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David P. Pappas

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cond-mat.supr-con quant-ph cond-mat.mtrl-sci physics.app-ph astro-ph.IM cond-mat.mes-hall physics.atom-ph physics.ed-ph

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preprint2022arXiv

Towards merged-element transmons using silicon fins: the FinMET

A merged-element transmon (MET) device, based on silicon (Si) fins, is proposed and the first steps to form such a "FinMET" are demonstrated. This new application of fin technology capitalizes on the anisotropic etch of Si(111) relative to Si(110) to define atomically flat, high aspect ratio Si tunnel barriers with epitaxial superconductor contacts on the parallel side-wall surfaces. This process circumvents the challenges associated with the growth of low-loss insulating barriers on lattice matched superconductors. By implementing low-loss, intrinsic float-zone Si as the barrier material rather than commonly used, potentially lossy AlOx, the FinMET is expected to overcome problems with standard transmons by (1) reducing dielectric losses, (2) minimizing the formation of two-level system spectral features, (3) exhibiting greater control over barrier thickness and qubit frequency spread, especially when combined with commercial fin fabrication and atomic-layer digital etching; (4) potentially reducing the footprint by several orders of magnitude; and (5) allowing scalable fabrication. Here, as a first step to making such a device, the fabrication of Si fin capacitors on Si(110) substrates with shadow-deposited Al electrodes is demonstrated. These fin capacitors are then fabricated into lumped element resonator circuits and probed using low-temperature microwave measurements. Further thinning of silicon junctions towards the tunneling regime will enable the scalable fabrication of FinMET devices based on existing silicon technology, while simultaneously avoiding lossy amorphous dielectrics for the tunnel barriers.

preprint2021arXiv

Building a Quantum Engineering Undergraduate Program

The rapidly growing quantum information science and engineering (QISE) industry will require both quantum-aware and quantum-proficient engineers at the bachelor's level. We provide a roadmap for building a quantum engineering education program to satisfy this need. For quantum-aware engineers, we describe how to design a first quantum engineering course accessible to all STEM students. For the education and training of quantum-proficient engineers, we detail both a quantum engineering minor accessible to all STEM majors, and a quantum track directly integrated into individual engineering majors. We propose that such programs typically require only three or four newly developed courses that complement existing engineering and science classes available on most larger campuses. We describe a conceptual quantum information science course for implementation at any post-secondary institution, including community colleges and military schools. QISE presents extraordinary opportunities to work towards rectifying issues of inclusivity and equity that continue to be pervasive within engineering. We present a plan to do so and describe how quantum engineering education presents an excellent set of education research opportunities. Finally, we outline a hands-on training plan on quantum hardware, a key component of any quantum engineering program, with a variety of technologies including optics, atoms and ions, cryogenic and solid-state technologies, nanofabrication, and control and readout electronics. Our recommendations provide a flexible framework that can be tailored for academic institutions ranging from teaching and undergraduate-focused two- and four-year colleges to research-intensive universities.

preprint2021arXiv

Measurement of electric-field noise from interchangeable samples with a trapped-ion sensor

We demonstrate the use of a single trapped ion as a sensor to probe electric-field noise from interchangeable test surfaces. As proof of principle, we measure the magnitude and distance dependence of electric-field noise from two ion-trap-like samples with patterned Au electrodes. This trapped-ion sensor could be combined with other surface characterization tools to help elucidate the mechanisms that give rise to electric-field noise from ion-trap surfaces. Such noise presents a significant hurdle for performing large-scale trapped-ion quantum computations.

