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Researcher profile

Czesław Skierbiszewski

Czesław Skierbiszewski contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.app-phcond-mat.mes-hallcond-mat.mtrl-sciphysics.optics

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Published work

4 published item(s)

preprint2022arXiv

Electrically pumped blue laser diodes with nanoporous bottom cladding

We demonstrate electrically pumped III-nitride edge-emitting laser diodes (LDs) with nanoporous bottom cladding. The LD structure was grown by plasma-assisted molecular beam epitaxy. Highly doped 350 nm thick GaN:Si cladding layer with Si concentration of 6 x 1019 cm-3 was electrochemically etched to obtain porosity of 15 +/- 3% with pore size of 20 +/- 9 nm. The devices with nanoporous bottom cladding are compared to the refer-ence structures. The pulse mode operation was obtained at 448.7 nm with a slope efficiency (SE) of 0.2 W/A while the reference device without etched cladding layer was lasing at 457 nm with SE of 0.56 W/A. The de-sign of the LDs with porous bottom cladding was modelled theoretically. Performed calculations allowed to choose the optimum porosity and thickness of the cladding needed for the desired optical mode confinement and reduced the risk of light leakage to the substrate and to the top-metal contact. This demonstration opens new possibilities for the fabrication of III-nitride LDs.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Impact of interfaces on photoluminescence efficiency of high indium content InGaN quantum wells

InGaN-based light emitting diodes (LEDs) are known to suffer from low electron and hole wavefunction overlap due to high piezoelectric field. Staggered InGaN quantum wells (QWs) have been proposed to increase the wavefunction overlap and improve the efficiency of LEDs especially for long wavelength emitters. In this work we evidence that the growth of staggered QWs has also another beneficial effect as it allows to reduce the formation of defects, responsible for nonradiative Shockley-Read-Hall recombination, at the bottom interface of the QW. Staggered QWs comprised an InGaN layer of an intermediate In content between the barrier and the QW. We show that insertion of such a layer results in a significant increase of the luminescence intensity, even if the calculated wavefunction overlap drops. We study the dependence of the thickness of such an intermediate In content layer on photoluminescence (PL) intensity behavior. Staggered QWs exhibit increased cathodoluminescence (CL) homogeneity that is a fingerprint of lower density of defects, in contrast to standard QWs for which high density of dark spots are observed in QW emission mapping. Transmission electron microscopy of standard QWs revealed formation of basal-plane stacking faults (BSFs) and voids that could have resulted from vacancy aggregation. Stepwise increase of the In content in staggered QWs prevents formation of point defects and results in an increased luminescence efficiency. The In composition difference between the barrier and the well is therefore a key parameter to control the formation of point defects in the high-In content QWs, influencing the luminescence efficiency.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Inhomogeneous broadening of optical transitions observed in photoluminescence and modulated reflectance of polar and non-polar InGaN quantum wells

In this work the broadening of interband transitions in InGaN/GaN quantum wells (QWs) resulting from structural inhomogeneities is analyzed. The role of polarization-induced electric field in the mechanism behind the inhomogeneous broadening observed in photoluminescence (PL) and electromodulated reflectance (ER) spectra of InGaN QWs dedicated to green/blue lasers is explained. Spectra of both polar and non-polar QWs are simulated within the random QW model distinguishing contributions of individual transitions taking into account QW inhomogeneities (QW width and indium content fluctuations). On this basis we interpret the ER and PL spectra measured for a polar multiple QW InGaN/GaN structure. The built-in electric field shifts the emission wavelength to red, and enhances the broadening of optical transitions. It is clearly shown that for polar QWs the Stokes shift can be easily overestimated if PL spectra are compared with ER spectra since the intensity of the fundamental transition observed in ER spectra significantly decreases with the increase in QW width. In this way ER signal related to excited states start to dominate. This effect is strongly enhanced by QW inhomogeneities.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes using UID GaN spacers

Recently, the use of bottom-TJ geometry in LEDs, which achieves N-polar-like alignment of polarization fields in conventional metal-polar orientations, has enabled enhancements in LED performance due to improved injection efficiency. Here, we elucidate the root causes behind the enhanced injection efficiency by employing mature laser diode structures with optimized heterojunction GaN/In$_{0.17}$Ga$_{0.83}$N/GaN TJs and UID GaN spacers to separate the optical mode from the heavily doped absorbing p-cladding regions. In such laser structures, polarization offsets at the electron blocking layer, spacer, and quantum barrier interfaces play discernable roles in carrier transport. By comparing a top-TJ structure to a bottom-TJ structure, and correlating features in the electroluminescence, capacitance-voltage, and current-voltage characteristics to unique signatures of the N- and Ga-polar polarization heterointerfaces in energy band diagram simulations, we identify that improved hole injection at low currents, and improved electron blocking at high currents, leads to higher injection efficiency and higher output power for the bottom-TJ device throughout 5 orders of current density (0.015 - 1000 A/cm$^2$). Moreover, even with the addition of a UID GaN spacer, differential resistances are state-of-the-art, below 7x10-4 $Ω$cm$^2$. These results highlight the virtues of the bottom-TJ geometry for use in high-efficiency laser diodes.

0 citations0 reviewsNo code linkedOpen access