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C. E. Malec

C. E. Malec appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2011arXiv

Electronic Properties of Clean Au-Graphene Contacts

The effects of Au grains on graphene conduction and doping are investigated in this report. To obtain a clean Au-graphene contact, Au grains are deposited over graphene at elevated temperature and in high vacuum, before any chemical processing. The bulk and the effective contact resistance versus gate voltage demonstrate that Au grains cause p-doping in graphene. The Fermi level shift is in agreement with first principles calculations, but the equilibrium separation we find between the graphene and the top-most Au layer is larger than predicted. Nonequilibrium electron transport displays giant-phonon thresholds observed in graphene tunnel junctions, demonstrating the tunneling nature of the contact, even though there are no dielectrics involved.

preprint2011arXiv

Evidence for incompressible states in a metal graphene tunnel junction in high magnetic field

We present transport measurements of tunnel junctions made between Cu and graphene in a magnetic field. We observe a transition to a Landau level like structure at high fields, as well as a set of sharp features in the tunneling spectra that shift with gate and tunnel probe voltage along the lines of constant charge density. We explain the sharp features with the formation of degeneracy split localized Landau levels, and addition of electrons to those levels one by one. A large capacitive coupling to the tunnel probe also increases the gate voltage spacing between the Landau levels.

preprint2011arXiv

Vacuum Annealed Cu contacts for graphene electronics

We present transfer-length-method measurements of the contact resistance between Cu and graphene, and a method to significantly reduce the contact resistance by vacuum annealing. Even in samples with heavily contaminated contacts, the contacts display very low contact resistance post annealing. Due to the common use of Cu, and it's low chemical reactivity with graphene, thermal annealing will be important for future graphene devices requiring non-perturbing contacts with low contact resistance.

preprint2010arXiv

Transport in Graphene Tunnel Junctions

We present a technique to fabricate tunnel junctions between graphene and Al and Cu, with a Si back gate, as well as a simple theory of tunneling between a metal and graphene. We map the differential conductance of our junctions versus probe and back gate voltage, and observe fluctuations in the conductance that are directly related to the graphene density of states. The conventional strong-suppression of the conductance at the graphene Dirac point can not be clearly demonstrated, but a more robust signature of the Dirac point is found: the inflection in the conductance map caused by the electrostatic gating of graphene by the tunnel probe. We present numerical simulations of our conductance maps, confirming the measurement results. In addition, Al causes strong n-doping of graphene, Cu causes a moderate p-doping, and in high resistance junctions, phonon resonances are observed, as in STM studies.

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