthomode transducer

We present the design and test results of a compact C-band orthomode transducer which comprises four rectangular probes orthogonally arranged in a circular waveguide, designed to work in the WG13 band. Measurements of the system in the frequency range 4.64 GHz to 7.05 GHz agree very well with simulation results and show a cross-polarisation level below -58 dB, a return loss of about -20 dB, and an insertion loss difference of less than 0.18 dB between the orthogonal polarisation modes across the full waveguide band.