preprint2021arXiv

TOF-SIMS Analysis of Decoherence Sources in Nb Superconducting Resonators

Superconducting qubits have emerged as a potentially foundational platform technology for addressing complex computational problems deemed intractable with classical computing. Despite recent advances enabling multiqubit designs that exhibit coherence lifetimes on the order of hundreds of $μ$s, material quality and interfacial structures continue to curb device performance. When niobium is deployed as the superconducting material, two-level system defects in the thin film and adjacent dielectric regions introduce stochastic noise and dissipate electromagnetic energy at the cryogenic operating temperatures. In this study, we utilize time-of-flight secondary ion mass spectrometry (TOF-SIMS) to understand the role specific fabrication procedures play in introducing such dissipation mechanisms in these complex systems. We interrogated Nb thin films and transmon qubit structures fabricated by Rigetti Computing and at the National Institute of Standards and Technology through slight variations in the processing and vacuum conditions. We find that when Nb film is sputtered onto the Si substrate, oxide and silicide regions are generated at various interfaces. We also observe that impurity species such as niobium hydrides and carbides are incorporated within the niobium layer during the subsequent lithographic patterning steps. The formation of these resistive compounds likely impact the superconducting properties of the Nb thin film. Additionally, we observe the presence of halogen species distributed throughout the patterned thin films. We conclude by hypothesizing the source of such impurities in these structures in an effort to intelligently fabricate superconducting qubits and extend coherence times moving forward.

preprint2021arXiv

Universal Dephasing Noise Injection via Schrodinger Wave Autoregressive Moving Average Models

We present and validate a novel method for noise injection of arbitrary spectra in quantum circuits that can be applied to any system capable of executing arbitrary single qubit rotations, including cloud-based quantum processors. As the consequences of temporally-correlated noise on the performance of quantum algorithms are not well understood, the capability to engineer and inject such noise in quantum systems is paramount. To date, noise injection capabilities have been limited and highly platform specific, requiring low-level access to control hardware. We experimentally validate our universal method by comparing to a direct hardware-based noise-injection scheme, using a combination of quantum noise spectroscopy and classical signal analysis to show that the two approaches agree. These results showcase a highly versatile method for noise injection that can be utilized by theoretical and experimental researchers to verify, evaluate, and improve quantum characterization protocols and quantum algorithms for sensing and computing.

preprint2020arXiv

Amplitude and frequency sensing of microwave fields with a superconducting transmon qudit

Experiments with superconducting circuits require careful calibration of the applied pulses and fields over a large frequency range. This remains an ongoing challenge as commercial semiconductor electronics are not able to probe signals arriving at the chip due to its cryogenic environment. Here, we demonstrate how the on-chip amplitude and frequency of a microwave signal can be inferred from the ac Stark shifts of higher transmon levels. In our time-resolved measurements we employ Ramsey fringes, allowing us to detect the amplitude of the systems transfer function over a range of several hundreds of MHz with an energy sensitivity on the order of $10^{-4}$. Combined with similar measurements for the phase of the transfer function, our sensing method can facilitate pulse correction for high fidelity quantum gates in superconducting circuits. Additionally, the potential to characterize arbitrary microwave fields promotes applications in related areas of research, such as quantum optics or hybrid microwave systems including photonic, mechanical or magnonic subsystems.

preprint2020arXiv

Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique

Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/Al structures are grown by molecular beam epitaxy on III-V semiconductor substrates and bonded to silicon and sapphire. Selective etching is used to remove the III-V substrate followed by surface cleaning and superconductor regrowth, resulting in epitaxial Al/GaAs/Al tri-layers on sapphire or silicon substrates. Structures are characterized with reflection high energy electron diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, transmission electron microscopy, and X-ray diffraction. Applications of these structures to the field of quantum information processing is discussed.

preprint2015arXiv

Low-noise kinetic inductance traveling-wave amplifier using three-wave mixing

We have fabricated a wide-bandwidth, high dynamic range, low-noise cryogenic amplifier based on a superconducting kinetic inductance traveling-wave device. The device was made from NbTiN and consisted of a long, coplanar waveguide on a silicon chip. By adding a DC current and an RF pump tone we are able to generate parametric amplification using three-wave mixing. The devices exhibit gain of more than 15 dB across an instantaneous bandwidth from 4 to 8 GHz. The total usable gain bandwidth, including both sides of the signal-idler gain region, is more than 6 GHz. The noise referred to the input of the devices approaches the quantum limit, with less than 1 photon excess noise. Compared to similarly constructed four-wave mixing amplifiers, these devices operate with the RF pump at $\sim$20 dB lower power and at frequencies far from the signal. This will permit easier integration into large scale qubit and detector applications.

