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Claudia Ojeda-Aristizabal

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cond-mat.mes-hall cond-mat.str-el cond-mat.mtrl-sci

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preprint2022arXiv

Polarization dependent photoemission as a probe of the magnetic ground state in the layered ferromagnet VI3

Layered ferromagnets are thrilling materials from both a fundamental and technological point of view. VI3 is an interesting example, with a complex magnetism that differentiates it from the first reported Cr based layered ferromagnets. Here, we show in an indirect way through Angle Resolved Photoemission Spectroscopy (ARPES) experiments, the importance of spin-orbit coupling setting the electronic properties of this material. Our light polarized photoemission measurements point to a ground state with a half-filled e'_+- doublet, where a gap opening is triggered by spin-orbit coupling enhanced by electronic correlations.

preprint2020arXiv

Competition between magnetic order and charge localization in Na$_2$IrO$_3$ thin crystal devices

Spin orbit assisted Mott insulators such as sodium iridate (Na$_2$IrO$_3$) have been an important subject of study in the recent years. In these materials, the interplay of electronic correlations, spin-orbit coupling, crystal field effects and a honeycomb arrangement of ions bring exciting ground states, predicted in the frame of the Kitaev model. The insulating character of Na$_2$IrO$_3$ has hampered its integration to an electronic device, desirable for applications, such as the manipulation of quasiparticles interesting for topological quantum computing. Here we show through electronic transport measurements supported by Angle Resolved Photoemission Spectroscopy (ARPES) experiments, that electronic transport in Na$_2$IrO$_3$ is ruled by variable range hopping and it is strongly dependent on the magnetic ordering transition known for bulk Na$_2$IrO$_3$, as well as on external electric fields. Electronic transport measurements allow us to deduce a value for the localization length and the density of states in our Na$_2$IrO$_3$ thin crystals devices, offering an alternative approach to study insulating layered materials.

preprint2020arXiv

Signature of multilayer graphene strain-controlled domain walls in quantum Hall effect

Domain walls, topological defects that define the frontier between regions of different stacking in multilayer graphene, have proved to host exciting physics. The ability of tuning these topological defects in-situ in an electronic transport experiment brings a wealth of possibilities in terms of fundamental understanding of domain walls as well as for electronic applications. Here, we demonstrate through a MEMS (micro-electromechanical system) actuator and magnetoresistance measurements the effect of domain walls in multilayer graphene quantum Hall effect. Reversible and controlled uniaxial strain triggers these topological defects, manifested as new quantum Hall effect plateaus as well as a discrete and reversible modulation of the current across the device. Our findings are supported by theoretical calculations and constitute the first indication of the in-situ tuning of topological defects in multilayer graphene probed through electronic transport, opening the way to the use of reversible topological defects in electronic applications.

preprint2019arXiv

Orbital character effects in the photon energy and polarization dependence of pure C60 photoemission

Recent direct experimental observation of multiple highly-dispersive C$_{60}$ valence bands has allowed for a detailed analysis of the unique photoemission traits of these features through photon energy- and polarization-dependent measurements. Previously obscured dispersions and strong photoemission traits are now revealed by specific light polarizations. The observed intensity effects prove the locking in place of the C$_{60}$ molecules at low temperatures and the existence of an orientational order imposed by the substrate chosen. Most importantly, photon energy- and polarization-dependent effects are shown to be intimately linked with the orbital character of the C$_{60}$ band manifolds which allows for a more precise determination of the orbital character within the HOMO-2. Our observations and analysis provide important considerations for the connection between molecular and crystalline C$_{60}$ electronic structure, past and future band structure studies, and for increasingly popular C$_{60}$ electronic device applications, especially those making use of heterostructures.

preprint2016arXiv

Why do Collapsed Carbon Nanotubes Twist?

We study the collapsing and subsequent spontaneous twisting of a carbon nanotube by in-situ transmission electron microscopy. A custom-sized nanotube is first created in the microscope by selectively extracting shells from a parent multi-wall tube. The few-wall, large-diameter daughter nanotube is driven to collapse via mechanical stimulation, after which the ribbon-like collapsed tube spontaneously twists along its long axis. In-situ diffraction experiments fully characterize the uncollapsed and collapsed tubes. From the experimental observations and associated theoretical analysis, the origin of the twisting is determined to be compressive strain due to charge imbalance.

preprint2015arXiv

Characterization of collective ground states in single-layer NbSe2

Layered transition metal dichalcogenides (TMDs) are ideal systems for exploring the effects of dimensionality on correlated electronic phases such as charge density wave (CDW) order and superconductivity. In bulk NbSe2 a CDW sets in at TCDW = 33 K and superconductivity sets in at Tc = 7.2 K. Below Tc these electronic states coexist but their microscopic formation mechanisms remain controversial. Here we present an electronic characterization study of a single 2D layer of NbSe2 by means of low temperature scanning tunneling microscopy/spectroscopy (STM/STS), angle-resolved photoemission spectroscopy (ARPES), and electrical transport measurements. We demonstrate that 3x3 CDW order in NbSe2 remains intact in 2D. Superconductivity also still remains in the 2D limit, but its onset temperature is depressed to 1.9 K. Our STS measurements at 5 K reveal a CDW gap of Δ = 4 meV at the Fermi energy, which is accessible via STS due to the removal of bands crossing the Fermi level for a single layer. Our observations are consistent with the simplified (compared to bulk) electronic structure of single-layer NbSe2, thus providing new insight into CDW formation and superconductivity in this model strongly-correlated system.