Researcher profile

D. Apalkov

D. Apalkov contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2016arXiv

Disruptive effect of Dzyaloshinskii-Moriya interaction on the MRAM cell performance

In order to increase the thermal stability of a magnetic random access memory (MRAM) cell, materials with high spin-orbit interaction are often introduced in the storage layer. As a side effect, a strong Dzyaloshinskii-Moriya interaction (DMI) may arise in such systems. Here we investigate the impact of DMI on the magnetic cell performance, using micromagnetic simulations. We find that DMI strongly promotes non-uniform magnetization states and non-uniform switching modes of the magnetic layer. It appears to be detrimental for both the thermal stability of the cell and its switching current, leading to considerable deterioration of the cell performance even for a moderate DMI amplitude.

preprint2015arXiv

A Dzyaloshinskii-Moriya Anisotropy in Nanomagnets with in-plane Magnetization

We report on a new source of in-plane anisotropy in nanomagnets due to the presence of Dzyaloshinskii-Moriya interaction (DMI). This anisotropy depends on the shape of the magnet, and is orthogonal to the demagnetization shape anisotropy. This effect originates from the DMI energy reduction due to an out-of-plane tilt of the spins at edges oriented perpendicular to the magnetization. Our investigation combining experimental, numerical and analytical results demonstrate that this energy reduction can compensate the demagnetization shape anisotropy energy in magnets of elongated shape, provided that their volumes is small enough and thus that their magnetization is quasi-uniform.

preprint2012arXiv

Matching domain wall configuration and spin-orbit torques for very efficient domain-wall motion

In our numerical study, we identify the best conditions for efficient domain wall motion by spin-orbit torques originating from the Spin Hall effect or Rashba effect. We demonstrate that the effect depends critically on the domain wall configuration, the current injection scheme and the symmetry of the spin-orbit torque. The best identified configuration corresponds to a Néel wall driven by spin Hall Effect in a narrow strip with perpendicular magnetic anisotropy. In this case, the domain wall velocity can be a factor of 10 larger than that for the conventional current-in-plane spin-transfer torque.