preprint2014arXiv

The Next Generation BLAST Experiment

The Balloon-borne Large Aperture Submillimeter Telescope for Polarimetry (BLASTPol) was a suborbital experiment designed to map magnetic fields in order to study their role in star formation processes. BLASTPol made detailed polarization maps of a number of molecular clouds during its successful flights from Antarctica in 2010 and 2012. We present the next-generation BLASTPol instrument (BLAST-TNG) that will build off the success of the previous experiment and continue its role as a unique instrument and a test bed for new technologies. With a 16-fold increase in mapping speed, BLAST-TNG will make larger and deeper maps. Major improvements include a 2.5 m carbon fiber mirror that is 40% wider than the BLASTPol mirror and ~3000 polarization sensitive detectors. BLAST-TNG will observe in three bands at 250, 350, and 500 microns. The telescope will serve as a pathfinder project for microwave kinetic inductance detector (MKID) technology, as applied to feedhorn coupled submillimeter detector arrays. The liquid helium cooled cryostat will have a 28-day hold time and will utilize a closed-cycle $^3$He refrigerator to cool the detector arrays to 270 mK. This will enable a detailed mapping of more targets with higher polarization resolution than any other submillimeter experiment to date. BLAST-TNG will also be the first balloon-borne telescope to offer shared risk observing time to the community. This paper outlines the motivation for the project and the instrumental design.

preprint2014arXiv

The next-generation BLASTPol experiment

The Balloon-borne Large Aperture Submillimeter Telescope for Polarimetry (BLASTPol) is a suborbital mapping experiment designed to study the role magnetic fields play in star formation. BLASTPol has had two science flights from McMurdo Station, Antarctica in 2010 and 2012. These flights have produced thousands of polarization vectors at 250, 350 and 500 microns in several molecular cloud targets. We present the design, specifications, and progress towards the next-generation BLASTPol experiment (BLAST-TNG). BLAST-TNG will fly a 40% larger diameter primary mirror, with almost 8 times the number of polarization-sensitive detectors resulting in a factor of 16 increase in mapping speed. With a spatial resolution of 22 arcseconds and four times the field of view of BLASTPol, BLAST-TNG will bridge the angular scales between Planck's low resolution all-sky maps and ALMA's ultra-high resolution narrow fields. The new receiver has a larger cryogenics volume, allowing for a 28 day hold time. BLAST-TNG employs three arrays of Microwave Kinetic Inductance Detectors (MKIDs) with 30% fractional bandwidth at 250, 350 and 500 microns. In this paper, we will present the new BLAST-TNG instrument and science objectives.

preprint2012arXiv

Characterization and In-situ Monitoring of Sub-stoichiometric Adjustable Tc Titanium Nitride Growth

The structural and electrical properties of Ti-N films deposited by reactive sputtering depend on their growth parameters, in particular the Ar:N2 gas ratio. We show that the nitrogen percentage changes the crystallographic phase of the film progressively from pure α-Ti, through an α-Ti phase with interstitial nitrogen, to stoichiometric Ti2N, and through a substoichiometric TiNX to stoichiometric TiN. These changes also affect the superconducting transition temperature, Tc, allowing, the superconducting properties to be tailored for specific applications. After decreasing from a Tc of 0.4 K for pure Ti down to below 50 mK at the Ti2N point, the Tc then increases rapidly up to nearly 5 K over a narrow range of nitrogen incorporation. This very sharp increase of Tc makes it difficult to control the properties of the film from wafer-to-wafer as well as across a given wafer to within acceptable margins for device fabrication. Here we show that the nitrogen composition and hence the superconductive properties are related to, and can be determined by, spectroscopic ellipsometry. Therefore, this technique may be used for process control and wafer screening prior to investing time in processing devices.

preprint2012arXiv

Etch Induced Microwave Losses in Titanium Nitride Superconducting Resonators

We have investigated the correlation between the microwave loss and patterning method for coplanar waveguide titanium nitride resonators fabricated on Si wafers. Three different methods were investigated: fluorine- and chlorine-based reactive ion etches and an argon-ion mill. At high microwave probe powers the reactive etched resonators showed low internal loss, whereas the ion-milled samples showed dramatically higher loss. At single-photon powers we found that the fluorine-etched resonators exhibited substantially lower loss than the chlorine-etched ones. We interpret the results by use of numerically calculated filling factors and find that the silicon surface exhibits a higher loss when chlorine-etched than when fluorine-etched. We also find from microscopy that re-deposition of silicon onto the photoresist and side walls is the probable cause for the high loss observed for the ion-milled resonators

preprint2012arXiv

Identifying capacitive and inductive loss in lumped element superconducting hybrid titanium nitride/aluminum resonators

