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D. Ksenzov

D. Ksenzov contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2026arXiv

Time-domain extreme ultraviolet diffuse scattering spectroscopy of nanoscale surface phonons

We report the observation of dynamic fringe patterns in the diffuse scattering of extreme ultraviolet light from surfaces, following femtosecond optical excitation. At each point on the detector, the diffuse scattering intensity exhibits oscillations at well-defined frequencies that correspond to surface phonons with wave vectors determined by the scattering geometry, indicating that the optical excitation generates coherent surface phonons propagating in all directions and spanning a wavelength range from 60 to 300 nm. This phenomenon is observed on a variety of samples, including single-layer and multilayer metal films, as well as bulk semiconductors. The measured surface phonon dispersions show good agreement with theoretical calculations. By comparing signal amplitudes from samples with different surface morphologies, we find that the excitation mechanism is linked to the natural surface roughness of the samples. However, the signal is still detectable on extremely smooth surfaces with sub-nanometer roughness. Our findings demonstrate a simple and effective method for optically exciting coherent surface phonons with nanoscale wavelengths on a wide range of solid samples and establish a foundation for surface phonon spectroscopy in a wave vector range well beyond the limit of conventional surface Brillouin scattering.

preprint2013arXiv

Time dependence of X-ray diffraction intensity of a crystal induced by an intense femtosecond X-ray pulse

The time evolution of the electron density and the resulting time dependence of X-ray diffraction peak intensity in a crystal irradiated by highly intense femtosecond pulses of an XFEL is investigated theoretically on the basis of rate equations for bound electrons and the Boltzmann equation for the kinetics of the unbound electron gas that plays an essential role in the time evolution of the electron density of a crystal. The photoionization, Auger process, electron-impact ionization, electron--electron scattering, and three-body recombination have been implemented in the system of rate equations. An algorithm for the numerical solution of the rate equations was simplified by incorporating analytical expressions for the cross sections of all the electron configurations in ions within the framework of the effective charge model. Using this approach we evaluate the time dependence of the inner shell population and electronic kinetic energy during the time of XFEL pulse propagation through the crystal for photon energies between 3 and 12 keV and a pulse width of 40 fs considering a flux of 10^12 ph/pulse (focusing on a spot size of ~ 1 mum^2, this flux corresponds to a fluence ranging between 0.6 and 1.6 mJ/mum^2). The time evolution of the atomic scattering factor and its fluctuation is numerically analyzed for the case of a Silicon crystal taking into account the decrease of the bound electron density during the pulse propagation. The time integrated intensity drops dramatically if the fluence of the XFEL pulse exceeds 1.6 mJ/mum^2.