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Researcher profile

D. Davidovic

D. Davidovic contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciquant-ph

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Published work

8 published item(s)

preprint2015arXiv

Exceptionally Strong Spin-Transfer in Single Ni Nanoparticles

This letter presents studies of spin-transfer efficiency in electron transport via discrete electron-in- a-box levels in individual nanometer-scale Ni particles at 0.06K temperature. In a strong magnetic field, the spin-transfer rates are estimated by measuring the amplitudes of the Zeeman splitting of the levels. We find that the spin- and the charge-transfer rates are comparable, demonstrating significant enhancement of the spin-transfer efficiency compared to that in larger magnets. In a low magnetic field, we find an additional energy splitting as evidence that the spin-transfer rate is far higher than the charge-transfer rate. The effect is explained in terms of the strong mesoscopic spin- orbit torques, which are exerted on the magnetization in response to sequential electron tunneling.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Minimum Anisotropy of a Magnetic Nanoparticle out of Equilibrium

In this article we study magnetotransport in single nanoparticles of Ni, Py=Ni$_{0.8}$Fe$_{0.2}$, Co, and Fe, with volumes $15\pm 6$nm$^3$, using sequential electron tunneling at 4.2K temperature. We measure current versus magnetic field in the ensembles of nominally the same samples, and obtain the abundances of magnetic hysteresis. The hysteresis abundance varies among the metals as Ni:Py:Co:Fe=4\,:50\,:100\,:100(\%), in good correlation with the magnetostatic and magnetocrystalline anisotropy. The abrupt change in the hysteresis abundance among these metals suggests a concept of minimum magnetic anisotropy required for magnetic hysteresis, which is found to be $\approx 13$meV. The minimum anisotropy is explained in terms of the residual magnetization noise arising from the spin-orbit torques generated by sequential electron tunneling. The magnetic hysteresis abundances are weakly dependent on the tunneling current through the nanoparticle, which we attribute to current dependent damping.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Voltage-Driven Spin-Transfer Torque in a Magnetic Particle

We discuss a spin-transfer torque device, where the role of the soft ferromagnetic layer is played by a magnetic particle or a magnetic molecule, in weak tunnel contact with two spin polarized leads. We investigate if the magnetization of the particle can be manipulated electronically, in the regime where the critical current for magnetization switching is negligibly weak, which could be due to the reduced particle dimensions. Using master equation simulations to evaluate the effects of spin-orbit anisotropy energy fluctuations on spin-transfer, we obtain reliable reading and writing of the magnetization state of such magnetic particle, and find that the device relies on a critical voltage rather than a critical current. The critical voltage is governed by the spin-orbit energy shifts of discrete levels in the particle. This finding opens a possibility to significantly reduce the power dissipation involved in spin-transfer torque switching, by using very small magnetic particles or molecules.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Replay to "Comment on 'Quantum phase for an arbitrary system with finite-dimensional Hilbert space'

We point out the crucial difference between the relative and absolute phase observables treated in our contribution \cite{1} and in the Comment by Hall and Pegg \cite{HP} respectively. The main contribution of our work is to show that the quantum expectation of the relative phase is highly discontinuous function of the frequency and to point out interesting dependence of the phase on the number-theoretic nature of the frequencies.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Vacuum Annealed Cu contacts for graphene electronics

We present transfer-length-method measurements of the contact resistance between Cu and graphene, and a method to significantly reduce the contact resistance by vacuum annealing. Even in samples with heavily contaminated contacts, the contacts display very low contact resistance post annealing. Due to the common use of Cu, and it's low chemical reactivity with graphene, thermal annealing will be important for future graphene devices requiring non-perturbing contacts with low contact resistance.

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preprint2010arXiv

Transport in Graphene Tunnel Junctions

We present a technique to fabricate tunnel junctions between graphene and Al and Cu, with a Si back gate, as well as a simple theory of tunneling between a metal and graphene. We map the differential conductance of our junctions versus probe and back gate voltage, and observe fluctuations in the conductance that are directly related to the graphene density of states. The conventional strong-suppression of the conductance at the graphene Dirac point can not be clearly demonstrated, but a more robust signature of the Dirac point is found: the inflection in the conductance map caused by the electrostatic gating of graphene by the tunnel probe. We present numerical simulations of our conductance maps, confirming the measurement results. In addition, Al causes strong n-doping of graphene, Cu causes a moderate p-doping, and in high resistance junctions, phonon resonances are observed, as in STM studies.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Localization and Capacitance Fluctuations in Disordered Au Nano-junctions

Nano-junctions, containing atomic-scale gold contacts between strongly disordered leads, exhibit different transport properties at room temperature and at low temperature. At room temperature, the nano-junctions exhibit conductance quantization effects. At low temperatures, the contacts exhibit Coulomb-Blockade. We show that the differences between the room-temperature and low temperature properties arise from the localization of electronic states in the leads. The charging energy and capacitance of the nano-junctions exhibit strong fluctuations with applied magnetic field at low temperature, as predicted theoretically.

0 citations0 reviewsNo code linkedOpen access
preprint2002arXiv

Electron Transport in Metallic Grains

We discuss electron transport in individual nanometer-scale metallic grains at dilution refrigerator temperatures. In the weak coupling regime, the grains exhibit Coulomb blockade and discrete energy levels. Electron-electron interactions lead to clustering and broadening of quasiparticle states. Magnetic field dependences of tunneling resonances directly reveal Kramers degeneracy and Lande g-factors. In grains of Au, which have strong spin-orbit interaction, g-factors are strongly suppressed from the free electron value. We have recently studied grains in the strong coupling regime. Coulomb blockade persists in this regime. It leads to a suppression in sample conductance at zero bias voltage at low temperatures. The conductance fluctuates with the applied magnetic field near zero bias voltage. We present evidence that the fluctuations are induced by electron spin. This paper reviews the evolving progress in interpreting these observations.

0 citations0 reviewsNo code linkedOpen access