We present a method to systematically locate and extract capacitive and inductive losses in superconducting resonators at microwave frequencies by use of mixed-material, lumped element devices. In these devices, ultra-low loss titanium nitride was progressively replaced with aluminum in the inter-digitated capacitor and meandered inductor elements. By measuring the power dependent loss at 50 mK as the Al-TiN fraction in each element is increased, we find that at low electric field, i.e. in the single photon limit, the loss is two level system in nature and is correlated with the amount of Al capacitance rather than the Al inductance. In the high electric field limit, the remaining loss is linearly related to the product of the Al area times its inductance and is likely due to quasiparticles generated by stray radiation. At elevated temperature, additional loss is correlated with the amount of Al in the inductance, with a power independent TiN-Al interface loss term that exponentially decreases as the temperature is reduced. The TiN-Al interface loss is vanishingly small at the 50 mK base temperature.

preprint2012arXiv

Long-lived, radiation-suppressed superconducting quantum bit in a planar geometry

We present a superconducting qubit design that is fabricated in a 2D geometry over a superconducting ground plane to enhance the lifetime. The qubit is coupled to a microstrip resonator for readout. The circuit is fabricated on a silicon substrate using low loss, stoichiometric titanium nitride for capacitor pads and small, shadow-evaporated aluminum/aluminum-oxide junctions. We observe qubit relaxation and coherence times ($T_1$ and $T_2$) of 11.7 $\pm$ 0.2 $μ$s and 8.7 $\pm$ 0.3 $μ$s, respectively. Calculations show that the proximity of the superconducting plane suppresses the otherwise high radiation loss of the qubit. A significant increase in $T_1$ is projected for a reduced qubit-to-superconducting plane separation.

preprint2012arXiv

Proximity-Coupled Ti/TiN Multilayers for use in Kinetic Inductance Detectors

We apply the superconducting proximity effect in TiN/Ti multi-layer films to tune the critical temperature, Tc, to within 10 mK with high uniformity (less than 15 mK spread) across a 75 mm wafer. Reproducible Tc's are obtained from 0.8 - 2.5 K. These films had high resistivities, > 100 uOhm-cm and internal quality factors for resonators in the GHz range on the order of 100k and higher. Both trilayers of TiN/Ti/TiN and thicker superlattice films were prepared, demonstrating a highly controlled process for films over a wide thickness range. Detectors were fabricated and showed single photon resolution at 1550 nm. The high uniformity and controllability coupled with the high quality factor, kinetic inductance, and inertness of TiN make these films ideal for use in frequency multiplexed kinetic inductance detectors and other potential applications such as nanowire detectors, transition edge sensors and associated quantum information applications.

preprint2011arXiv

Coherence in a transmon qubit with epitaxial tunnel junctions

We developed transmon qubits based on epitaxial tunnel junctions and interdigitated capacitors. This multileveled qubit, patterned by use of all-optical lithography, is a step towards scalable qubits with a high integration density. The relaxation time T1 is .72-.86mu sec and the ensemble dephasing time T2 is slightly larger than T1. The dephasing time T2 (1.36mu sec) is nearly energy-relaxation-limited. Qubit spectroscopy yields weaker level splitting than observed in qubits with amorphous barriers in equivalent-size junctions. The qubit's inferred microwave loss closely matches the weighted losses of the individual elements (junction, wiring dielectric, and interdigitated capacitor), determined by independent resonator measurements.

preprint2011arXiv

Sub-micrometer epitaxial Josephson junctions for quantum circuits

We present a fabrication scheme and testing results for epitaxial sub-micrometer Josephson junctions. The junctions are made using a high-temperature (1170 K) "via process" yielding junctions as small as 0.8 mu m in diameter by use of optical lithography. Sapphire (Al2O3) tunnel-barriers are grown on an epitaxial Re/Ti multilayer base-electrode. We have fabricated devices with both Re and Al top electrodes. While room-temperature (295 K) resistance versus area data are favorable for both types of top electrodes, the low-temperature (50 mK) data show that junctions with the Al top electrode have a much higher subgap resistance. The microwave loss properties of the junctions have been measured by use of superconducting Josephson junction qubits. The results show that high subgap resistance correlates to improved qubit performance.

