Researcher profile

M. Cubukcu

M. Cubukcu contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.other

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preprint2016arXiv

Disruptive effect of Dzyaloshinskii-Moriya interaction on the MRAM cell performance

In order to increase the thermal stability of a magnetic random access memory (MRAM) cell, materials with high spin-orbit interaction are often introduced in the storage layer. As a side effect, a strong Dzyaloshinskii-Moriya interaction (DMI) may arise in such systems. Here we investigate the impact of DMI on the magnetic cell performance, using micromagnetic simulations. We find that DMI strongly promotes non-uniform magnetization states and non-uniform switching modes of the magnetic layer. It appears to be detrimental for both the thermal stability of the cell and its switching current, leading to considerable deterioration of the cell performance even for a moderate DMI amplitude.

preprint2015arXiv

A Dzyaloshinskii-Moriya Anisotropy in Nanomagnets with in-plane Magnetization

We report on a new source of in-plane anisotropy in nanomagnets due to the presence of Dzyaloshinskii-Moriya interaction (DMI). This anisotropy depends on the shape of the magnet, and is orthogonal to the demagnetization shape anisotropy. This effect originates from the DMI energy reduction due to an out-of-plane tilt of the spins at edges oriented perpendicular to the magnetization. Our investigation combining experimental, numerical and analytical results demonstrate that this energy reduction can compensate the demagnetization shape anisotropy energy in magnets of elongated shape, provided that their volumes is small enough and thus that their magnetization is quasi-uniform.

preprint2013arXiv

Crossover from spin accumulation into interface states to spin injection in the germanium conduction band

Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this letter, we demonstrate a clear transition from spin accumulation into interface states to spin injection in the conduction band of $n$-Ge. We observe spin signal amplification at low temperature due to spin accumulation into interface states followed by a clear transition towards spin injection in the conduction band from 200 K up to room temperature. In this regime, the spin signal is reduced down to a value compatible with spin diffusion model. More interestingly, we demonstrate in this regime a significant modulation of the spin signal by spin pumping generated by ferromagnetic resonance and also by applying a back-gate voltage which are clear manifestations of spin current and accumulation in the germanium conduction band.

preprint2013arXiv

Spin Pumping and Inverse Spin Hall Effect in Germanium

We have measured the inverse spin Hall effect (ISHE) in \textit{n}-Ge at room temperature. The spin current in germanium was generated by spin pumping from a CoFeB/MgO magnetic tunnel junction in order to prevent the impedance mismatch issue. A clear electromotive force was measured in Ge at the ferromagnetic resonance of CoFeB. The same study was then carried out on several test samples, in particular we have investigated the influence of the MgO tunnel barrier and sample annealing on the ISHE signal. First, the reference CoFeB/MgO bilayer grown on SiO$_{2}$ exhibits a clear electromotive force due to anisotropic magnetoresistance and anomalous Hall effect which is dominated by an asymmetric contribution with respect to the resonance field. We also found that the MgO tunnel barrier is essential to observe ISHE in Ge and that sample annealing systematically lead to an increase of the signal. We propose a theoretical model based on the presence of localized states at the interface between the MgO tunnel barrier and Ge to account for these observations. Finally, all of our results are fully consistent with the observation of ISHE in heavily doped $n$-Ge and we could estimate the spin Hall angle at room temperature to be $\approx$0.001.

preprint2010arXiv

Effect of picosecond strain pulses on thin layers of the ferromagnetic semiconductor (Ga,Mn)(As,P)

The effect of picosecond acoustic strain pulses (ps-ASP) on a thin layer of (Ga,Mn)As co-doped with phosphorus was probed using magneto-optical Kerr effect (MOKE). A transient MOKE signal followed by low amplitude oscillations was evidenced, with a strong dependence on applied magnetic field, temperature and ps-ASP amplitude. Careful interferometric measurement of the layer's thickness variation induced by the ps-ASP allowed us to model very accurately the resulting signal, and interpret it as the strain modulated reflectivity (differing for $σ_{\pm}$ probe polarizations), independently from dynamic magnetization effects.