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Researcher profile

Corey Rae H. McRae

Corey Rae H. McRae contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
quant-phcond-mat.mtrl-sciphysics.app-phphysics.ed-ph

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Published work

5 published item(s)

preprint2026arXiv

Effective reflection mode measurement for hanger-coupled microwave resonators

Superconducting microwave resonators are used in many low-power applications, such as the study of two-level system loss in superconducting quantum devices. Fano asymmetry, characterized by a nonzero asymmetry angle $ϕ$ in the diameter correction method, results from the coupling schemes used to measure these devices, including the commonly used hanger method. $ϕ$ is an additional fitting parameter which contains no physically interesting information and can obscure device parameters of interest. The T-junction symmetry nominally present in these resonator devices provides an avenue for the elimination of Fano asymmetry using calibrated measurement. We show that the eigenvalue associated with the common mode excitation of the resonator is an effective reflection mode (ERM) which has no Fano asymmetry. Our analysis reveals the cause of Fano asymmetry as interference between common and differential modes. Practically, we obtain the ERM from a linear combination of calibrated reflection and transmission measurements. We utilize a three-dimensional aluminum cavity to experimentally demonstrate the validity and flexibility of this model. To extend the usefulness of this symmetry analysis, we apply perturbation theory to recover the ERM in a multiplexed coplanar waveguide resonator device and experimentally demonstrate quantitative agreement in the extracted $Q_i^{-1}$ between hanger mode and ERM measurements. We observe a fivefold reduction in uncertainty from the ERM compared to the standard hanger mode at the lowest measured power, $-160$ dBm delivered to the device. This method could facilitate an increase in throughput of low-power superconducting resonator measurements by up to a factor of 25, as well as allow the extraction of critical parameters from otherwise unfittable device data.

0 citations0 reviewsNo code linkedOpen access
preprint2026arXiv

Low-loss Nb on Si superconducting resonators from a dual-use spintronics deposition chamber and with acid-free post-processing

Magnetic impurities are known to degrade superconductivity. For this reason, physical vapor deposition chambers that have previously been used for magnetic materials have generally been avoided for making high-quality superconducting resonator devices. In this article, we show by example that such chambers can be used for this purpose; with Nb films sputtered in a chamber that continues to be used for magnetic materials, we demonstrate compact (\SI{3}{\micro\meter} gap) coplanar waveguide resonators with low-power internal quality factors near one million. We achieve this using a resist strip bath with no post-fabrication acid treatment, which results in performance comparable to previous strip baths with acid treatments. We also find evidence that this improved resist strip bath provides a better surface chemical template for post-fabrication hydrogen fluoride processing. These results are consistent across three Si substrate preparation methods, including a \SI{700}{\celsius} anneal. These results will inform nanofabrication for other superconducting materials and the integration of magnetic materials for hybrid systems.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Simple coplanar waveguide resonator mask targeting metal-substrate interface

This white paper presents a single-layer mask, found at https://github.com/Boulder-Cryogenic-Quantum-Testbed/simple-resonator-mask. It is designed for fabrication of superconducting microwave resonators towards 1:1 comparisons of dielectric losses from the metal-substrate interface. Finite-element electromagnetic simulations are used to determine participation ratios of the four major regions of the on-chip devices, as well as to confirm lack of crosstalk between neighboring devices and demonstrate coupling tunability over three orders of magnitude. This mask is intended as an open-source community resource for facilitating precise and accurate comparisons of materials in the single-photon, millikelvin regime.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Building a Quantum Engineering Undergraduate Program

The rapidly growing quantum information science and engineering (QISE) industry will require both quantum-aware and quantum-proficient engineers at the bachelor's level. We provide a roadmap for building a quantum engineering education program to satisfy this need. For quantum-aware engineers, we describe how to design a first quantum engineering course accessible to all STEM students. For the education and training of quantum-proficient engineers, we detail both a quantum engineering minor accessible to all STEM majors, and a quantum track directly integrated into individual engineering majors. We propose that such programs typically require only three or four newly developed courses that complement existing engineering and science classes available on most larger campuses. We describe a conceptual quantum information science course for implementation at any post-secondary institution, including community colleges and military schools. QISE presents extraordinary opportunities to work towards rectifying issues of inclusivity and equity that continue to be pervasive within engineering. We present a plan to do so and describe how quantum engineering education presents an excellent set of education research opportunities. Finally, we outline a hands-on training plan on quantum hardware, a key component of any quantum engineering program, with a variety of technologies including optics, atoms and ions, cryogenic and solid-state technologies, nanofabrication, and control and readout electronics. Our recommendations provide a flexible framework that can be tailored for academic institutions ranging from teaching and undergraduate-focused two- and four-year colleges to research-intensive universities.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique

Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/Al structures are grown by molecular beam epitaxy on III-V semiconductor substrates and bonded to silicon and sapphire. Selective etching is used to remove the III-V substrate followed by surface cleaning and superconductor regrowth, resulting in epitaxial Al/GaAs/Al tri-layers on sapphire or silicon substrates. Structures are characterized with reflection high energy electron diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, transmission electron microscopy, and X-ray diffraction. Applications of these structures to the field of quantum information processing is discussed.

0 citations0 reviewsNo code linkedOpen access