preprint2010arXiv

Direct Observation of Coherent Population Trapping in a Superconducting Artificial Atom

The phenomenon of Coherent Population Trapping (CPT) of an atom (or solid state "artificial atom"), and the associated effect of Electromagnetically Induced Transparency (EIT), are clear demonstrations of quantum interference due to coherence in multi-level quantum systems. We report observation of CPT in a superconducting phase qubit by simultaneously driving two coherent transitions in a $Λ$-type configuration, utilizing the three lowest lying levels of a local minimum of a phase qubit. We observe $60(\pm 7)%$ suppression of excited state population under conditions of CPT resonance. We present data and matching theoretical simulations showing the development of CPT in time. Finally, we used the observed time dependence of the excited state population to characterize quantum dephasing times of the system.

preprint2010arXiv

Low Loss Superconducting Titanium Nitride Coplanar Waveguide Resonators

Thin films of TiN were sputter-deposited onto Si and sapphire wafers with and without SiN buffer layers. The films were fabricated into RF coplanar waveguide resonators, and internal quality factor measurements were taken at millikelvin temperatures in both the many photon and single photon limits, i.e. high and low power regimes, respectively. At high power, internal quality factors ($Q_i$'s) higher than $10^7$ were measured for TiN with predominantly a (200)-TiN orientation. Films that showed significant (111)-TiN texture invariably had much lower $Q_i$'s, on the order of $10^5$. Our studies show that the (200)-TiN is favored for growth at high temperature on either bare Si or SiN buffer layers. However, growth on bare sapphire or Si(100) at low temperature resulted in primarily a (111)-TiN orientation. Ellipsometry and Auger measurements indicate that the (200)-TiN growth on the bare Si substrates is correlated with the formation of a thin, $\approx 2$ nm, layer of SiN during the pre-deposition procedure. In the single photon regime, $Q_i$ of these films exceeded $8\times10^5$, while thicker SiN buffer layers led to reduced $Q_i$'s at low power.

preprint2010arXiv

Remote Sensing and Control of Phase Qubits

We demonstrate a remote sensing design of phase qubits by separating the control and readout circuits from the qubit loop. This design improves measurement reliability because the control readout chip can be fabricated using more robust materials and can be reused to test different qubit chips. Typical qubit measurements such as Rabi oscillations, spectroscopy, and excited-state energy relaxation are presented.

David P. Pappas

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20 published item(s)

Towards merged-element transmons using silicon fins: the FinMET

Building a Quantum Engineering Undergraduate Program

Measurement of electric-field noise from interchangeable samples with a trapped-ion sensor

TOF-SIMS Analysis of Decoherence Sources in Nb Superconducting Resonators

Universal Dephasing Noise Injection via Schrodinger Wave Autoregressive Moving Average Models

Amplitude and frequency sensing of microwave fields with a superconducting transmon qudit

Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique

Low-noise kinetic inductance traveling-wave amplifier using three-wave mixing

The Next Generation BLAST Experiment

The next-generation BLASTPol experiment

Characterization and In-situ Monitoring of Sub-stoichiometric Adjustable Tc Titanium Nitride Growth

Etch Induced Microwave Losses in Titanium Nitride Superconducting Resonators

Identifying capacitive and inductive loss in lumped element superconducting hybrid titanium nitride/aluminum resonators

Long-lived, radiation-suppressed superconducting quantum bit in a planar geometry

Proximity-Coupled Ti/TiN Multilayers for use in Kinetic Inductance Detectors

Coherence in a transmon qubit with epitaxial tunnel junctions

Sub-micrometer epitaxial Josephson junctions for quantum circuits

Direct Observation of Coherent Population Trapping in a Superconducting Artificial Atom

Low Loss Superconducting Titanium Nitride Coplanar Waveguide Resonators

Remote Sensing and Control of Phase Qubits