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Researcher profile

David P. Pappas

David P. Pappas contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
quant-phphysics.app-phcond-mat.mtrl-scicond-mat.mes-hallcond-mat.supr-conphysics.atom-phphysics.ed-ph

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Published work

7 published item(s)

preprint2022arXiv

Towards merged-element transmons using silicon fins: the FinMET

A merged-element transmon (MET) device, based on silicon (Si) fins, is proposed and the first steps to form such a "FinMET" are demonstrated. This new application of fin technology capitalizes on the anisotropic etch of Si(111) relative to Si(110) to define atomically flat, high aspect ratio Si tunnel barriers with epitaxial superconductor contacts on the parallel side-wall surfaces. This process circumvents the challenges associated with the growth of low-loss insulating barriers on lattice matched superconductors. By implementing low-loss, intrinsic float-zone Si as the barrier material rather than commonly used, potentially lossy AlOx, the FinMET is expected to overcome problems with standard transmons by (1) reducing dielectric losses, (2) minimizing the formation of two-level system spectral features, (3) exhibiting greater control over barrier thickness and qubit frequency spread, especially when combined with commercial fin fabrication and atomic-layer digital etching; (4) potentially reducing the footprint by several orders of magnitude; and (5) allowing scalable fabrication. Here, as a first step to making such a device, the fabrication of Si fin capacitors on Si(110) substrates with shadow-deposited Al electrodes is demonstrated. These fin capacitors are then fabricated into lumped element resonator circuits and probed using low-temperature microwave measurements. Further thinning of silicon junctions towards the tunneling regime will enable the scalable fabrication of FinMET devices based on existing silicon technology, while simultaneously avoiding lossy amorphous dielectrics for the tunnel barriers.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Building a Quantum Engineering Undergraduate Program

The rapidly growing quantum information science and engineering (QISE) industry will require both quantum-aware and quantum-proficient engineers at the bachelor's level. We provide a roadmap for building a quantum engineering education program to satisfy this need. For quantum-aware engineers, we describe how to design a first quantum engineering course accessible to all STEM students. For the education and training of quantum-proficient engineers, we detail both a quantum engineering minor accessible to all STEM majors, and a quantum track directly integrated into individual engineering majors. We propose that such programs typically require only three or four newly developed courses that complement existing engineering and science classes available on most larger campuses. We describe a conceptual quantum information science course for implementation at any post-secondary institution, including community colleges and military schools. QISE presents extraordinary opportunities to work towards rectifying issues of inclusivity and equity that continue to be pervasive within engineering. We present a plan to do so and describe how quantum engineering education presents an excellent set of education research opportunities. Finally, we outline a hands-on training plan on quantum hardware, a key component of any quantum engineering program, with a variety of technologies including optics, atoms and ions, cryogenic and solid-state technologies, nanofabrication, and control and readout electronics. Our recommendations provide a flexible framework that can be tailored for academic institutions ranging from teaching and undergraduate-focused two- and four-year colleges to research-intensive universities.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Measurement of electric-field noise from interchangeable samples with a trapped-ion sensor

We demonstrate the use of a single trapped ion as a sensor to probe electric-field noise from interchangeable test surfaces. As proof of principle, we measure the magnitude and distance dependence of electric-field noise from two ion-trap-like samples with patterned Au electrodes. This trapped-ion sensor could be combined with other surface characterization tools to help elucidate the mechanisms that give rise to electric-field noise from ion-trap surfaces. Such noise presents a significant hurdle for performing large-scale trapped-ion quantum computations.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

TOF-SIMS Analysis of Decoherence Sources in Nb Superconducting Resonators

Superconducting qubits have emerged as a potentially foundational platform technology for addressing complex computational problems deemed intractable with classical computing. Despite recent advances enabling multiqubit designs that exhibit coherence lifetimes on the order of hundreds of $μ$s, material quality and interfacial structures continue to curb device performance. When niobium is deployed as the superconducting material, two-level system defects in the thin film and adjacent dielectric regions introduce stochastic noise and dissipate electromagnetic energy at the cryogenic operating temperatures. In this study, we utilize time-of-flight secondary ion mass spectrometry (TOF-SIMS) to understand the role specific fabrication procedures play in introducing such dissipation mechanisms in these complex systems. We interrogated Nb thin films and transmon qubit structures fabricated by Rigetti Computing and at the National Institute of Standards and Technology through slight variations in the processing and vacuum conditions. We find that when Nb film is sputtered onto the Si substrate, oxide and silicide regions are generated at various interfaces. We also observe that impurity species such as niobium hydrides and carbides are incorporated within the niobium layer during the subsequent lithographic patterning steps. The formation of these resistive compounds likely impact the superconducting properties of the Nb thin film. Additionally, we observe the presence of halogen species distributed throughout the patterned thin films. We conclude by hypothesizing the source of such impurities in these structures in an effort to intelligently fabricate superconducting qubits and extend coherence times moving forward.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Universal Dephasing Noise Injection via Schrodinger Wave Autoregressive Moving Average Models

We present and validate a novel method for noise injection of arbitrary spectra in quantum circuits that can be applied to any system capable of executing arbitrary single qubit rotations, including cloud-based quantum processors. As the consequences of temporally-correlated noise on the performance of quantum algorithms are not well understood, the capability to engineer and inject such noise in quantum systems is paramount. To date, noise injection capabilities have been limited and highly platform specific, requiring low-level access to control hardware. We experimentally validate our universal method by comparing to a direct hardware-based noise-injection scheme, using a combination of quantum noise spectroscopy and classical signal analysis to show that the two approaches agree. These results showcase a highly versatile method for noise injection that can be utilized by theoretical and experimental researchers to verify, evaluate, and improve quantum characterization protocols and quantum algorithms for sensing and computing.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Amplitude and frequency sensing of microwave fields with a superconducting transmon qudit

Experiments with superconducting circuits require careful calibration of the applied pulses and fields over a large frequency range. This remains an ongoing challenge as commercial semiconductor electronics are not able to probe signals arriving at the chip due to its cryogenic environment. Here, we demonstrate how the on-chip amplitude and frequency of a microwave signal can be inferred from the ac Stark shifts of higher transmon levels. In our time-resolved measurements we employ Ramsey fringes, allowing us to detect the amplitude of the systems transfer function over a range of several hundreds of MHz with an energy sensitivity on the order of $10^{-4}$. Combined with similar measurements for the phase of the transfer function, our sensing method can facilitate pulse correction for high fidelity quantum gates in superconducting circuits. Additionally, the potential to characterize arbitrary microwave fields promotes applications in related areas of research, such as quantum optics or hybrid microwave systems including photonic, mechanical or magnonic subsystems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique

Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/Al structures are grown by molecular beam epitaxy on III-V semiconductor substrates and bonded to silicon and sapphire. Selective etching is used to remove the III-V substrate followed by surface cleaning and superconductor regrowth, resulting in epitaxial Al/GaAs/Al tri-layers on sapphire or silicon substrates. Structures are characterized with reflection high energy electron diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, transmission electron microscopy, and X-ray diffraction. Applications of these structures to the field of quantum information processing is discussed.

0 citations0 reviewsNo code linkedOpen access