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D. G. Austing

D. G. Austing contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2025arXiv

Resonant Magneto-phonon Emission by Supersonic Electrons in Ultra-high Mobility Two-dimensional System

We investigate resonant acoustic phonon scattering in the magneto-resistivity of an ultra-high mobility two-dimensional electron gas system subject to DC current in the temperature range 10 mK to 3.9 K. For a DC current density of $\sim$1.1 A/m, the induced carrier drift velocity $v_{drift}$ becomes equal to the speed of sound $s \sim$ 3 km/s. When $v_{drift} \gtrsim s$ very strong resonant features with only weak temperature dependence are observed and identified as phonon-induced resistance oscillations at and above the &#34;sound barrier&#34;. Their behavior contrasts with that in the subsonic regime ($v_{drift} < s$) where resonant acoustic phonon scattering is strongly suppressed when the temperature is reduced unless amplified with quasi-elastic inter-Landau-level scattering. Our observations are compared to recent theoretical predictions from which we can extract a dimensionless electron-phonon coupling constant of $g^{2}$=0.0016 for the strong non-linear transport regime. We find evidence for a predicted oscillation phase change &#39; effect on traversing the &#34;sound barrier&#34;. Crossing the &#34;sound barrier&#34; fundamentally alters the resulting phonon emission processes, and the applied magnetic field results in pronounced and sharp resonant phonon emission due to Landau level quantization.

preprint2021arXiv

Electron g-factor determined for quantum dot circuit fabricated from (110)-oriented GaAs quantum well

The choice of substrate orientation for semiconductor quantum dot circuits offers opportunities for tailoring spintronic properties such as g-factors for specific functionality. In this letter, we demonstrate the operation of a few-electron double quantum dot circuit fabricated from a (110)-oriented GaAs quantum well. We estimate the in-plane electron g-factor from the profile of the enhanced inter-dot tunneling (leakage) current near zero magnetic field. Spin-blockade due to Pauli exclusion can block inter-dot tunneling. However, this blockade becomes inactive due to hyperfine interaction mediated spin flip-flop processes between electron spin states and the nuclear spin of the host material. The g-factor of absolute value ~0.1 found for a magnetic field parallel to the direction [11(bar)0], is approximately a factor of four lower than that for comparable circuits fabricated from material grown on widely-employed standard (001) GaAs substrates, and is in line with reported values determined by purely optical means for quantum well structures grown on (110) GaAs substrates.