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Researcher profile

A. Benediktovitch

A. Benediktovitch contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.acc-phphysics.atom-ph

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Published work

2 published item(s)

preprint2020arXiv

Design and Characteristics of a Population Inversion X-ray Laser Oscillator

Oscillators are at the heart of optical lasers, providing stable transform limited pulses. In contrast, X-ray free electron lasers use self-amplified spontaneous emission (SASE), resulting in large stochastic intensity and spectral fluctuations. Amplified spontaneous emission (ASE) of the $Kα_1$ line has been recently observed for Ne gas, Cu compounds and Mn solutions at the LCLS and SACLA X-ray free electron lasers (XFELs), using an X-ray SASE pulse as a pump to create population inversion. Here we describe the physics and realization of an X-ray laser oscillator (XLO) based on periodically pumping a Cu compound gain medium in a tunable Bragg cavity with a SASE pulse train, generating intense ($\sim$ 5 x 10$^{10}$ ph/pulse), fully coherent, transform limited 8 keV pulses with 48 meV spectral resolution. We also discuss extending these results to other elements to operate XLO from about 5 to 12 keV, improving X-ray-based research beyond current capabilities.

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preprint2013arXiv

Time dependence of X-ray diffraction intensity of a crystal induced by an intense femtosecond X-ray pulse

The time evolution of the electron density and the resulting time dependence of X-ray diffraction peak intensity in a crystal irradiated by highly intense femtosecond pulses of an XFEL is investigated theoretically on the basis of rate equations for bound electrons and the Boltzmann equation for the kinetics of the unbound electron gas that plays an essential role in the time evolution of the electron density of a crystal. The photoionization, Auger process, electron-impact ionization, electron--electron scattering, and three-body recombination have been implemented in the system of rate equations. An algorithm for the numerical solution of the rate equations was simplified by incorporating analytical expressions for the cross sections of all the electron configurations in ions within the framework of the effective charge model. Using this approach we evaluate the time dependence of the inner shell population and electronic kinetic energy during the time of XFEL pulse propagation through the crystal for photon energies between 3 and 12 keV and a pulse width of 40 fs considering a flux of 10^12 ph/pulse (focusing on a spot size of ~ 1 mum^2, this flux corresponds to a fluence ranging between 0.6 and 1.6 mJ/mum^2). The time evolution of the atomic scattering factor and its fluctuation is numerically analyzed for the case of a Silicon crystal taking into account the decrease of the bound electron density during the pulse propagation. The time integrated intensity drops dramatically if the fluence of the XFEL pulse exceeds 1.6 mJ/mum^2.

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