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Cristina Cordoba

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cond-mat.mes-hall physics.app-ph physics.optics

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preprint2022arXiv

Coupling Perovskite Quantum Dot Pairs in Solution using Nanoplasmonic Assembly

Perovskite quantum dots (PQDs) provide a robust solution-based approach to efficient solar cells, bright light-emitting devices, and quantum sources of light. Quantifying heterogeneity and understanding coupling between dots is critical for these applications. We use double-nanohole optical trapping to size individual dots and correlate to emission energy shifts from quantum confinement. We were able to assemble a second dot in the trap, which allows us to observe the coupling between dots. We observe a systematic red-shift of 1.1 $\pm$ 0.6 meV in the emission wavelength. Theoretical analysis shows that the observed shift is consistent with resonant energy transfer and is unusually large due to moderate-to-large quantum confinement in PQDs. This demonstrates the promise of PQDs for entanglement in quantum information applications. This work enables future in situ control of PQD growth as well as studies of the coupling between small PQD assemblies with quantum information applications in mind.

preprint2020arXiv

Abrupt degenerately-doped silicon nanowire tunnel junctions

We have confirmed the presence of narrow, degenerately-doped axial silicon nanowire (SiNW) $p$-$n$ junctions via off-axis electron holography (EH). SiNWs were grown via the vapor-solid-liquid (VLS) mechanism using gold (Au) as the catalyst, silane (SiH$_{4}$), diborane (B$_{2}$H$_{6}$) and phosphine (PH$_{3}$) as the precursors, and hydrochloric acid (HCl) to stabilize the growth. Two types of growth were carried out, and in each case we explored growth with both $n$/$p$ and $p$/$n$ sequences. In the first type, we abruptly switched the dopant precursors at the desired junction location, and in the second type we slowed the growth rate at the junction to allow the dopants to readily leave the Au catalyst. We demonstrate degenerately-doped $p$/$n$ and $n$/$p$ nanowire segments with abrupt potential profiles of $1.02\pm0.02$ and $0.86\pm0.3$ V, and depletion region widths as narrow as $10\pm1$ nm via EH. Low temperature current-voltage measurements show an asymmetric curvature in the forward direction that resemble planar gold-doped tunnel junctions, where the tunneling current is hidden by a large excess current. The results presented herein show that the direct VLS growth of degenerately-doped axial SiNW $p$-$n$ junctions is feasible, an essential step in the fabrication of more complex SiNW-based devices for electronics and solar energy.